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MOSFETS

Automotive power MOSFETs have high power density thanks to Tiny 5×6-mm dual-side cooling package

May 22, 2017 By Aimee Kalnoskas

STMicroelectronics has introduced new MOSFET devices in the advanced PowerFLATTM 5×6 dual-side cooling (DSC) package, enabling increased power density in automotive Electronic Control Units (ECUs). The new MOSFETs have already been chosen by Denso, a leading supplier of advanced automotive technology to all major car makers. The STLD200N4F6AG and STLD125N4F6AG are 40V devices for automotive […]

Filed Under: MOSFETS Tagged With: stmicroeletronics

Mouser to stock D3 650V-rated superjunction MOSFETs

May 18, 2017 By Aimee Kalnoskas

D3 Semiconductor announces that Mouser Electronics is now its global distribution partner. According to the agreement, Mouser is stocking D3 Semi’s full product line of +FET™ line of 650V-rated superjunction MOSFETs, which exhibit best-in-class performance in hard-switched applications such as PFC boost and inverters used in telecom, enterprise computing, UPS and solar. D3 Semi marks its […]

Filed Under: MOSFETS, Power Supply News Tagged With: d3semiconductor, mouserelectronics

Half-bridge modules carry 1.2-kV SiC MOSFETs

May 16, 2017 By Aimee Kalnoskas

Higher efficiency, increased power density, smaller footprints and reduced system costs: these are the main advantages of transistors based on silicon carbide (SiC). Infineon Technologies AG is starting volume production for the EASY 1B, the first full-SiC module announced during PCIM 2016. On the occasion of this year’s PCIM in Nuremberg, the company is showcasing […]

Filed Under: MOSFETS

Power MOSFETs with fast-recovery diode target ZVS converter apps

May 15, 2017 By Aimee Kalnoskas

The latest MDmesh DK5 power MOSFETs from STMicroelectronics are Very High-Voltage (VHV) super-junction transistors with the extra advantage of a fast-recovery diode. This helps designers maximize the efficiency of various power-conversion topologies including LLC resonant converters with Zero-Voltage Switching (ZVS). As super-junction MOSFETs, the new devices — in voltage ratings from 950V to 1050V — […]

Filed Under: MOSFETS Tagged With: stmicroeletronics

Littelfuse and Monolith Semiconductor debut 1200 V Silicon Carbide (SiC) Schottky diodes at PCIM

May 15, 2017 By Aimee Kalnoskas

Littelfuse, Inc. and Monolith Semiconductor, Inc. introduced the first commercially available silicon carbide devices developed through their partnership: the GEN2 Series of 1200 V Silicon Carbide (SiC) Schottky Diodes. Visitors to the Littelfuse booth (Hall 7, Booth 335) at the PCIM (Power Conversion and Intelligent Motion) Europe 2017 Exhibition can talk to technical experts about […]

Filed Under: MOSFETS, Transistors Tagged With: littelfuse, monolithsemiconductor

N-channel MOSFETs sport super-low on resistance

May 11, 2017 By Aimee Kalnoskas

Toshiba America Electronic Components, Inc. (TAEC)* has expanded its U-MOS IX-H Series of low-voltage N-channel power MOSFETs with the addition of new 40V and 45V products. Delivering high-speed performance and industry-leading[1] low on-resistance, the new MOSFETs are designed for industrial and consumer applications, including high-efficiency DC-DC converters, high-efficiency AC-DC converters, power supplies, and motor drives. The new […]

Filed Under: MOSFETS Tagged With: taec, toshiba

Reference design covers 3-kW continuous current-mode bridgeless Totem Pole PFC in GaN

May 9, 2017 By Aimee Kalnoskas

Achieving efficiencies greater than 98% in conventional Power Factor Correction (PFC) circuits is challenging. The major hurdle is fixed diode bridge losses. An option to overcome this is to use silicon MOSFETs in place of the diodes to achieve efficiencies of 99% or more. However, this BTPPFC approach suffers from poor reverse recovery performance, is […]

Filed Under: MOSFETS Tagged With: gansystems

Top power electronics threads on EDAboard.com – April

May 1, 2017 By Aimee Kalnoskas

(editor’s note: Intrigued by these power electronics problems? Have a question or another solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the power electronics forum threads.) Cheap mains conducted emissions tester? – Our direct drive, 100W offline, non-isolated LED driver failed EMC […]

Filed Under: Capacitors, Featured, MOSFETS, Power Components, Transformers Tagged With: fairchildsemiconductor, infineon, internationalrectifier, mouserelectronics, multicomp, onsemiconductor, premierfarnellgroup, tektronix, texasinstrumentsinc

Video line-up: Gallium nitride semiconductors at APEC 2017

April 21, 2017 By Lee Teschler

apec video gallery

The recently concluded APEC 2017 in Tampa played host to a lot of technological developments involving GaN semiconductors. Here are a few of the demos on the exhibit floor that highlighted what these wide band gap devices can do for power circuits.   In the future, your TV set may not need a power cord […]

Filed Under: MOSFETS Tagged With: epc, gansystems, onsemiconductor, texasinstrumentsinc

40-V MOSFET targets battery powered tool, small EV apps

April 13, 2017 By Aimee Kalnoskas

Infineon Technologies AG complements its StrongIRFET™ family with a 40 V MOSFET packaged in D²PAK 7pin+. The new MOSFET family offers an extremely low R DS(on) of 0.65 mΩ and the highest current carrying capability in the industry. This increases both robustness and reliability for high power density applications which require high efficiency and reliability. The surface […]

Filed Under: MOSFETS Tagged With: infineontechnologies

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Featured Contributions

Robust design for Variable Frequency Drives and starters

Meeting demand for hidden wearables via Schottky rectifiers

The case for vehicle 48 V power systems

GaN reliability milestones break through the silicon ceiling

Developing power architecture to support autonomous transportation

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