Nexperia announced the volume availability of its second-generation 650 V power GaN FET device family, offering significant performance advantages over previous technologies and competitive devices. With RDS(on) performance down to 35 m§Ł (typical), the new power GaN FETs target single-phase AC/DC and DC/DC industrial switched-mode power supplies (SMPS), ranging from 2 kW to 10 kW, especially server and telecoms supplies that must meet 80 PLUS¢ē Titanium efficiency regulations. The devices are also an excellent fit for solar inverters and servo drives in the same power range.
Available in TO-247 packaging, the new 650V H2 power GaN FETs deliver a 36% shrinkage in die size for a given RDS(on) value, for better stability and efficiency. The cascade configuration eliminates the need for complicated drivers, speeding time to market. The devices deliver outstanding performance in both hard-switching and soft-switching configurations, offering designers maximum flexibility.