GaN Systems launches the electronics industry’s first online portal and newsroom solely focused on GaN power innovation – www.gannewsroom.com. Gannewsroom.com keeps the media and power design engineers up-to-date with respect to GaN innovations, and designing GaN transistors into electronic systems. Now power industry professionals have access to a central repository that contains press releases, videos, […]
MOSFETS
More power IC technologies challenge design decisions
By Roger Allan, contributing writer There’s good news for power supply system designers. Silicon-based power devices are making performance advances in diode, transistor, and field-effect transistor (FET) functions. But wide-bandgap semiconductor IC technologies like gallium nitride (GaN) and silicon carbide (SiC) are poised to grow rapidly, offering designers greater performance in a smaller package, making […]
High-voltage MOSFETs target high-speed switch designs
Toshiba America Electronic Components, Inc.(TAEC)* today announced a new lineup of ultra-efficient, high-speed, high-voltage MOSFETs for switching voltage regulator designs. Available with 800V and 900V ratings, the four N-channel devices (TK4A80E, TK5A80E, TK3A90E, TK5A90E) are targeted to applications including flyback converters in LED lighting, supplementary power supplies and other circuits that require current switching below […]
Super-junction MOSFETs handle 1.5 kV in TO-220FP package
STMicroelectronics has introduced a portfolio of TO-220 FullPAK (TO-220FP) wide creepage power transistors, including the world’s first 1500V super-junction MOSFET in this new important arcing-resistant package. The TO-220FP wide creepage package is ideal for the power transistors of open-frame power supplies commonly used in equipment such as television sets and PCs, which are vulnerable to […]
Top power electronics threads on EDAboard.com – July
(editor’s note: Intrigued by these power electronics problems? Have a question or optional solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the forum thread.) 12 V DC to 115 V AC sine wave inverter – I am making a 12 V DC to […]
Power module targets vehicular brushless-motor apps
ON Semiconductor has further expanded its portfolio of automotive Power Integrated Modules (PIMs) with the introduction of the STK984-190-E. Optimized for driving 3-phase brushless DC motors in modern automotive applications, this module contains six 40 V, 30 A MOSFETs configured as a three-phase bridge with an additional 40 V, 30 A high-side reverse battery protection […]
Fast isolated gate driver for high-voltage applications handles 5.7 kVrms
Texas Instruments introduced the industry’s fastest 5.7-kVRMS isolated dual-channel gate driver, the first of a new gate driver family in TI’s isolation portfolio. The UCC21520’s flexible, universal compatibility enables its use as an isolated driver in low-side, high-side, high-side/low-side or half-bridge power management designs. With its integrated components, advanced protection features and optimized switching performance, […]
Automatic decay scheme for stepper motor current regulation
by Rakesh Raja and Sudhir Nagaraj || Closed-loop current regulation in stepper motors plays a major role in determining the accuracy and smoothness of motor motion. The scheme of current control also determines the power efficiency of the motor drive system. A typical pulse-width modulation (PWM) control loop used today has a suite of fixed-decay […]
Top power electronics threads on EDABoard.com – June
(editor’s note: Intrigued by the problem? Have a question or optional solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the forum thread.) Resistor mounting conditions for full power rating at 70degC ambient? – For the PF2512FKF7W0R007L (7mΩ) 2512 SMT resistor, what is […]
SiC power MOSFET handles 225°C junction temperatures
TT Electronics, a global provider of engineered electronics for performance critical applications, today launched a Silicon Carbide (SiC) power MOSFET that is designed for high temperature, power efficiency applications with a maximum junction temperature of +225°C. As a result of this operating potential, the package has a higher ambient temperature capability and can therefore be […]
