Diodes Incorporated has introduced its first automotive-compliant, dual-channel, high-side power switches—the ZXMS82090S14PQ, ZXMS82120S14PQ, and ZXMS82180S14PQ—as an expansion of its IntelliFET self-protected MOSFET portfolio. These intelligent switches deliver high power within a compact footprint while also providing robust protection and diagnostic capabilities. The series is designed for driving 12V automotive loads, such as LEDs, bulbs, actuators, and motors […]
Automotive
Reed relays now offered in 5kV stand-off, up two 1.5kV switching version
Pickering Electronics has added a 5kV stand-off, up to 1.5kV switching version to its single-in-line Series 104 reed relay family. Previously, to achieve a 5kV stand-off rating, a larger, non-SIP (Single-in-Line-Package) relay was required. Four of the new 104 5D parts can fit the same PCB area that one larger style occupied, even with sufficient […]
1200 V SiC power MOSFETs now amiable in half-bridge packages
SemiQ Inc. has expanded its QSiC power modules portfolio with the introduction of a new series of 1200V silicon-carbide (SiC) power MOSFETs in half-bridge packages. Engineered and tested to operate reliably in demanding environments, these new compact, high-performance modules enable high-power-density implementations while minimizing dynamic and static losses. Featuring high breakdown voltage (>1400V), the new […]
Capacitor series now available in leaded and stacked format
Quantic UTC’s MegaCap Type (BC Series) technology is now available in a leaded and stacked format, delivering capacitance performance typically associated with much larger footprints. The leaded configuration reduces strain on the part in stressful mechanical and thermal environments. Its rugged configuration, coupled with high capacitance values and available voltages to 1000V, makes this an […]
Three eval boards feature pulse current laser drivers of 70, 125, and 231
EPC introduces three evaluation boards – EPC9179, EPC9181, and EPC9180 – featuring pulse current laser drivers of 75 A, 125 A, and 231 A, showcasing EPC’s AEC-Q101 GaN FETs. These FETs; EPC2252, EPC2204A, and EPC2218A are 30% smaller and more cost-effective than their predecessors. Designed for both long and short-range automotive lidar systems, these boards […]
Multipurpose, high-performance LDO boasts wide voltage range from 4.5 to 40V
HMI announced the launch of its HL8743, an AEC-Q100 Grade 1 qualified automotive single and dual-channel high PSRR LDO with current sensing. The HL8743 features a high-input voltage, single and dual low-dropout regulator, both equipped with precise current sensing, and capabilities designed to operate with a wide input voltage range from 4.5V to 40V. With […]
PIMs now available for power conversion stages in DC fast charging and ESS applications
Today onsemi announced the availability of nine new EliteSiC Power Integrated Modules (PIMs) enabling bidirectional charging capabilities for DC ultra-fast electric vehicle (EV) chargers and energy storage systems (ESS). The silicon carbide-based solutions will dramatically improve system cost with higher efficiency and simpler cooling mechanisms that can reduce size by up to 40% and weight […]
Two-channel gate drivers incorporates SOI technology for robustness and negative transient immunity
Infineon Technologies AG announced the expansion of its MOTIX family of products for automotive and industrial motor control applications. To further expand the advanced product family, Infineon introduces the 2-channel MOTIX gate driver ICs 2ED2742S01G, 2ED2732S01G, 2ED2748S01G, and 2ED2738S01G. The 160 V Silicon-on-Insulator (SOI) gate drivers are small, powerful, and cost-effective gate drive solutions with excellent latch-up immunity. […]
Power modules now available with press-fit terminals
Microchip Technology announces its expansive portfolio of SP1F and SP3F power modules are now available with Press-Fit terminals for high-volume applications. Solder-free Press-Fit power module terminals allow for automated or robotic installation, which simplifies and speeds up the assembly process to reduce manufacturing costs. The high accuracy of the terminal locations and the novel Press-Fit pin design […]
12 V SiC MOSFETs boast RDS(on) values of 40 Ω and 80 Ω
Nexperia announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ. NSF040120L3A0 and NSF080120L3A0 are the first in a series of planned releases that will see Nexperia’s SiC MOSFET portfolio quickly expand to include devices with […]