Magnachip Semiconductor Corporation announced that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs) consisting of nine distinct products featuring proprietary design technology.

Magnachip’s proprietary design provides a specific on-resistance (R_SP) reduction of about 10%, and this result was achieved while maintaining the same cell pitches of previous generation MOSFETs.

In addition, the new product family of 600V SJ MOSFETs is equipped with a fast recovery body diode. This diode technology significantly enhances system efficiency with reduced reverse recovery time (t_rr) and switching loss. Therefore, the figure of merit to evaluate the general performance of MOSFETs was improved by more than 10% compared to the previous generation. As such, these 600V SJ MOSFETs can be used widely in industrial applications, such as solar inverters, energy storage systems, uninterruptible power supply systems, and a variety of electronics.

Among these new MOSFETs, the MMQ60R044RFTH product offers an exceptionally low R_DS(on) of 44mΩ, making it an optimal choice for electric vehicle chargers and servers. Omdia, a global market research firm, estimates that the compound annual growth rates of Si MOSFET markets for hybrid & electric vehicles and servers will be 11% and 7%, respectively, from 2023 to 2026.