Connecting several silicon-carbide MOSFETs in series may be a relatively inexpensive way of fielding high-performance power switches. So say researchers at North Carolina State University’s FREEDM Systems Center. The topology for the new power switches is called the FREEDM Super-Cascode. It combines 12 smaller SiC power MOSFETs in series to reach a power rating of […]
MOSFETS
SuperFET III MOSFETs sport 44% lower RDS(on)
Fairchild Semiconductor, now part of ON Semiconductor), today introduced its SuperFET III family of 650V N-channel MOSFETs, the company’s new generation of MOSFETs that meet the higher power density, system efficiency and exceptional reliability requirements of the latest telecom, server, electric vehicle (EV) charger and solar products. The SuperFET III MOSFET family combines best-in-class reliability, low EMI, excellent […]
800-V MOSFETs incorporate ESD protection
Infineon Technologies AG introduces the 800 V CoolMOS™ P7 series. Based on the superjunction technology, this 800 V MOSFET combines best-in-class performance with exceptional ease-of-use. This new product family is a perfect fit for low power SMPS applications, fully addressing market needs in performance, ease of design, and price/performance ratio. It mainly focuses on flyback […]
N-channel MOSFET handles 100 V/160 A in automotive applications
Toshiba America Electronic Components, Inc. (TAEC) today announced the expansion of its lineup of automotive N-channel power MOSFETs with the addition of a new 100V, 160A device: the TK160F10N1L. Offering low on-resistance and a low voltage drive as well as a narrowed gate threshold voltage, the TK160F10N1L keeps current balances in parallel operation in large-current applications […]
Power Electronics Resource Places GaN “At the Heart of Your System”
GaN Systems launches the electronics industry’s first online portal and newsroom solely focused on GaN power innovation – www.gannewsroom.com. Gannewsroom.com keeps the media and power design engineers up-to-date with respect to GaN innovations, and designing GaN transistors into electronic systems. Now power industry professionals have access to a central repository that contains press releases, videos, […]
More power IC technologies challenge design decisions
By Roger Allan, contributing writer There’s good news for power supply system designers. Silicon-based power devices are making performance advances in diode, transistor, and field-effect transistor (FET) functions. But wide-bandgap semiconductor IC technologies like gallium nitride (GaN) and silicon carbide (SiC) are poised to grow rapidly, offering designers greater performance in a smaller package, making […]
High-voltage MOSFETs target high-speed switch designs
Toshiba America Electronic Components, Inc.(TAEC)* today announced a new lineup of ultra-efficient, high-speed, high-voltage MOSFETs for switching voltage regulator designs. Available with 800V and 900V ratings, the four N-channel devices (TK4A80E, TK5A80E, TK3A90E, TK5A90E) are targeted to applications including flyback converters in LED lighting, supplementary power supplies and other circuits that require current switching below […]
Super-junction MOSFETs handle 1.5 kV in TO-220FP package
STMicroelectronics has introduced a portfolio of TO-220 FullPAK (TO-220FP) wide creepage power transistors, including the world’s first 1500V super-junction MOSFET in this new important arcing-resistant package. The TO-220FP wide creepage package is ideal for the power transistors of open-frame power supplies commonly used in equipment such as television sets and PCs, which are vulnerable to […]
Top power electronics threads on EDAboard.com – July
(editor’s note: Intrigued by these power electronics problems? Have a question or optional solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the forum thread.) 12 V DC to 115 V AC sine wave inverter – I am making a 12 V DC to […]
Power module targets vehicular brushless-motor apps
ON Semiconductor has further expanded its portfolio of automotive Power Integrated Modules (PIMs) with the introduction of the STK984-190-E. Optimized for driving 3-phase brushless DC motors in modern automotive applications, this module contains six 40 V, 30 A MOSFETs configured as a three-phase bridge with an additional 40 V, 30 A high-side reverse battery protection […]