Magnachip Semiconductor Corporation announced that the company had launched its eighth-generation 150V MXT Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)1 optimized for Light Electric Vehicle (LEV) motor controllers and battery management systems (BMSs). Energy efficiency plays a critical role in electric devices regarding power consumption and product stability. This newly-released MOSFET (MDT15N054PTRH) features Magnachip’s eighth-generation trench MOSFET technology […]
MOSFETS
High-efficiency 20-V N-channel MOSFET optimized for switching in small, thin devices
ROHM Semiconductor announced they have developed a compact, high-efficiency 20V N-channel MOSFET (RA1C030LD), optimized for switching in small, thin devices, including smartphones and wearables such as wireless earbuds and other hearable equipment. In recent years, the increasing sophistication and power requirements of compact devices have resulted in larger batteries that reduce the space available for […]
Power MOSFETs include PQFN dual-side cooled 25-150 V devices
The design of future power electronic systems is continuously pushed to improve state-of-the-art performance and power density. Supporting this trend, Infineon Technologies AG launches a new Source-Down 3.3 x 3.3 mm² PQFN product family in the 25-150 V classes with Bottom-Side (BSC) and Dual-Side Cooling (DSC) variants. The new product family provides significant enhancements on […]
GaN FETs feature low on resistance with 150/200-V ratings
EPC introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with an exposed top and tiny 3 mm x 5 mm footprint. These devices are the lowest on-resistance (RDS(on)) FETs in the market at 150 V and 200 V in a size that […]
AEC-Q101 qualified GaN FETs target 48-12 V dc/dc conversion, infotainment, LiDAR apps
Efficient Power Conversion Corporation expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 […]
eGaN power FETs feature high power density, tiny footprint
EPC launches the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products. The EPC2619 has an RDS(on) of just 4 mOhms in a tiny, 1.5 mm x 2.5 mm, footprint. The maximum RDS(on) x Area of […]
SiC MOSFETs target automotive, industrial uses
Alpha and Omega Semiconductor Limited announced its new industry-leading 650V and 750V SiC MOSFET platform for both industrial and automotive applications. The 650V SiC MOSFETs are ideal switching solutions for industrial applications such as solar inverters, motor drives, industrial power supplies, and new energy storage systems, while the AEC-Q101 qualified 750V SiC MOSFET line is targeted […]
Super-junction 950-V MOSFETs feature low on resistance
To address contemporary market needs for improved form factors and energy-efficient products, Infineon Technologies has developed a new CoolMOS PFD7 high-voltage MOSFET family, setting a new benchmark in 950 V super junction (SJ) technology. The new 950 V series combines outstanding performance with state-of-the-art ease of use and features an integrated fast body diode ensuring […]
High SOA 30-V MOSFET features low on-resistance
Alpha and Omega Semiconductor Limited announced the release of, AONS30300, a 30V MOSFET with low on-resistance. The AONS30300 features a high Safe Operating Area (SOA) capability making it ideally suited for demanding applications such as hot swap and eFuse. A high SOA is essential in server hot-swap applications where the MOSFET needs to be robust to […]
High SOA MOSFET optimized for 12-V hot swap applications
Alpha and Omega Semiconductor Limited announced the release of, AONS30300, a 30V MOSFET with low on-resistance. The AONS30300 features a high Safe Operating Area (SOA) capability making it ideally suited for demanding applications such as hot swap and eFuse. A high SOA is essential in server hot-swap applications where the MOSFET needs to be robust to […]
