• Skip to primary navigation
  • Skip to main content
  • Skip to primary sidebar
  • Skip to footer

Power Electronic Tips

Power Electronic News, Editorial, Video and Resources

  • Products
    • Power Supplies
    • AC-DC
    • DC-DC
    • MOSFETS
    • Power Management
    • Battery Management
    • RF Power
    • Resistors
    • Capacitors
    • Magnetics
    • Transformers
  • Applications
    • LED Lighting
    • Rack Mount
    • Wireless
  • EE Forums
    • EDABoard.com
    • Electro-Tech-Online.com
  • EE Learning Center
    • Design Guides
      • WiFi & the IOT Design Guide
      • Microcontrollers Design Guide
      • State of the Art Inductors Design Guide
  • Video
    • EE Videos
    • TI Power Videos
    • Teardown Videos
  • Resources
    • Design Fast
    • eBooks / Tech Tips
    • FAQ
    • LEAP Awards
    • Podcasts
    • Webinars
    • White Papers

650 V automotive GaN FETs integrate 2.2. MHz gate driver, reduce onboard charger size

November 9, 2020 By Aimee Kalnoskas Leave a Comment

Vehicle electrification is transforming the automotive industry, and consumers are increasingly demanding vehicles that can charge faster and drive farther. As a result, engineers are being challenged to design compact, lightweight automotive systems without compromising vehicle performance. Texas Instruments’ new LMG3522R030-Q1 and LMG3525R030-Q1 650-V automotive GaN FETs for automotive and industrial applications are designed to help reduce the size of electric vehicle (EV) onboard chargers and DC/DC converters.  Engineers can expect to achieve extended battery range, increased system reliability and lower design cost. In industrial designs, the new devices enable high efficiency and power density in AC/DC power-delivery applications where low losses and reduced board space are important – such as hyperscale and enterprise computing platforms as well as 5G telecom rectifiers.

With a fast-switching, 2.2-MHz integrated gate driver, the new families of GaN FETs help engineers deliver twice the power density, achieve 99 percent efficiency and reduce the size of power magnetics by 59 percent compared to existing solutions. TI developed these new FETs using its proprietary GaN materials and processing capabilities on a GaN-on-silicon (Si) substrate, providing a cost and supply-chain advantage over comparable substrate materials such as silicon carbide (SiC).

In high-voltage, high-density applications, minimizing board space is an important design consideration. As electronic systems are getting smaller, the components inside them must also get smaller and sit closer together. TI’s new GaN FETs integrate a fast-switching driver, plus internal protection and temperature sensing, enabling engineers to achieve high performance while reducing board space for their power management designs. This integration, plus the high power density of TI’s GaN technology, enables engineers to eliminate more than 10 components typically required for discrete solutions. Additionally, each of the new 30-mΩ FETs can support up to 4 kW of power conversion when applied in a half-bridge configuration.

GaN offers the advantage of fast switching, which enables smaller, lighter and more efficient power systems. Historically, the trade-off with gaining fast switching capability is higher power losses. To avoid this trade-off, the new GaN FETs feature TI’s ideal diode mode to reduce power losses. For example, in PFCs, ideal diode mode reduces third-quadrant losses by up to 66% compared to discrete GaN and SiC metal oxide silicon FETs (MOSFETs). Ideal diode mode also eliminates the need for adaptive dead-time control, reducing firmware complexity and development time. Read the application note, “Maximizing the Performance of GaN with Ideal Diode Mode,” to learn more.

 Offering 23 percent lower thermal impedance than the nearest competitive packaging, the TI GaN FET packaging allows engineers to use smaller heat sinks while simplifying thermal designs. The new devices provide maximum thermal design flexibility, no matter the application, with the ability to choose from either a bottom- or top-side-cooled package. In addition, the FETs’ integrated digital temperature reporting enables active power management, allowing engineers to optimize system thermal performance under varying loads and operating conditions.

Pre-production versions of the four new industrial-grade, 600-V GaN FETs are available now, only on TI.com, in a 12-mm-by-12-mm, quad flat no-lead (QFN) package with pricing listed in the table below. TI expects the industrial devices to ship in volume production in the first quarter of 2021. Evaluation modules are available for purchase on TI.com starting at US$199. Multiple payment, line-of-credit and fast, reliable shipping options are available on TI.com.

Pre-production versions of the new LMG3522R030-Q1 and LMG3525R030-Q1 650-V automotive GaN FETs and evaluation modules are expected to be available for purchase on TI.com in the first quarter of 2021. Engineering samples are available upon request at www.ti.com/autogan.

 

You may also like:

  • GaN power devices
    GaN power devices, Part 2: Application
  • GaN power devices
    GaN power devices, Part 1: Principles

  • Connected vehicles will make their connections through gallium nitride
  • wireless charging
    Wireless charging, Part 2: Implementation

Filed Under: Power Components, Semiconductor, Transistors Tagged With: texasinstrumentsinc

Reader Interactions

Leave a Reply

Your email address will not be published. Required fields are marked *

This site uses Akismet to reduce spam. Learn how your comment data is processed.

Primary Sidebar

CURRENT DIGITAL ISSUE

A frequency you can count on There are few constants in life, but what few there are might include death, taxes, and a U.S. grid frequency that doesn’t vary by more than ±0.5 Hz. However, the certainty of the grid frequency is coming into question, thanks to the rising percentage of renewable energy sources that…

More from the digital archive

DesignFast

Component Selection Made Simple.

Try it Today
design fast globle

Subscribe to our Newsletter

The Power Electronic eNewsletter delivers breaking electronic and power component news, resources, product innovations and more.

Subscribe today

EE TRAINING CENTER CLASSROOMS

EE Classrooms

RSS Current EDABoard.com discussions

  • Using LTspice to check Current sense transformer reset?
  • Plotting E_theta and E_phi using the fields calculator in HFSS
  • SRF04 module measure distance
  • Motherboard - worst case scenario
  • Will Wifi throughput be affected by RSSI (attenuation) in my setup?

RSS Current Electro-Tech-Online.com Discussions

  • Are Cross-wind compensation and Road crown compensation functions inputs to LKA function?
  • Interfacing ZMOD4410 with Arduino UNO
  • Help diagnosing a coffee maker PCB
  • Capacitor to eliminate speaker hum
  • Identify a circuit.

Footer

EE World Online Network

  • DesignFast
  • EE World Online
  • EDA Board Forums
  • Electro Tech Online Forums
  • Connector Tips
  • Microcontroller Tips
  • Analog IC Tips
  • Sensor Tips
  • Test and Measurement Tips
  • Wire and Cable Tips
  • 5G Technology World

Power Electronic Tips

  • Subscribe to our newsletter
  • Advertise with us
  • Contact us
  • About us
Follow us on TwitterAdd us on FacebookFollow us on YouTube Follow us on Instagram

Copyright © 2022 · WTWH Media LLC and its licensors. All rights reserved.
The material on this site may not be reproduced, distributed, transmitted, cached or otherwise used, except with the prior written permission of WTWH Media.

Privacy Policy