by “Crutschow“, forum member on Electro-Tech-Online.com The lowest input to output voltage drop you can get with a standard bridge rectifier is nearly a volt through the two conducting diodes for each half cycle, even with Schottky diodes in the bridge. That can generate a dissipation of about a watt per amp of output current in […]
MOSFETS
700-V MOSFETs target quasi resonant flyback topologies
Infineon Technologies AG developed the new 700 V CoolMOS™ P7 family to serve today’s and tomorrow’s trends in quasi-resonant flyback topologies. These new MOSFETs offer unmatched performance improvements compared to currently used superjunction technologies. Soft switching topologies like smart phone and tablet chargers but also notebook adapters profit from this advantage. Additionally, the new CoolMOS supports fast […]
SiC MOSFETs deliver 196 A for EV drivetrain uses
Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has introduced a 900V, 10mΩ MOSFET rated for 196 A of continuous drain current at a case temperature of 25°C. This device enables the reduction of EV drive-train inverter losses by 78 percent based on EPA combined city/highway mileage standards. This efficiency […]
Top power electronics threads on EDAboard.com – December
(editor’s note: Intrigued by these power electronics problems? Have a question or another solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the power electronics forum thread.) Designing adjustable voltage SMPS – I am planning to make an adjustable voltage SMPS. How do I […]
The 10 most popular posts on Power Electronic Tips for 2016
We went into our article archives to uncover the most widely read posts on powerelectronictips.com over the past 12 months. Here for your reading (or re-reading?) pleasure are the top 10 stories: Teardown: What’s inside a Phillips Sonicare electric toothbrush? How and when MOSFETS blow up Gallery: Scenes from Texas Instruments’ power supply design seminar […]
What is the MOSFET body diode?
Unlike virtually every other active device, the power MOSFET is unusual in that its schematic symbol includes a parasitic device – the body diode. The body diode is intrinsic to the device’s structure. It remains despite a number of fundamental changes in power MOSFET structure and device designs including the two most common types today […]
N-channel MOSFETs with low on-resistance target mobile devices
Toshiba America Electronic Components, Inc. (TAEC)* has expanded its lineup of small, low on-resistance MOSFETs with the addition of the SSM6K513NU and SSM6K514NU. The new N-channel MOSFETs feature industry-leading[1] low on-resistance, and are suited for use as load switches in mobile devices such as smartphones and tablets. The 30V SSM6K513NU and 40V SSM6K514NU utilize Toshiba’s latest U-MOS […]
150-V MOSFETs offer 25% lower R DS(on) in SuperSO8 package
Aiming at high-efficiency designs and applications, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the OptiMOS™ 5 150 V portfolio. This product family further expands the industry-leading OptiMOS 5 generation of power MOSFETs. The new 150 V product family is especially optimized for high-performance applications which require low charges, high power density and yet high […]
1 kV SiC MOSFET optimized for charging station use
Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has introduced a 1000V MOSFET that enables a reduction in overall system cost, while improving system efficiency and decreasing system size. The new MOSFET, specially optimized for fast charging and industrial power supplies, enables a 30 percent reduction in component count while […]
New technique cuts costs of SiC high-voltage switches
Connecting several silicon-carbide MOSFETs in series may be a relatively inexpensive way of fielding high-performance power switches. So say researchers at North Carolina State University’s FREEDM Systems Center. The topology for the new power switches is called the FREEDM Super-Cascode. It combines 12 smaller SiC power MOSFETs in series to reach a power rating of […]
