TT Electronics, a global provider of engineered electronics for performance critical applications, today launched a Silicon Carbide (SiC) power MOSFET that is designed for high temperature, power efficiency applications with a maximum junction temperature of +225°C. As a result of this operating potential, the package has a higher ambient temperature capability and can therefore be […]
MOSFETS
SiC half-bridge power module/gate driver
brings low switching losses
Wolf speed (A Cree Company), a global supplier of silicon carbide (SiC) power products, has introduced the first fully-qualified commercial power module from its Fayetteville, Arkansas location. The high-performance 62 mm module represents a new generation: SiC power modules that enable unprecedented efficiency and power density for high current power electronics, such as converters/inverters, motor […]
SiC components on display at PCIM 2016
Wolfspeed, A Cree Company and a supplier of silicon carbide (SiC) power products — including best-in-class SiC MOSFETs, Schottky diodes, and modules — will showcase its latest SiC power devices at PCIM 2016 in Nuremberg, Germany from May 10 to 12. As Europe’s leading conference for power electronics technology and applications in intelligent motion, renewable […]
Top power electronics threads on EDABoard.com – April
(editor’s note: Intrigued by the problem? Have a question or optional solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the forum thread.) How can an offline LED driver last 20 years? – The Cu-Beam light is certainly the best LED light that the […]
Researchers ink nanocrystal FETs onto plastic substrate
by Leland Teschler, Executive Editor A group at the University of Pennsylvania has patterned nanocrystal-based field effect transistors onto flexible plastic backings. The group used ordinary spin coating to create the FETs but say the devices could eventually be constructed by 3D printers. The researchers devised four different inks for the work: a conductor with […]
Fully-qualified 650-V GaN FET boasts 41 mOhm R(on) in a TO-247 package
Transphorm Inc. introduces the TPH3207WS GaN field effect transistor (FET) with the lowest on-resistance (41 mOhm) in a TO-247 package that reduces system volume as much as 50% without sacrificing efficiency. The device’s low Rds(on) and ultra-low Qrr (175nC) bring the benefits of GaN to applications that previously relied on silicon, enabling engineers to achieve […]
Power MOSFETs reduce Rdson resistance
Fairchild has launched the flagship device of the company’s newest generation of 100V N-channel power MOSFETs, the FDMS86181 100V Shielded Gate PowerTrench MOSFET. The FDMS86181 is the first part in Fairchild’s new generation of PowerTrench MOSFETs and it delivers substantial improvements in efficiency, reduced voltage ringing and lower electromagnetic interference (EMI) for power supplies, motor […]
N-channel Power MOSFETs sport efficient thermal design
The latest MDmesh™ DM2 N-channel Power MOSFET transistors from STMicroelectronics create new opportunities for power-supply designers to achieve greater efficiency in low-voltage power supplies for computers, telecom networks, industrial, and consumer devices. As people around the world acquire, store, and share a rapidly increasing amount of digital data such as e-books, videos, photographs, and music […]
Multi-Phase 55-V Synchronous Boost Controllers Simplify target vehicular systems
Intersil Corporation has announced two new 55V two-phase synchronous boost controllers with integrated high-side and low-side MOSFET drivers. The ISL78227 and ISL78229 are the industry’s most robust and highly integrated boost controllers available to simplify the design of high power automotive applications. Operating from a 12V battery supply, these devices boost the output voltage to […]
How and when MOSFETs blow up
by Majeed Ahmad High temperatures and operating conditions outside the safe operating area can sabotage MOSFETs used in switching circuits. The MOSFET (metal-oxide-semiconductor field-effect transistor) is a primary component in power conversion and switching circuits for such applications as motor drives and switch-mode power supplies (SMPSs). MOSFETs boast a high input gate resistance while the […]
