Littelfuse, Inc. announced the latest release of the 150520 Series Inline Fuse Holders product line. The latest 150520 Series Inline Fuse Holders are rated 600 VAC/VDC voltage at 20 amps in a 5×20 mm size. These convenient inline fuses are ideal for applications requiring supplemental circuit protection, including data centers, industrial HVAC, and power supplies. […]
Data center
GaN FET simulation model now available for normally-off GaN platform
Transphorm, Inc. announced the availability of its 1200 V FET simulation model and preliminary datasheet. The TP120H070WS FET is the only 1200 V GaN-on-Sapphire power semiconductor introduced to date, making its model the first of its kind. Its release indicates Transphorm’s ability to support future automotive power systems as well as three-phase power systems typically […]
Resettable switches protect circuits from excessive current
Littelfuse, Inc. announced the release of the 3425L Series SMD resettable PPTCs (Polymeric Positive Temperature Coefficient) overcurrent circuit protection devices. The latest 3425L Series SMD PPTCs is an extension of the Littelfuse PolySwitch family of resettable overcurrent protection devices, which provides resettable, high-voltage overcurrent protection in a compact, surface-mounted 8763 mm (3425 mils) size. The […]
AC-DC front-end power supply converts up to 277 V AC into 42 – 58 V DC
Bel Fuse Inc announces the expansion of its portfolio to include the TET3600-48-104RA, a 3.6 kW Titanium efficient AC-DC front-end power supply that can convert up to 277 VAC into a main adjustable (42-58 VDC) output for powering high-performance Datacenter, Network, Industrial and Broadcast applications. The TET3600 delivers a power density of 56 W/in3 and […]
650 V SiC diodes operate at 650 and 1200 V
Nexperia introduced a 650 V Silicon Carbide (SiC) Schottky diode designed for power applications that require ultra-high performance, low loss, and high efficiency. The 10 A, 650 V SiC Schottky diode is an industrial-grade part that addresses the challenges of demanding high voltage and high current applications. These include switched-mode power supplies, AC-DC and DC-DC […]
Silicon carbide MOSFET operates to 1200 V, 37 A
Diodes Incorporated introduces the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel SiC MOSFET. This device addresses the demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC-DC converters, and electric vehicle (EV) battery chargers. The […]
Shielded power bead inductors feature high current ratings, low dc resistance
Bourns, Inc. introduced five new shielded power bead inductor series that features high-rated current, ferrite-based shielded construction, and extremely low DC resistance from 72 to 440 nH. Bourns designed the new Model SPB0705, SPB1005, SPB1007, SPB1012, and SPB1308 series to match the enhanced efficiency, low magnetic field radiation, and reduced power loss requirements in a broad variety of multi-phase integration […]
Electronic fuse ICs provide protection, sensing, and control features
Littelfuse, Inc. announced the new eFuse Protection ICs product line, a series of four versatile circuit protection devices. The eFuse Protection ICs utilize an innovative design that provides a wide range of power inputs (3.3V to 28V) and integrated protection. In addition to overvoltage protection, these electronic fuses protect against overcurrent, short circuit, inrush current, […]
POL buck regulators optimized for Intel/AMD server CPUs
Infineon Technologies AG introduced a new family of OptiMOS 5 IPOL buck regulators with VR14-compliant SVID standard and I²C/PMBus digital interfaces for Intel/AMD server CPUs and network ASICs/FPGAs. Housed in a 5 x 6 mm² PQFN package, these devices are an easy-to-use, fully integrated, and highly efficient solution for next-generation server, storage, telecom, and datacom […]
GaN half-bridge power ICs enable megahertz-range switching frequencies
Navitas Semiconductor announced the industry’s first GaNSense half-bridge power ICs. These half-bridge ICs enable a new level of MHz switching frequencies while dramatically reducing the system cost and complexity compared to existing discrete solutions. GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation, to create a fundamental […]
