The EPC2052 is a 100-V GaN transistor with a maximum RDS(on) of 13.5 mΩ and a 74-A pulsed output current for high-efficiency power conversion in a tiny 2.25-mm2 footprint. Applications demanding higher efficiency and power density no longer have to choose between size and performance. The EPC2052 measures just 1.50×1.50 mm (2.25 mm2). Despite the small footprint, operating in a 48–12-V buck converter, the EPC2052 achieves greater than 97% efficiency at a 10-A output while switching at 500 kHz and greater than 96% at a 10-A output while switching at 1 MHz enabling significant system size reductions. In addition, the low cost of the EPC2052 brings the performance of GaN FETs at a price comparable to silicon MOSFETs.
Applications benefiting from this performance, small size, and low cost include 48-V-input power converters for computing and telecom systems, LiDAR, LED Lighting, and Class-D audio.
“The ability of eGaN based power devices to operate efficiently at high frequency widens the performance and cost gap with silicon. The 100-V, EPC2052, is significantly smaller than the closest silicon MOSFET and the high-frequency operation allows even further space savings opportunities to designers,” said Alex Lidow, EPC CEO.
The EPC9092 development board is a 100-V maximum device voltage, half-bridge featuring the EPC2052 and the LMG1205 gate driver from Texas Instruments. This 2×2-in (50.8×50.8-mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the 100-V EPC2052 eGaN FET.
The EPC2052 eGaN FET is priced for 1K units at $0.68 each and $0.54 in 100K volumes and the
EPC9092 development board is priced at $118.75 each. Both products are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
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