Littelfuse, Inc. announced the release of the IX4352NEAU automotive-qualified low-side gate driver designed to meet the growing demands of SiC MOSFET and IGBT control in electric vehicle (EV) powertrain and DC-DC converter applications. (View the video.)
The IX4352NEAU is the first AEC-Q100-qualified low-side gate driver to offer an integrated and adjustable negative gate drive bias, eliminating the need for an external negative voltage rail or the costly DC-DC converters typically required to suppress parasitic turn-on of high-speed power devices. This unique capability simplifies gate driver design, improves switching performance, and reduces total system cost.
Features and Benefits include: Adjustable negative gate drive bias (down to −10 V): Improves dv/dt immunity, suppresses parasitic turn-on, and ensures faster turn-off of SiC MOSFETs and IGBTs. 9 A peak source and sink drive capability (separate pins): Enables tailored turn-on and turn-off timing to optimize efficiency and reduce switching losses. Integrated protections: DESAT detection, active soft shutdown, UVLO, TSD, and fault output: Enhances system reliability and protects valuable power switches during fault conditions. 3.3 V TTL/CMOS-compatible inputs: Tolerant up to 7 V, allowing easy interfacing with most control logic. AEC-Q100 qualified and thermally robust: Ensures consistent performance across a wide temperature range, with improved thermal threshold accuracy and charge pump operation maintained during thermal shutdown.
Compared to conventional low-side gate drivers, the IX4352NEAU increases power density, reduces component count, and provides a safer overcurrent turn-off transition. Its built-in charge pump regulator with adjustable negative bias is a market first, offering automotive designers a fully integrated solution to overcome parasitic turn-on and improve switching behavior in SiC- and IGBT-based systems.
The IX4352NEAU is an automotive-grade extension of the proven commercial-grade IX4352NE, optimized to meet the strict reliability and performance demands of automotive environments.
The IX4352NEAU is the first AEC-Q100-qualified low-side gate driver with an integrated, adjustable negative gate bias down to −10 V. This eliminates the need for an external negative voltage supply, thereby reducing component count and system cost. It’s designed specifically to drive SiC MOSFETs and high-power IGBTs, with separate 9 A peak source and sink outputs for tailored switching performance. It’s ideal for fast-switching applications in EVs and other automotive systems. The IX4352NEAU includes DESAT detection, active soft shutdown, thermal shutdown, and undervoltage lockout (UVLO). These features safeguard both the gate driver and the power transistors in the event of overcurrent or other fault conditions. The IX4352NEAU helps EV designers achieve higher power density and switching efficiency in systems like traction inverters and DC-DC converters. Its automotive qualification, integrated negative gate bias, and robust protection features simplify design, enhance reliability, and reduce the need for additional components—making it ideal for demanding EV powertrain environments.
The IX4352NEAU is available in a 16-pin narrow package in tape and reel format (2,000/reel). Sample requests can be submitted through authorized Littelfuse distributors worldwide.
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