ON Semiconductor has introduced a new series of insulated gate bipolar transistors (IGBTs) that use its proprietary Ultra Field Stop trench technology. The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are designed to deliver elevated levels of operational performance in order to meet the exacting demands of modern switching applications (Ets). These 1200 V devices are able to achieve total switching loss characteristics; the improvement in performance is attributable in part to a highly activated field-stop layer and optimized co-pack diode.
The NGTB40N120FL3WG has an Ets of 2.7 mJ, while the NGTB25N120FL3WG has an Ets of 1.7 mJ. Both devices have a VCEsat of 1.7 V at their respective rated currents. The NGTB40N120L3WG is optimized for low conduction losses and has a VCEsat of 1.55 V, at rated current, with an Ets of 3 mJ. The new Ultra Field Stop products are co-packaged with a fast recovery diode that has soft turn-off characteristics and still offers minimal reverse recovery losses. The NGTB25N120FL3WG and NGTB40N120FL3WG are highly suitable for use in uninterruptible power supplies and solar inverters, whereas the NGTB40N120L3WG is mainly targeted at use in motor drives.
Packaging and Pricing
The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are all supplied in RoHS-compliant TO−247 packages and respectively priced at $2.02, $1.76, and $2.12 per unit in 10,000 unit quantities.
ON Semiconductor
www.onsemi.com
Leave a Reply
You must be logged in to post a comment.