STMicroelectronics has introduced new MOSFET devices in the advanced PowerFLATTM 5×6 dual-side cooling (DSC) package, enabling increased power density in automotive Electronic Control Units (ECUs). The new MOSFETs have already been chosen by Denso, a leading supplier of advanced automotive technology to all major car makers. The STLD200N4F6AG and STLD125N4F6AG are 40V devices for automotive […]
MOSFETS
Mouser to stock D3 650V-rated superjunction MOSFETs
D3 Semiconductor announces that Mouser Electronics is now its global distribution partner. According to the agreement, Mouser is stocking D3 Semi’s full product line of +FET™ line of 650V-rated superjunction MOSFETs, which exhibit best-in-class performance in hard-switched applications such as PFC boost and inverters used in telecom, enterprise computing, UPS and solar. D3 Semi marks its […]
Half-bridge modules carry 1.2-kV SiC MOSFETs
Higher efficiency, increased power density, smaller footprints and reduced system costs: these are the main advantages of transistors based on silicon carbide (SiC). Infineon Technologies AG is starting volume production for the EASY 1B, the first full-SiC module announced during PCIM 2016. On the occasion of this year’s PCIM in Nuremberg, the company is showcasing […]
Power MOSFETs with fast-recovery diode target ZVS converter apps
The latest MDmesh DK5 power MOSFETs from STMicroelectronics are Very High-Voltage (VHV) super-junction transistors with the extra advantage of a fast-recovery diode. This helps designers maximize the efficiency of various power-conversion topologies including LLC resonant converters with Zero-Voltage Switching (ZVS). As super-junction MOSFETs, the new devices — in voltage ratings from 950V to 1050V — […]
Littelfuse and Monolith Semiconductor debut 1200 V Silicon Carbide (SiC) Schottky diodes at PCIM
Littelfuse, Inc. and Monolith Semiconductor, Inc. introduced the first commercially available silicon carbide devices developed through their partnership: the GEN2 Series of 1200 V Silicon Carbide (SiC) Schottky Diodes. Visitors to the Littelfuse booth (Hall 7, Booth 335) at the PCIM (Power Conversion and Intelligent Motion) Europe 2017 Exhibition can talk to technical experts about […]
N-channel MOSFETs sport super-low on resistance
Toshiba America Electronic Components, Inc. (TAEC)* has expanded its U-MOS IX-H Series of low-voltage N-channel power MOSFETs with the addition of new 40V and 45V products. Delivering high-speed performance and industry-leading[1] low on-resistance, the new MOSFETs are designed for industrial and consumer applications, including high-efficiency DC-DC converters, high-efficiency AC-DC converters, power supplies, and motor drives. The new […]
Reference design covers 3-kW continuous current-mode bridgeless Totem Pole PFC in GaN
Achieving efficiencies greater than 98% in conventional Power Factor Correction (PFC) circuits is challenging. The major hurdle is fixed diode bridge losses. An option to overcome this is to use silicon MOSFETs in place of the diodes to achieve efficiencies of 99% or more. However, this BTPPFC approach suffers from poor reverse recovery performance, is […]
Top power electronics threads on EDAboard.com – April
(editor’s note: Intrigued by these power electronics problems? Have a question or another solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the power electronics forum threads.) Cheap mains conducted emissions tester? – Our direct drive, 100W offline, non-isolated LED driver failed EMC […]
Video line-up: Gallium nitride semiconductors at APEC 2017
The recently concluded APEC 2017 in Tampa played host to a lot of technological developments involving GaN semiconductors. Here are a few of the demos on the exhibit floor that highlighted what these wide band gap devices can do for power circuits. In the future, your TV set may not need a power cord […]
40-V MOSFET targets battery powered tool, small EV apps
Infineon Technologies AG complements its StrongIRFET™ family with a 40 V MOSFET packaged in D²PAK 7pin+. The new MOSFET family offers an extremely low R DS(on) of 0.65 mΩ and the highest current carrying capability in the industry. This increases both robustness and reliability for high power density applications which require high efficiency and reliability. The surface […]
