Phase shift full-bridge SMPS is massively over-hyped? – The Phase Shift Full Bridge (PSFB) converter is a hoax. The LTspice simulation (Editor’s note: see post for file) of a “plain” full-bridge SMPS bears this out. PSFB claims to be able to reduce switching losses compared to the “plain” full-bridge SMPS. However, the PSFB does have turn-OFF switching losses, just […]
MOSFETS
Infineon Power MOSFETs Make Electrical Appliances More Compact and Durable
DIY tools such as cordless drills and saws have to be handy and durable. Therefore, the electronic components used in the applications need to be space-saving and rugged. Infineon Technologies AG has extended its StrongIRFET™ Power MOSFET family and thereby provides a solution that fulfills both requirements. The Logic Level StrongIRFETs™ can be driven directly […]
Power MOSFETs come in smaller packages
Fairchild, a global supplier of high-performance semiconductor solutions, launched its industry-leading mid-voltage MOSFET technology in a Dual Cool™ 8mm x 8mm package. The new Dual Cool 88 MOSFET gives power conversion engineers a first-of-its-kind alternative to bulky D2-PAK packages at half the size and with higher power density, superior efficiency and better cooling via air flow […]
Power MOSFETs for light and compact switching power conversion devices
STMicroelectronics has extended its MDmesh™ M2 series of N-channel power MOSFETs with the introduction of a new family of devices that offer high power efficiencies in power supplies for servers, laptops, telecom, and consumer applications, especially under light-load conditions. With these new devices, designers can create switching power conversion devices that are lighter and more compact, while […]
900V SiC MOSFET for high frequency power applications
Cree, Inc. has introduced its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with […]
Power converters with GaN
by Alex Lidow, CEO, Efficient Power Conversion Corp. It can be tricky to analyze power supply designs incorporating GaN power devices. Here are the basics of calculating losses and device currents when using these exotic semiconductors. There is a lot of activity in wide-bandgap semiconductors these days. They have the ability to operate at much […]
Cree MOSFET, Schottky diode design kit
Cree, Inc. has introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree® MOSFET and Schottky diode performance in a configurable half bridge circuit. Quick and easy to assemble and use, the new design kit enables comparative testing between IGBTs and Cree MOSFETs, and provides an effective layout […]
IR’s Family of Battery Protection MOSFETs Offers Cost-Effective, Flexible Solution for Mobile Applications
International Rectifier, IR® (NYSE: IRF) announced the introduction of an extensive portfolio of devices featuring IR’s latest low-voltage MOSFET silicon for lithium-ion battery protection applications including the IRL6297SD dual N-channel DirectFET® MOSFET. Featuring very low on-state resistance (RDS(on)) to significantly cut conduction losses, the new power MOSFETs are available as 20V and 30V devices in […]
Converters work with IGBT gate drives
Murata has announced the MGJ3 and MGJ6 series of configurable output voltage, high isolation DC-DC converters from Murata Power Solutions. These 3 Watt and 6 Watt surface mounted devices are optimized for use as high-side and low-side gate drivers in IGBT and MOSFET bridge circuit designs. Providing triple output voltages of +15, +5 and +5 […]
Spice model for SiC MOSFETs
Cree, Inc., has expanded the company’s design-in support for the C2M Series SiC MOSFET power devices with the release of a new SPICE model. Fast and accurate, the new model effectively demonstrates the benefits of Cree SiC MOSFETs – including the C2M0025120D device, which recently pierced the on-resistance barrier by delivering 1200 V of blocking […]
