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MOSFETS

DFN package MOSFETs feature side-wettable flanks

September 12, 2024 By Redding Traiger

Nexperia announced the release of single and dual small-signal MOSFETs in miniature DFN packages. The automotive-qualified devices are available in DFN1110D-3 and DFN1412-6 respectively. Particularly the DFN1110D-3 (1.1mm x 1 mm) package has seen increasingly wide adoption and is quickly becoming the ‘de-facto’ industry standard package for small-signal MOSFETs and bipolar transistors intended for use […]

Filed Under: Automotive, Development Tools, MOSFETS, Power Components Tagged With: nexperia

40 V automotive MOSFETs offer 75 percent weight reduction

September 10, 2024 By Redding Traiger

Magnachip Semiconductor Corporation announced the release of four new 40V 1)MXT MV MOSFETs designed in Power Dual Flat No-Lead (PDFN) 33 packages for automotive applications. As automotive technologies like autonomous driving and infotainment systems advance, the number and variety of motors installed in vehicles are increasing. Consequently, there is a growing importance for high-performance MOSFETs […]

Filed Under: Automotive, Development Tools, MOSFETS, Power Components, Power Management Tagged With: magnachipsemiconductor

5 A MOSFET gate drivers spin motors and drive power supplies

September 4, 2024 By Redding Traiger

Littelfuse, Inc. announces the launch of the IX4341 and IX4342 dual 5 ampere low-side MOSFET gate drivers. These gate drivers are specifically designed for driving MOSFETs and complete the existing IX434x driver series by adding the remaining two logic input versions. The IX434x series now consists of dual non-inverting, dual inverting, and non-inverting and inverting input […]

Filed Under: Data center, Development Tools, drivers, Industrial, MOSFETS, Power Components Tagged With: littelfuse

How do SiC and GaN devices age?

August 21, 2024 By WTWH Editor

By Peter Friedrichs, Infineon Technologies SiC and GaN devices operate at higher stress levels than silicon devices. The semiconductor and automotive industries have strict qualification tests for that. Silicon carbide (SiC) and gallium nitride (GaN) wide bandgap (WBG) technologies are well known for their performance advantages over silicon (Si) in many high-power areas, including their […]

Filed Under: Automotive, FAQ, Featured, Featured Contributions, Industrial, MOSFETS Tagged With: FAQ, infineontechnologies

Latest SiC MOSFETs offer improved performance at lower cost per kW

July 18, 2024 By Aimee Kalnoskas

onsemi has introduced its latest generation silicon carbide technology platform, EliteSiC M3e MOSFETs, to address the growing demand for electrification and renewable energy resources. The company plans to release multiple additional generations through 2030 to support global climate goals and the transition to electrification. The EliteSiC M3e MOSFETs are designed to improve performance and reliability […]

Filed Under: Applications, Data center, MOSFETS Tagged With: ON semiconductor

SiC MOSFETs optimized for AI, EV, and solar systems

June 6, 2024 By Redding Traiger

Navitas Semiconductor announces the launch of their new Gen-3 ‘Fast’ (G3F) 650 V and 1,200 V SiC MOSFETs, designed for applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside chargers, and solar/energy-storage systems (ESS). This new portfolio covers industry-standard packages from D2PAK-7 to TO-247-4, tailored for high-power, high-reliability applications. The G3F […]

Filed Under: AI, Automotive, Data center, Development Tools, MOSFETS Tagged With: navitassemiconductor

How soft switching and SiC devices improve power conversion

June 5, 2024 By Mike Zhu, Qorvo

By Mike Zhu, Qorvo Soft switching in DC-DC converters reduces energy loss. SiC transistors allow for higher switching frequencies and, thus, smaller magnetics, which reduces heat. Efficiency and power density are both essential factors in the design of power converters. Every contributor to energy loss generates heat that needs removal by costly and power-hungry cooling […]

Filed Under: DC-DC, FAQ, Featured, Heatsinks, MOSFETS, power modules, Thermal management Tagged With: FAQ, qorvo

Next-gen, 400 V MOSFET family for advanced AI server power supplies

May 30, 2024 By Redding Traiger

With the increasing power requirements of Artificial Intelligence (AI) processors, server power supplies (PSUs) must deliver more and more power without exceeding the defined dimensions of the server racks. This is driven by a surge in energy demand for high-level GPUs, which could consume 2 kW or more per chip by the end of the […]

Filed Under: AI, Development Tools, Industrial, MOSFETS, Power Components Tagged With: infineontechnolgiesag

Diodes provide current from 10.5A to 15A

May 28, 2024 By Redding Traiger

Diodes Incorporated has announced the expansion of its highly successful DML30xx series smart load switches. The four new products, DML3008LFDS, DML3010ALFDS, DML3011ALFDS, and DML3012LDC, provide high-current (10.5A to 15A) power domain switching control for voltage rails from 0.5V to 20V. Through the array of embedded functions, these devices are highly effective at handling all aspects of power delivery to microcontrollers, […]

Filed Under: Development Tools, diodes, Industrial, MOSFETS, Power Components Tagged With: diodesincorporated

Gate driver optimizes EMI and power efficiency for motor control

April 23, 2024 By Redding Traiger

Infineon Technologies AG introduces the MOTIX TLE9140EQW gate driver IC for brushless DC motors targeting the demanding 24/48 V market. The TLE9140 is tailored for automotive motor control applications featuring higher voltage requirements from 24 V up to a maximum of 72 V, where higher system reliability and faster switching behavior are necessary. The IC […]

Filed Under: Automotive, Development Tools, MOSFETS, Motors and motor control, Power Components, Power Management Tagged With: infineontechnolgiesag

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Featured Contributions

Robust design for Variable Frequency Drives and starters

Meeting demand for hidden wearables via Schottky rectifiers

The case for vehicle 48 V power systems

GaN reliability milestones break through the silicon ceiling

Developing power architecture to support autonomous transportation

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