Navitas Semiconductor has released sample units of its new 3300 V and 2300 V ultra-high-voltage silicon carbide (SiC) MOSFETs, available in power-module formats, discrete packages, and known-good-die (KGD) options. The devices are based on the fourth-generation GeneSiC platform using a Trench-Assisted Planar (TAP) structure that improves electric-field distribution compared to conventional trench or planar MOSFETs. The TAP approach reduces voltage stress across the device and supports higher blocking capability and avalanche robustness for long-term operation.
The MOSFET architecture includes an optimized source design that increases cell-pitch density and improves current spreading. These characteristics contribute to lower on-resistance at elevated temperatures and improved switching figures of merit, supporting high-frequency operation in demanding power-conversion applications.
Navitas has expanded the product family with multiple packaging choices to meet system-level requirements. For high-power modules, the devices are available in SiCPAK G+ packages in half-bridge and full-bridge configurations. The module platform uses an epoxy-resin potting compound that demonstrates significantly improved thermal-shock and power-cycling performance compared with silicone-gel–based designs. An AlN DBC substrate supports heat transfer, and high-current press-fit pins increase current-carrying capability per pin. Discrete variants are offered in TO-247 and TO-263-7 industry-standard packages.
To validate durability in grid, energy-storage, and industrial environments, Navitas has established an AEC-Plus qualification benchmark that extends beyond AEC-Q101 and JEDEC requirements. Additional testing covers dynamic reverse-bias and gate-switching stress, extended high-temperature high-voltage tests, HV-THB for modules, HV-H3TRB for discrete and KGD devices, and longer cycling sequences. The KGD version undergoes screening on a singulated die at room and elevated temperatures, along with six-sided optical inspection to maintain consistency for custom module manufacturers.
The 3300 V and 2300 V SiC MOSFETs are intended for traction inverters, solid-state transformers, utility-scale battery storage, renewable-energy systems, and other high-voltage platforms where switching efficiency and thermal stability determine system performance. Documentation, module information, and die-level resources are available on the company’s website.
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