Magnachip Semiconductor Corporation announced the release of a new 80V MXT MV MOSFET, MDLT080N017RH, featuring a TOLT (TO-Leaded Top-Side Cooling) package. The Company has already begun supplying the new MOSFET to a leading global electric motor manufacturer. The TOLT-packaged MOSFET delivers a major advancement in thermal management. Unlike conventional TOLL (TO-Leadless) packages that dissipate heat […]
MOSFETS
How do solid state isolators combine with MOSFETs or IGBTs to optimize SSRs?
Solid-state relays (SSRs) are crucial components in a diverse range of control and power switching applications, spanning white goods, heating, ventilation, and air conditioning (HVAC) equipment, industrial process control, aerospace, and medical systems. Solid-state isolators utilize coreless transformer technology to provide isolation between the high-voltage and low-voltage sides of an SSR. CT-based solid-state isolators (SSIs) […]
Source-down packaging improves power MOSFET thermal performance
Alpha and Omega Semiconductor Limited introduced its AONK40202 25V MOSFET in state-of-the-art DFN3.3×3.3 Source-Down packaging technology. Designed for high power density in DC-DC applications, the AONK40202 provides features that meet the requirements of AI servers and data center power distribution. In particular, its Source-Down packaging technology offers a larger source contact to the PCB, and its […]
SiC MOSFETs feature 6.45 mm creepage in HV-T2Pak package for 1200 V applications
Navitas Semiconductor introduces a new level of reliability to meet the system lifetime requirements of the most demanding automotive and industrial applications. Navitas’ latest generation of 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2Pak top-side cooled package, delivers the industry’s highest creepage of 6.45 mm to meet IEC-compliance for applications […]
MOSFET meets 48V telecom/datacenter hot-swap requirements
Alpha and Omega Semiconductor Limited announced its AOTL66935 utilizes AOS’ 100V AlphaSGT proprietary MOSFET technology, which combines the advantages of trench technology for low on-resistance with high safe operating area (SOA) capability that meets 48V hot swap requirements in AI server and telecom applications. The AOTL66935 hot swap MOSFET prevents damage to the system by limiting […]
Co-packaged SiC MOSFETs offer switching speeds as low as 67 ns
SemiQ Inc has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. In addition to smaller die sizes, third-generation SIC devices offer faster switching speeds and reduced losses. The family of highly rugged and easy mount devices currently offers six devices with an RDSon range of 8.4 to 39 […]
Compact 8 mm × 8 mm PMIC suppors dynamic voltage adjustment in 12.5 mV increments
Microchip Technology announces the MCP16701, a Power Management Integrated Circuit (PMIC) designed to meet the needs of high-performance MPU and FPGA designers. The MCP16701 integrates eight 1.5A buck converters that can be paralleled, four 300 mA internal Low Dropout Voltage Regulators (LDOs), and a controller to drive external MOSFETs. This highly integrated device can result in a […]
Temperature-stable MOSFET for supercap voltage regulation in industrial applications
Advanced Linear Devices Inc. (ALD) announced its latest addition to its Supercapacitor Auto-Balancing (SAB™) MOSFET family. This dual MOSFET provides unmatched auto-balancing capabilities and power management for supercapacitors ranging from 2.8V to 3.3V. The ALD910030 uses virtually no power for cell balancing and prevents most catastrophic failures. The chip enhances performance across various sectors, including […]
Power MOSFET reaches 0.048 Ω RDSon
Vishay Intertechnology, Inc. introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHK050N65E slashes on-resistance by 48.2 % while offering a 65.4 % lower resistance times gate charge, a key figure of […]
500 V SMT transformers shrink in size
TDK has announced the EPCOS EP9 series of surface-mount transformers (ordering code B82804E). At 13 × 11 × 11 mm, these parts are smaller than the company’s existing E10EM series of SMT transformers designed for IGBT and FET gate driver circuits. Engineered for high performance in demanding e-mobility and industrial applications with 500 V system […]
