e-peas has introduced the AEM15820, an energy-harvesting power-management IC designed to interface with hybrid photovoltaic cells that operate across both indoor and outdoor lighting conditions. Hybrid PV sources can produce very low power under indoor illumination and scale to much higher levels in direct sunlight, creating a wide operating range that requires efficient conversion and […]
Development Tools
Radiation-hardened diodes qualified to 60 MeV·cm²/mg burnout
STMicroelectronics has introduced three radiation-hardened low-voltage rectifier diodes intended for power conversion and protection circuits used in Low Earth Orbit satellites. The LEO1N58xx devices are supplied in SOD128 plastic packages and are positioned for use in switched-mode power supplies and high-frequency DC-DC converter stages where low forward drop and fast recovery support efficiency and transient […]
Metal-film capacitors filter AV mains lines
Würth Elektronik expands its portfolio of components for the mains input: The new series of WCAP-FTY2 film capacitors is optimized for use in noise suppression and complies with X1 or Y2 safety classes in accordance with IEC 60384-14. The very high impulse dielectric strength compared to X2 capacitors, along with other product-specific parameters, is confirmed […]
Metal foil resistors combine high precision with robust thermal performance
Bourns, Inc. released four new Riedon Foil Resistor Series by Bourns. The FPM Series, FPV Series, FWP2324 Series, and FPY Series are designed for high-precision, high-power applications by delivering exceptional accuracy and long-term measurement repeatability. These capabilities enable designers to meet stability, performance, high power, and reliability requirements while also helping to reduce calibration frequency even in certain harsh environments. […]
MOSFET powers 48 V hot swap in AI servers
Alpha and Omega Semiconductor Limited announced its AOLV66935, a 100V High Safe Operating Area (SOA) MOSFET in an LFPAK 8×8 package. AOS’s latest MOSFET is designed as an ideal solution for 48V Hot Swap architectures in AI servers. The power demands of AI servers are intensifying, primarily driven by the increasing performance of the GPU/TPU. […]
3300 V and 2300 V SiC MOSFETs add TAP structure
Navitas Semiconductor has released sample units of its new 3300 V and 2300 V ultra-high-voltage silicon carbide (SiC) MOSFETs, available in power-module formats, discrete packages, and known-good-die (KGD) options. The devices are based on the fourth-generation GeneSiC platform using a Trench-Assisted Planar (TAP) structure that improves electric-field distribution compared to conventional trench or planar MOSFETs. […]
65 W GaN flyback integrates 700 V switch and controller
STMicroelectronics has expanded its VIPerGaN family with the VIPerGaN65W, a 65-watt flyback converter that integrates a 700 V GaN power transistor and a quasi-resonant PWM controller in a 5 mm × 6 mm Power QFN package. The device is designed for USB-PD adapters, fast battery chargers, and auxiliary power supplies that require high efficiency in […]
Power MOSFET features low on resistance
Littelfuse, Inc. announced the release of the MMIX1T500N20X4 X4-Class Ultra-Junction Power MOSFET. This 200 V, 480 A N-channel MOSFET features an exceptionally low on-state resistance (RDS(on)) of just 1.99 mΩ, enabling superior conduction efficiency, simplified thermal management, and improved system reliability in power-dense designs. (View the video.) The MMIX1T500N20X4 utilizes a high-performance, ceramic-based, isolated SMPD-X package with […]
Integrated RC device reduces SiC switching losses and ringing
Melexis has introduced the MLX91299, a silicon-based RC snubber designed for use with silicon carbide (SiC) power modules in automotive and industrial high-voltage systems. The device combines a resistor and a capacitor in a compact structure that supports the mitigation of voltage transients, oscillations, and parasitic effects that commonly occur in wide-bandgap power electronics operating […]
Power resistors feature ratings from 25 W to 200 W
Bourns, Inc. announced that it has increased its Riedon High Power Thick Film Resistors by Bourns with four new product series. The PSD220S, PSD227, PSD126 and PSD220T-50 Series Resistors are available in TO-126, TO-220, TO-227, and SMD DPAK packages. They feature power ratings from 25 to 200 W, low inductance, and excellent pulse handling capabilities that enable enhanced circuit stability […]
