The 10 kW DC-DC power platform from Navitas Semiconductor is an all-GaN design using GaNFast™ 650 V and 100 V FETs in a three-level half-bridge with synchronous rectification, delivering 98.5% peak efficiency and 98.1% full-load efficiency at up to 1 MHz switching frequency. Housed in a 61 × 116 × 11 mm full-brick package, the converter achieves 2.1 kW/in³ power density and supports 800 V–to–50 V and ±400 V–to–50 V architectures for HVDC AI data center systems. The platform integrates auxiliary power and control to support high-density DC distribution in next-generation AI infrastructure.
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