Infineon Technologies AG introduces the new CoolSiC MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers’ demand for increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The CoolSiC MOSFETs offer a higher DC link voltage so that the power can be increased without increasing the […]
MOSFETS
Gen-2 MOSFET paves way for greener power systems and EV charging
Infineon Technologies AG opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20 percent compared to […]
MOSFET power switches protect 12V automotive circuits
Diodes Incorporated has introduced its first automotive-compliant, dual-channel, high-side power switches—the ZXMS82090S14PQ, ZXMS82120S14PQ, and ZXMS82180S14PQ—as an expansion of its IntelliFET self-protected MOSFET portfolio. These intelligent switches deliver high power within a compact footprint while also providing robust protection and diagnostic capabilities. The series is designed for driving 12V automotive loads, such as LEDs, bulbs, actuators, and motors […]
1200 V SiC power MOSFETs now amiable in half-bridge packages
SemiQ Inc. has expanded its QSiC power modules portfolio with the introduction of a new series of 1200V silicon-carbide (SiC) power MOSFETs in half-bridge packages. Engineered and tested to operate reliably in demanding environments, these new compact, high-performance modules enable high-power-density implementations while minimizing dynamic and static losses. Featuring high breakdown voltage (>1400V), the new […]
650V super junction N-Channel MOSFETs
Central Semiconductor announces the introduction of several new 650V super junction N-Channel MOSFETs designed for high-voltage, fast-switching applications. The latest additions, available in TO-220FP packaging, include: 7-650 (4.7A) 3-650 (7.3A) CDMSJ22010-650 (10A) 8-650 (13.8A) CDMSJ22029-650 (29A) The Super Junction MOSFETs feature a unique die structure, which supports high voltage with comparatively low on-resistance and fast […]
SiC half-bridge power module for hi-rel applications
Solitron Devices announced the introduction of the SD11487, the industry’s first hermetically sealed Silicon Carbide (SiC) Power Module for high-reliability applications. With a unique hermetic packaging format, the 51mm x 30mm x 8mm outline is the smallest hermetically sealed high reliability, high voltage, half-bridge on the market. The integrated format maximizes power density while […]
12 V SiC MOSFETs boast RDS(on) values of 40 Ω and 80 Ω
Nexperia announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ. NSF040120L3A0 and NSF080120L3A0 are the first in a series of planned releases that will see Nexperia’s SiC MOSFET portfolio quickly expand to include devices with […]
Driver uses floating voltage source to control discrete standard power MOSFETs and IGBTs
Littelfuse, Inc. announced the launch of the FDA117 Optically Isolated Photovoltaic Driver. This innovative product generates a floating power source, making it an exceptional choice for isolated switching applications in a wide range of industries. The FDA117 is specifically designed to control discrete standard power MOSFETs and IGBTs using a floating voltage source, ensuring isolation […]
600 V SJ MOSFET cuts series resistance
Magnachip Semiconductor Corporation announced that the Company released its 6th-generation 600V Super Junction Metal Oxide Semiconductor Field Effect Transistor (SJ MOSFET) enhanced with microfabrication technology. This 6th-generation 600V SJ MOSFET (MMD60R175S6ZRH) was built on the 180nm microfabrication process and Magnachip’s latest design technology. This sophisticated technology improves upon the previous generation of SJ MOSFETs by narrowing the […]
Power MOSFET meets AEC-Q101 automotive stress test
Littelfuse, Inc. announced the release of IXTY2P50PA, the first automotive-grade PolarP P-Channel Power MOSFET. This innovative product design meets the demanding requirements of automotive applications, providing exceptional performance and reliability. The key differentiator of the –500 V, –2 A IXTY2P50PA is its AEC-Q101 qualification, making it ideal for automotive applications. This qualification ensures that the […]
