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Featured Contributions

Mitigate reverse recovery overshoot in MOSFET body diodes

November 6, 2024 By Nicolas Lozada-Smith, Power Application Engineer, Wolfspeed Leave a Comment

Because of their compact size, higher efficiency, and superior performance in high-power applications, SiC MOSFETs are now replacing Si devices in switching applications. SiC devices enable faster switching times, significantly reducing switching losses. These advantages stem from the unique electrical and material properties of SiC-based devices — snappy reverse recovery inherent to the structure of […]

Filed Under: diodes, EMI/EMC/RFI, FAQ, Featured, Featured Contributions, MOSFETS, Transistors

Bipolar junction transistors show their muscle

October 23, 2024 By Burkhard Laue, Senior Principle Product Application Engineer, Nexperia 1 Comment

Recent enhancements to the classic BJT show that the classic transistor has plenty of life left and can challenge SiC and GaN devices in some power applications. Amidst the advances in CMOS and wide bandgap semiconductor technology, you can easily forget that the first transistor invented by William Shockley in 1949 was a bipolar junction […]

Filed Under: DC-DC, FAQ, Featured, Featured Contributions, LED Lighting, MOSFETS, Transistors Tagged With: FAQ, nexperia

Selection and implementation of BLDC control strategy

August 28, 2024 By By Shoa Zhang, Qorvo Leave a Comment

By Shao Zhang, Qorvo Understanding the differences between trapezoidal, sinusoidal, and field-oriented control can help engineers understand the value of Field Oriented Control (FOC) and the choices available to optimize their designs. BLDC motors can be smaller, lighter, and quieter than traditional brushed DC motors while enhancing the reliability and energy efficiency of consumer, industrial, […]

Filed Under: FAQ, Featured, Featured Contributions Tagged With: FAQ, qorvo

How do SiC and GaN devices age?

August 21, 2024 By WTWH Editor Leave a Comment

By Peter Friedrichs, Infineon Technologies SiC and GaN devices operate at higher stress levels than silicon devices. The semiconductor and automotive industries have strict qualification tests for that. Silicon carbide (SiC) and gallium nitride (GaN) wide bandgap (WBG) technologies are well known for their performance advantages over silicon (Si) in many high-power areas, including their […]

Filed Under: Automotive, FAQ, Featured, Featured Contributions, Industrial, MOSFETS Tagged With: FAQ, infineontechnologies

How to choose a voltage transducer

July 15, 2024 By Aimee Kalnoskas Leave a Comment

by NK Technologies Choosing the right voltage transducer (also called a voltage sensor) for your application can be daunting since it comes in many configurations. This guide will help you make the right choice. Each application will have unique requirements. To choose the correct voltage transducer, gather the following key criteria, shown in the table […]

Filed Under: FAQ, Featured, Featured Contributions Tagged With: FAQ, nktechnologies

Protecting power supplies: the proper way to parallel for today’s high-power demands

July 3, 2024 By Aimee Kalnoskas Leave a Comment

By EA Elektro-Automatik At its core, a power supply is an electrical device that supplies electric power, a combination of voltage and current, to an electrical load, such as a computer, appliance, consumer electronics, or a battery charger, to name a few. Since the primary use of a power supply is to convert electric power […]

Filed Under: Featured, Featured Contributions, Power Supplies Tagged With: Elektro-Automatik

Increasing voltage demands unleash opportunities for SiC devices

May 8, 2024 By WTWH Editor Leave a Comment

By Didier Balocco, onsemi The trend towards higher voltages opens new opportunities for design with Silicon Carbide. With its higher electron mobility, lower losses, and ability to work at higher temperatures, the case for silicon carbide (SiC) devices in challenging power applications is widely accepted. While the benefits of silicon are significant in key applications, […]

Filed Under: Automotive, FAQ, Featured, Featured Contributions Tagged With: FAQ

High-density power-conversion technology enablers using GaN

April 24, 2024 By WTWH Editor Leave a Comment

By Brent McDonald, Texas Instruments Modern electronic systems need small, lightweight, high-efficiency power supplies. These supplies require cost-effective methods to take power from the AC power distribution grid and convert it to a form that can run the necessary electronics. High switching frequencies are among the most significant enablers for small size. To that end, […]

Filed Under: FAQ, Featured, Featured Contributions Tagged With: FAQ

How to quantify pulse current capability of SiC FETs

April 22, 2024 By Pete Losee, Power Devices, Qorvo Leave a Comment

Silicon Carbide FETs go beyond silicon to extend reach to high pulse currents in power conversion applications. Wide bandgap (WBG) semiconductor devices, such as Silicon Carbide (SiC) field-effect transistors (FETs), are renowned for their minimal static and dynamic losses. Beyond these attributes, this technology can endure high pulse currents, proving particularly advantageous in applications like […]

Filed Under: FAQ, Featured, Featured Contributions, Power Electronics Handbook Tagged With: FAQ

Delivering power supply reliability in mission-critical systems

February 27, 2024 By John Toro, Customer Solutions Engineer, Advanced Energy Leave a Comment

There are several factors to consider when selecting a power supply that delivers the high voltages often needed by large and complex high-performance systems. For almost all electronic products and systems, high reliability should be expected. Still, in some markets, reliability cannot be compromised or a trade-off for other performance factors. In particular, mission-critical industrial […]

Filed Under: ac power sources/frequency converters, FAQ, Featured, Featured Contributions, Power Electronics Handbook, Power Supplies Tagged With: FAQ

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How to design ultra-low-power smart thermostats without a C-wire

Vertical power delivery reduces losses in AI processor designs

Protecting Ethernet interfaces in telecommunications applications against common high energy surges

Ionic cooling: a silent revolution in thermal management

Robust design for Variable Frequency Drives and starters

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