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MOSFETS

Current Circuit: MOSFET bridge rectifier with low forward drop

January 20, 2017 By Aimee Kalnoskas

by “Crutschow“, forum member on Electro-Tech-Online.com The lowest input to output voltage drop you can get with a standard bridge rectifier is nearly a volt through the two conducting diodes for each half cycle, even with Schottky diodes in the bridge. That can generate a dissipation of about a watt per amp of output current in […]

Filed Under: Featured, MOSFETS, Power Supplies

700-V MOSFETs target quasi resonant flyback topologies

January 18, 2017 By Aimee Kalnoskas

Infineon Technologies AG  developed the new 700 V CoolMOS™ P7 family to serve today’s and tomorrow’s trends in quasi-resonant flyback topologies. These new MOSFETs offer unmatched performance improvements compared to currently used superjunction technologies. Soft switching topologies like smart phone and tablet chargers but also notebook adapters profit from this advantage. Additionally, the new CoolMOS supports fast […]

Filed Under: MOSFETS Tagged With: infineon

SiC MOSFETs deliver 196 A for EV drivetrain uses

January 11, 2017 By Aimee Kalnoskas

Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has introduced a 900V, 10mΩ MOSFET rated for 196 A of continuous drain current at a case temperature of 25°C. This device enables the reduction of EV drive-train inverter losses by 78 percent based on EPA combined city/highway mileage standards. This efficiency […]

Filed Under: MOSFETS Tagged With: wolfspeed

Top power electronics threads on EDAboard.com – December

January 3, 2017 By Aimee Kalnoskas

(editor’s note: Intrigued by these power electronics problems? Have a question or another solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the power electronics forum thread.) Designing adjustable voltage SMPS – I am planning to make an adjustable voltage SMPS. How do I […]

Filed Under: AC-DC, Controllers, Converters, DC-DC, Featured, Industry Experts, MOSFETS, Power Components, Power Management, Regulators, RF Power, Simulation

The 10 most popular posts on Power Electronic Tips for 2016

December 28, 2016 By Aimee Kalnoskas

We went into our article archives to uncover the most widely read posts on powerelectronictips.com over the past 12 months. Here for your reading (or re-reading?) pleasure are the top 10 stories: Teardown: What’s inside a Phillips Sonicare electric toothbrush?  How and when MOSFETS blow up Gallery: Scenes from Texas Instruments’ power supply design seminar […]

Filed Under: FAQ, Featured, MOSFETS, Power Management, Power Supplies, Wireless Tagged With: powerelectronictips.com

What is the MOSFET body diode?

December 15, 2016 By Joshua Israelsohn

MOSFET

Unlike virtually every other active device, the power MOSFET is unusual in that its schematic symbol includes a parasitic device – the body diode. The body diode is intrinsic to the device’s structure. It remains despite a number of fundamental changes in power MOSFET structure and device designs including the two most common types today […]

Filed Under: FAQ, Featured, MOSFETS Tagged With: body diode, MOSFET

N-channel MOSFETs with low on-resistance target mobile devices

November 30, 2016 By Aimee Kalnoskas

 Toshiba America Electronic Components, Inc. (TAEC)* has expanded its lineup of small, low on-resistance MOSFETs with the addition of the SSM6K513NU and SSM6K514NU. The new N-channel MOSFETs feature industry-leading[1] low on-resistance, and are suited for use as load switches in mobile devices such as smartphones and tablets. The 30V SSM6K513NU and 40V SSM6K514NU utilize Toshiba’s latest U-MOS […]

Filed Under: MOSFETS Tagged With: taec, toshiba

150-V MOSFETs offer 25% lower R DS(on) in SuperSO8 package

October 12, 2016 By Aimee Kalnoskas

Aiming at high-efficiency designs and applications, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the OptiMOS™ 5 150 V portfolio. This product family further expands the industry-leading OptiMOS 5 generation of power MOSFETs. The new 150 V product family is especially optimized for high-performance applications which require low charges, high power density and yet high […]

Filed Under: MOSFETS Tagged With: infineon

1 kV SiC MOSFET optimized for charging station use

October 6, 2016 By Aimee Kalnoskas

Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has introduced a 1000V MOSFET that enables a reduction in overall system cost, while improving system efficiency and decreasing system size. The new MOSFET, specially optimized for fast charging and industrial power supplies, enables a 30 percent reduction in component count while […]

Filed Under: MOSFETS, Transistors Tagged With: cree, wolfspeed

New technique cuts costs of SiC high-voltage switches

October 5, 2016 By Lee Teschler

Connecting several silicon-carbide MOSFETs in series may be a relatively inexpensive way of fielding high-performance power switches. So say researchers at North Carolina State University’s FREEDM Systems Center. The topology for the new power switches is called the FREEDM Super-Cascode. It combines 12 smaller SiC power MOSFETs in series to reach a power rating of […]

Filed Under: Featured, MOSFETS, Semiconductor Tagged With: FREEDM center, north carolina state

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Featured Contributions

Robust design for Variable Frequency Drives and starters

Meeting demand for hidden wearables via Schottky rectifiers

The case for vehicle 48 V power systems

GaN reliability milestones break through the silicon ceiling

Developing power architecture to support autonomous transportation

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