Navitas has introduced a new 5th-generation silicon carbide MOSFET technology platform for 1200 V power conversion designs. The trench-assisted planar structure is designed to improve switching and conduction performance compared to the prior 1200 V generation. Applications include AI data centers, grid and energy infrastructure, and industrial electrification.
Reported performance changes include a 35% improvement in the RDS(on) × QGD figure of merit and an approximately 25% improvement in the QGD/QGS ratio. The technology specifies a threshold voltage of VGS,TH ≥ 3 V to reduce susceptibility to parasitic turn-on. Additional design elements include an optimized RDS(on) × EOSS characteristic and integrated soft body-diode behavior to support switching stability.
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