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1200 V/300 A IGBT module supports efficient industrial power conversion

January 26, 2026 By Aimee Kalnoskas Leave a Comment

CISSOID’s new CMT-PLA1BL12300MA half-bridge IGBT power module integrates Trench Gate Field Stop (TG-FS) IGBT technology in a CPAK-EDC package to support 1200 V blocking and 300 A nominal current with continuous DC capability up to 450 A at 90 °C, low saturation voltage (approximately 1.56 V at 300 A, 25 °C), and reduced switching losses (Eon ≈ 34 mJ, Eoff ≈ 34.5 mJ at 150 °C); the module includes a freewheeling diode optimized for soft reverse recovery and is specified from -40 °C to +175 °C junction temperature, enabling compact, high-frequency power conversion designs with enhanced mechanical robustness, drop-in compatibility, and simplified system integration for UPS, motor control, and industrial power supplies.

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Filed Under: Applications, Industrial, Transistors Tagged With: Cissoid Semiconductor, IGBT

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