Navitas Semiconductor has announced its latest 12 kW power supply unit (PSU), designed for production, reference design for hyperscale AI data centers with high-power rack densities of 120 kW. The 12 kW PSU complies with Open Rack v3 (ORv3) specifications and Open Compute Project (OCP) guidelines. It utilizes Gen-3 Fast SiC MOSFETs, a novel ‘IntelliWeave’ digital platform, and high-power […]
Data center
GaN switch delivers bidirectional voltage blocking in single device
Infineon Technologies AG is introducing the CoolGaN bidirectional switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions. Featuring a common-drain design and a double-gate structure, it leverages Infineon’s robust gate injection transistor (GIT) technology to deliver a monolithic bidirectional switch, enabled by Infineon’s CoolGaN […]
Redundant power supplies deliver 59% increase in power density at 51 W/inch³
Delta has introduced a 5,500-W redundant power supply unit designed for AI data centers. It supports both 19-inch (1RU) and ORv3 21-inch (1OU) rack configurations. This unit recently received the new 80 PLUS® Ruby certification, a standard introduced in January 2025 that sets the most stringent energy efficiency criteria currently applied to internal power supply […]
Silicon carbide JFETs feature 2.3 mΩ resistance for 1200 V applications
Infineon Technologies AG is expanding its silicon carbide (SiC) portfolio with the new CoolSiC JFET product family. The new devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them ideal for advanced solid-state protection and distribution. With robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC JFETs enable […]
SiC MOSFETs feature 6.45 mm creepage in HV-T2Pak package for 1200 V applications
Navitas Semiconductor introduces a new level of reliability to meet the system lifetime requirements of the most demanding automotive and industrial applications. Navitas’ latest generation of 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2Pak top-side cooled package, delivers the industry’s highest creepage of 6.45 mm to meet IEC-compliance for applications […]
GaN power module reduces thermal resistance through .XT technology
Infineon Technologies AG is introducing the EasyPACK CoolGaN Transistor 650 V module, adding to its growing GaN power portfolio. Based on the Easy Power Module platform, the module has been specifically developed for high-power applications such as data centers, renewable energy systems, and DC electric vehicle charging stations. It is designed to meet the growing […]
MOSFET meets 48V telecom/datacenter hot-swap requirements
Alpha and Omega Semiconductor Limited announced its AOTL66935 utilizes AOS’ 100V AlphaSGT proprietary MOSFET technology, which combines the advantages of trench technology for low on-resistance with high safe operating area (SOA) capability that meets 48V hot swap requirements in AI server and telecom applications. The AOTL66935 hot swap MOSFET prevents damage to the system by limiting […]
4A – 12A SiC diode series features 20 µA max reverse leakage current
Diodes Incorporated announces the expansion of its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Rated at 4A, 6A, 8A, 10A, and 12A, the DSCxxA065LP series is housed in the ultra-thermally efficient T-DFN8080-4 package and is designed for high-efficiency power switching applications, such as DC […]
Compact 8 mm × 8 mm PMIC suppors dynamic voltage adjustment in 12.5 mV increments
Microchip Technology announces the MCP16701, a Power Management Integrated Circuit (PMIC) designed to meet the needs of high-performance MPU and FPGA designers. The MCP16701 integrates eight 1.5A buck converters that can be paralleled, four 300 mA internal Low Dropout Voltage Regulators (LDOs), and a controller to drive external MOSFETs. This highly integrated device can result in a […]
Tiny, quad-phase power modules for vertical power delivery
Infineon Technologies AG launched the next generation of high-density power modules which play a pivotal role in enabling AI and high-performance computing. Through enhanced system performance and with Infineon’s trademark robustness, the new OptiMOS TDM2454xx quad-phase power modules enable best-in-class power density and total cost-of-ownership (TCO) for AI data center operators. The OptiMOS TDM2454xx quad-phase […]
