Nexperia introduced the industry’s first ESD diodes designed to protect 48 V automotive data communications networks against the destructive effects of electrostatic discharge (ESD) events. This new portfolio of six robust AEC-Q101 qualified devices covers the required higher reverse working maximum voltage (VRWM) for increasingly common 48 V board nets. This ultimately saves PCB space and […]
Data center
APEC 2026 calls for professional education seminar proposals with August 29, 2025 submission deadline
The Organizing Committee of APEC 2026, to be held in San Antonio, Texas, March 22-26, 2026, has sent out a call to qualified experts to present a Professional Education Seminar during next year’s conference. Addressing issues of immediate and long-term interest to the practicing power electronics engineer, these seminars provide experts and professionals with a […]
PIVR technology provides sub-1V regulation with real-time dynamic voltage scaling for AI infrastructure
Marvell Technology, Inc. announced its Package Integrated Voltage Regulator (PIVR) power solutions, transforming power delivery systems and enabling hyperscalers to enhance the performance, efficiency, and return on investment (ROI) of AI and cloud infrastructure. The pre-validated power solutions effectively allow system designers to accelerate the shift from today’s board-level power delivery systems—discrete subsystems made […]
Single component replaces multiple inductors in power-over-coaxial filter designs
TDK Corporation launches the ADL8030VA, an inductor designed for power-over-coaxial (PoC) applications. Due to its impedance characteristics over a wide frequency range, this component streamlines PoC filter design by requiring only one component instead of the conventional approach with two or more inductors. This reduces complexity and cost in driver-assistance systems (ADAS) and other automotive […]
EMIS releases three phase EMI filter rated for 520 VAC and 600 A current handling
EMIS announces the availability of the TMF4233 Three Phase EMI Filter with Neutral designed to be used in systems where noise may arise not just from phase wires but also from the neutral line, improving overall noise suppression. This series is primarily used in industrial equipment, machinery, machine tools, and various process automation systems with […]
Source-down packaging improves power MOSFET thermal performance
Alpha and Omega Semiconductor Limited introduced its AONK40202 25V MOSFET in state-of-the-art DFN3.3×3.3 Source-Down packaging technology. Designed for high power density in DC-DC applications, the AONK40202 provides features that meet the requirements of AI servers and data center power distribution. In particular, its Source-Down packaging technology offers a larger source contact to the PCB, and its […]
Data center PSU integrates Gen-3 SiC MOSFETs with 3-phase interleaved topology
Navitas Semiconductor has announced its latest 12 kW power supply unit (PSU), designed for production, reference design for hyperscale AI data centers with high-power rack densities of 120 kW. The 12 kW PSU complies with Open Rack v3 (ORv3) specifications and Open Compute Project (OCP) guidelines. It utilizes Gen-3 Fast SiC MOSFETs, a novel ‘IntelliWeave’ digital platform, and high-power […]
GaN switch delivers bidirectional voltage blocking in single device
Infineon Technologies AG is introducing the CoolGaN bidirectional switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions. Featuring a common-drain design and a double-gate structure, it leverages Infineon’s robust gate injection transistor (GIT) technology to deliver a monolithic bidirectional switch, enabled by Infineon’s CoolGaN […]
Redundant power supplies deliver 59% increase in power density at 51 W/inch³
Delta has introduced a 5,500-W redundant power supply unit designed for AI data centers. It supports both 19-inch (1RU) and ORv3 21-inch (1OU) rack configurations. This unit recently received the new 80 PLUS® Ruby certification, a standard introduced in January 2025 that sets the most stringent energy efficiency criteria currently applied to internal power supply […]
Silicon carbide JFETs feature 2.3 mΩ resistance for 1200 V applications
Infineon Technologies AG is expanding its silicon carbide (SiC) portfolio with the new CoolSiC JFET product family. The new devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them ideal for advanced solid-state protection and distribution. With robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC JFETs enable […]
