Infineon Technologies AG has launched StrongIRFET 2 – the new generation of power MOSFET technology in 80 V and 100 V. Featuring broad availability at distribution partners and excellent price/performance ratio make these right-fit products an easy choice for designers interested in convenient selection and purchasing. Optimized for both low- and high-switching frequencies, the family […]
MOSFETS
Fast-switching IGBT/Schottky diode combo targets on-board charger apps
Infineon Technologies AG has launched the 650 V CoolSiC Hybrid Discrete for Automotive. The device contains a 50 A TRENCHSTOP 5 fast-switching IGBT and a CoolSiC Schottky diode to enable a cost-efficient performance boost as well as high reliability. This combination builds a perfect cost-performance trade-off for hard-switching topologies and supports high system integrity in […]
Rad-tolerant GaN FET handles 15 A, 900 V
SSDI’s latest hermetic GaN FET device, SGR15E90M, utilizes a GaN FET in the place of a silicon MOSFET at the input stage to provide enhanced radiation tolerance. The SGR15E90M’s cascade device structure consists of a high voltage depletion-mode GaN FET at the output stage and a low voltage enhancement-mode GaN FET at the input stage. The […]
Half-bridge automotive MOSFETs offered space-saving LFPAK56D package
Nexperia announced a series of half-bridge (high side & low side) automotive MOSFETs constructed in the space-saving LFPAK56D package format. The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including motor drives and DC/DC converters. The new package provides a half-bridge solution in one device, occupying 30% lower PCB […]
Motor controller includes three-phase gate driver and voltage regulator
Infineon Technologies AG introduces the new IMD110 SmartDriver series. The smart motor controller family combines the iMOTION Motion Control Engine (MCE) with a three-phase gate driver in a compact package. The integrated gate driver is based on the company’s unique silicon-on-insulator (SOI) technology, it can drive a wide variety of MOSFETs and IGBTs in variable […]
24-V input, -40/-60-V withstand voltage P-channel MOSFETs available in single, dual configurations
ROHM Semiconductor announced a 24-model lineup of 24V input, -40V / -60V withstand voltage P-channel MOSFETs available in both single (RqxxxxxAT / RdxxxxxAT / RsxxxxxAT / RFxxxxxAT) and dual configurations (UTxxx5/QHxxx5/SHxxx5). These new devices are ideal for industrial and consumer applications, such as factory automation, robotics, and air conditioning systems. In recent years, as demand […]
IGBTs carry Schottky diodes to boost switching efficiency
Infineon Technologies AG has launched a 650 V CoolSiC Hybrid IGBT portfolio in a discrete package with 650 V blocking voltage. The CoolSiC hybrid product family combines the key benefits of the 650 V TRENCHSTOP 5 IGBT technology and the unipolar structure of co-packed Schottky barrier CoolSiC diodes. With superior switching frequencies and reduced switching […]
The advantages of generation-four SiC FETs
New silicon-carbide FETs perform better than previous versions and can replace silicon MOSFETs with relative ease. Anup Bhalla, VP Engineering UnitedSiC Wide-bandgap (WBG) semiconductors are now accepted as the future of high-efficiency power conversion. The reason: they provide lower conduction and switching losses than otherwise-comparable silicon-based IGBTs or MOSFETs. Since the introduction of WBG silicon […]
Type-C PD source protection switch handles up to 28 V
Alpha and Omega Semiconductor Limited announced a new Type-C Power Delivery (PD) high voltage source protection switch capable of up to 28V absolute maximum voltage. The AOZ1374 is a smart protection switch in a small thermally enhanced 3mm x 3mm DFN package. AOS’s prowess in high-performance ICs combined with AOS’s state of the art high SOA MOSFETs using advanced co-packaging […]
New 24 V dual-channel low-side gate driver handles fast MOSFETs, high-current IGBTs
Infineon Technologies AG broadens its EiceDRIVER portfolio with the new 24 V dual-channel low side gate driver with an integrated thermal pad. It can be operated with high switching frequencies as well as the highest peak output currents and offers an enable function. The gate driver is suitable for applications with higher switching frequencies such […]