Solitron Devices is pleased to announce the introduction of the SD11710 the latest in our series of hi-rel MOSFETs and the industry’s first military-grade 700V silicon carbide (SiC) device. Packaged in an extremely rugged hermetically sealed TO-258, the SD11710 is built for the most demanding industrial, aerospace, and defense applications. The SD11710 provides RDS(on) […]
MOSFETS
Power MOSFETs available in additional package options
Nexperia announced a broadening of package options for its NextPower 80/100 V MOSFETs portfolio, previously only available in LFPAK56E, to now also include LFPAK56 and LFPAK88 packaging. These devices have been designed to combine high efficiency with reduced spiking behavior in telecommunications, server computing, industrial, power supply, fast charging, USB-PD, and motor control applications. The Qg*RDSon figure […]
30 W charge pump charger features 1:2 reverse boost mode
Halo Microelectronics announces the launch of its HL7132D, a dual-phase 30 W charge pump with 1:2 reverse boost mode. The HL7132D is a low-voltage fast direct charger for 1-cell Li-ion and Li-polymer batteries. The device integrates a dual-phase switched capacitive converter and reverse blocking MOSFET (QRB FET) while achieving over 97 percent efficiency at 4.5 […]
Low ON resistance N-Channel MOSFETs operate on 24V/36V/48V power supplies
ROHM Semiconductor announces the RS6xxxxBx / RH6xxxxBx series of N-channel MOSFETs (40V/60V/80V/100V/150V; 13 part numbers) suitable for applications operating on 24V/36V/48V power supplies, such as base stations, servers, and motors for industrial and consumer equipment. In recent years, worldwide power consumption has been on the rise, driving the need for industrial equipment (e.g., servers and base stations, along […]
Boards let you try power devices in your circuits
Cambridge GaN Devices (CGD) has introduced a range of Application Interface Boards that allow designers to try out the company’s rugged, easy-to-use ICeGaN HEMTs in existing circuits in place of competing MOSFET or GaN devices without having to re-layout the PCB. Application Interface Boards are adaptor PCBs that are soldered to an ICeGaN device, which […]
600 V SJ MOSFET boasts RDS(on) of 44 mΩ for EV chargers and servers
Magnachip Semiconductor Corporation announced that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs) consisting of nine distinct products featuring proprietary design technology. Magnachip’s proprietary design provides a specific on-resistance (RSP) reduction of about 10%, and this result was achieved while maintaining the same cell […]
How SiC MOSFETs and Si IGBTs boost sustainability in green energy systems
Silicon carbide (SIC) MOSFETs and silicon (Si) IGBTs can both boost sustainability in green energy systems. Of course, they don’t compete across the board, there are uses where one or the other is clearly preferred. When comparing the two technologies, it often comes down to the prioritization of performance characteristics like light weight versus low […]
1200 V SiC MOSFETs deliver high power density for EV and energy infrastructure apps
onsemi announced the release of the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which enable power electronics designers to achieve best-in-class efficiency and lower system cost. The new portfolio includes EliteSiC MOSFETs and modules that facilitate higher switching speeds to support the growing number of 800 V electric vehicle (EV) on-board […]
Silicon carbide MOSFET operates to 1200 V, 37 A
Diodes Incorporated introduces the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel SiC MOSFET. This device addresses the demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC-DC converters, and electric vehicle (EV) battery chargers. The […]
Application-specific MOSFETs increase power density by 58x
Nexperia announced the release of its first 80 V and 100 V application-specific MOSFETs (ASFETs) for hot-swap with an enhanced safe operating area (SOA) in a compact 8×8 mm LFPAK88 package. These new ASFETs are fully optimized for demanding hot-swap and soft-start applications and are qualified to 175°C for use in advanced telecom and computing […]