STMicroelectronics’ STPOWER MDmesh M9 and DM9 N-channel super-junction multi-drain silicon power MOSFETs are ideal for switched-mode power supplies (SMPS) in applications from data-center servers and 5G infrastructure to flat-panel televisions. The first devices to be launched are the 650V STP65N045M9 and the 600V STP60N043DM9. Both have very low on-resistance (RDS(on)) per unit area, which maximizes power density and permits compact system dimensions. Each has the […]
MOSFETS
Super junction 600-V MOSFETs boast fast reverse recovery time
ROHM Semiconductor announced that they have added seven new devices, the R60xxVNx series, to the PrestoMOS lineup of 600V Super Junction MOSFETs which stand out for their class-leading low ON resistance and the industry’s fastest reverse recovery time (trr). The R60xxVNx series is optimized for power circuits in industrial equipment requiring high power, such as servers, […]
40-V MOSFET targets BDC motor apps in vehicles
Magnachip Semiconductor Corporation announced that the company has released a new 40V Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) to control Brushless Direct Current (BLDC) motors for automotive applications. Given concerns about global climate change and corresponding efforts to reduce carbon emissions, the Electric Vehicle (EV) market is projected to grow significantly. Omdia, a global market research firm, […]
SiC 1.2-kV MOSFET features low on resistance
Solitron Devices is anouncing the introduction of the SD11720, 1200V Silicon Carbide (SiC), low RDS(on) MOSFET. Complimenting a strong offering of high voltage MOSFETs for high reliability/military applications Solitron is expanding its silicon carbide product offering for demanding commercial and industrial applications. Packaged in a TO-247 the SD11720 is ideally suited for EV, Renewable Energy, Motor […]
SiC 1.2-kV MOSFETs feature high overload capability
Infineon Technologies AG introduces a new CoolSiC technology: the CoolSiC MOSFET 1200 V M1H. The advanced silicon carbide (SiC) chip will be implemented in a widely extended portfolio using the popular Easy module family, along with discrete packages using.XT interconnect technology. The M1H chip offers high flexibility and is suitable for solar energy systems, such […]
Power 150-V MOSFET sports low ON resistance
Toshiba Electronic Devices & Storage Corporation has launched a 150V N-channel power MOSFET “TPH9R00CQH” that uses the latest-generation (*1) process, “U-MOSX-H,” and that is suitable for use in switching power supplies for industrial equipment — including those deployed in data centers and communications base stations. TPH9R00CQH has drain-source on-resistance about 42% lower than TPH1500CNH, a […]
650-V SiC MOSFETs sport low reverse-recovery, drain-source charge
Infineon Technologies AG offers a new family of CoolSiC 650 V silicon carbide (SiC) MOSFETs to deliver reliable, easy-to-use, and cost-effective top performance. The devices build on Infineon’s state-of-the-art SiC trench technology and come in a compact D 2PAK SMD 7-pin package.XT interconnection technology. They target high-power applications including servers, telecom, industrial SMPS, fast EV charging, motor drives, solar energy […]
SiC power MOSFETs handle 3.3 kV, feature low ON resistance
Microchip Technology Inc. announced the expansion of its SiC portfolio with the release of the industry’s lowest on-resistance [RDS(on)] 3.3 kV SiC MOSFETs and highest current-rated SiC SBDs available in the market, enabling designers to take advantage of ruggedness, reliability, and performance. With the expansion of Microchip’s SiC portfolio, designers are equipped with the tools to develop […]
2 W dc-dc converters now in SIP-7 format
Flex Power Modules has introduced a range of encapsulated, through-hole, 2 W DC/DC converters in the industry-standard SIP-7 format. The series includes nominal 12 V, 15 V, and 24 V inputs, and a selection of dual, unregulated outputs are available, suitable for asymmetrical positive and negative gate drive voltages for a wide variety of semiconductor […]
Power super-junction MOSFETs feature 100 m Ω, 140 m Ω on resistance
Alpha and Omega Semiconductor Limited announced the release of 600V 110mOhm and 140mOhm αMOS5 Super Junction MOSFETs in the DFN8x8 Package. αMOS5 is AOS’s latest generation of high voltage MOSFET, designed to meet the high efficiency and high-density needs for Quick Charger, Adapter, PC Power, Server, Industrial Power, Telecom, and Hyperscale Datacenter applications. Today’s Server […]
