Infineon Technologies AG expands its growing portfolio of single-channel gate-driver ICs. The new EiceDRIVER 1EDB family of single-channel gate-driver IC provides galvanic input-to-output isolation of 3 kV rms (UL 1577) that ensures rugged ground-loop separation. Their common-mode transient immunity (CMTI) exceeds 300 V/ns, making these devices the perfect choice for hard switching applications enabling numerous topologies. The new […]
MOSFETS
30 V, N-channel MOSFET offers RDS(ON) down to 0.95 mΩ
Vishay Intertechnology, Inc. introduced a versatile new 30 V n-channel TrenchFET Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95 mΩ at 10 […]
GaN FET USB-C power adapter reference design boasts 30 W/in3 power density
Transphorm, Inc. announced a world-class GaN power adapter reference design. The solution is an open frame, 65W USB-C Power Delivery (PD) charger that combines Transphorm’s SuperGaN Gen IV platform with Silanna Semiconductor’s proprietary Active Clamp Flyback (ACF) PWM controller. Together, the technologies yield an unprecedented peak efficiency of 94.5 percent with an uncased power density […]
GaN FET USB-C power adapter reference design boasts 30 W/in3 power density
Transphorm, Inc. announced a world-class GaN power adapter reference design. The solution is an open frame, 65W USB-C Power Delivery (PD) charger that combines Transphorm’s SuperGaN Gen IV platform with Silanna Semiconductor’s proprietary Active Clamp Flyback (ACF) PWM controller. Together, the technologies yield an unprecedented peak efficiency of 94.5 percent with an uncased power density […]
Hybrid flyback controller optimized for USB chargers/adapters
Rapid technology and market developments in the fast charger and adapter market continuously challenge designers of power supply systems. To meet the increasing demand for higher power density and energy efficiency, Infineon Technologies AG expands its XDP family by adding the first application-specific standard product based on an asymmetric half-bridge flyback topology. Available in a […]
Automotive power modules based on SiC MOSFETs
Infineon Technologies AG introduced a new automotive power module with CoolSiC MOSFET technology. At this year’s virtual PCIM trade show, Infineon will present the new HybridPACK Drive CoolSiC, a full-bridge module with 1200 V blocking voltage optimized for traction inverters in electric vehicles (EV). The power module is based on the automotive CoolSiC trench MOSFET […]
SiC 1.2-kV MOSFET power modules target high-power-density apps
Infineon Technologies AG has upgraded the EasyDUAL CoolSiC MOSFET modules with a new aluminum nitride (AIN) ceramic. The devices come in a half-bridge configuration with an on-state resistance (RDS(on)) of 11 mΩ in an EasyDUAL 1B package and 6 mΩ in an EasyDUAL 2B package. With high-performance ceramic, the 1200 V devices are suitable for […]
Hybrid power modules combine SiC MOSFETs and IGBT technology
Infineon Technologies AG has launched a new EasyPACK 2B module in the company’s 1200 V family. The module comes in 3-level Active NPC (ANPC) topology and integrates CoolSiC MOSFETs, TRENCHSTOP IGBT7 devices, and an NTC temperature sensor along with PressFIT contact technology pins. The power module is suitable for fast-switching applications like energy storage systems (ESS). […]
Liquid-cooled SiC intelligent power modules target e-mobility apps
CISSOID is adding to its growing platform of 3-Phase Silicon Carbide (SiC) MOSFET Intelligent Power Module (IPM) products by introducing new liquid-cooled modules for E-mobility tailored for lower switching losses or for a higher power. The company is also introducing a module based on a lightweight AlSiC flat baseplate that meets the demand for natural […]
High-voltage superjunction MOSFETs deliver 10 m Ω RDS(on)
In applications where MOSFETs are switched at low frequency, high-power product designs must meet several key characteristics: They have to minimize conduction losses, provide optimal thermal behavior, and enable more compact and lighter systems – all while maintaining the highest quality at a low cost. To meet these requirements, Infineon Technologies AG is enhancing the […]
