650V bidirectional GaN hits 97.5% in solar microinverter design

The TP65B110HRU bidirectional GaN switch from Renesas Electronics Corporation is a depletion-mode GaN power device designed for single-stage solar microinverters, AI data centers and onboard electric vehicle chargers. Rated for ±650V continuous AC and DC operation with ±800V transient capability, the device combines a high-voltage bidirectional GaN chip with two low-voltage silicon MOSFETs, offers 110 mΩ typical R_SS,ON at 25°C, 3V typical Vgs(th), >100 V/ns dv/dt immunity and does not require negative gate drive. The switch is intended to replace back-to-back FET configurations with a single device, helping reduce switch count, simplify converter topologies and support higher efficiency and power density in applications that require bidirectional blocking and fast switching.