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MOSFETS

The 10 most popular posts on Power Electronic Tips for 2016

December 28, 2016 By Aimee Kalnoskas Leave a Comment

We went into our article archives to uncover the most widely read posts on powerelectronictips.com over the past 12 months. Here for your reading (or re-reading?) pleasure are the top 10 stories: Teardown: What’s inside a Phillips Sonicare electric toothbrush?  How and when MOSFETS blow up Gallery: Scenes from Texas Instruments’ power supply design seminar […]

Filed Under: FAQ, Featured, MOSFETS, Power Management, Power Supplies, Wireless Tagged With: powerelectronictips.com

What is the MOSFET body diode?

December 15, 2016 By Joshua Israelsohn 1 Comment

MOSFET

Unlike virtually every other active device, the power MOSFET is unusual in that its schematic symbol includes a parasitic device – the body diode. The body diode is intrinsic to the device’s structure. It remains despite a number of fundamental changes in power MOSFET structure and device designs including the two most common types today […]

Filed Under: FAQ, Featured, MOSFETS Tagged With: body diode, MOSFET

N-channel MOSFETs with low on-resistance target mobile devices

November 30, 2016 By Aimee Kalnoskas Leave a Comment

 Toshiba America Electronic Components, Inc. (TAEC)* has expanded its lineup of small, low on-resistance MOSFETs with the addition of the SSM6K513NU and SSM6K514NU. The new N-channel MOSFETs feature industry-leading[1] low on-resistance, and are suited for use as load switches in mobile devices such as smartphones and tablets. The 30V SSM6K513NU and 40V SSM6K514NU utilize Toshiba’s latest U-MOS […]

Filed Under: MOSFETS Tagged With: taec, toshiba

150-V MOSFETs offer 25% lower R DS(on) in SuperSO8 package

October 12, 2016 By Aimee Kalnoskas Leave a Comment

Aiming at high-efficiency designs and applications, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the OptiMOS™ 5 150 V portfolio. This product family further expands the industry-leading OptiMOS 5 generation of power MOSFETs. The new 150 V product family is especially optimized for high-performance applications which require low charges, high power density and yet high […]

Filed Under: MOSFETS Tagged With: infineon

1 kV SiC MOSFET optimized for charging station use

October 6, 2016 By Aimee Kalnoskas Leave a Comment

Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has introduced a 1000V MOSFET that enables a reduction in overall system cost, while improving system efficiency and decreasing system size. The new MOSFET, specially optimized for fast charging and industrial power supplies, enables a 30 percent reduction in component count while […]

Filed Under: MOSFETS, Transistors Tagged With: cree, wolfspeed

New technique cuts costs of SiC high-voltage switches

October 5, 2016 By Lee Teschler Leave a Comment

Connecting several silicon-carbide MOSFETs in series may be a relatively inexpensive way of fielding high-performance power switches. So say researchers at North Carolina State University’s FREEDM Systems Center. The topology for the new power switches is called the FREEDM Super-Cascode. It combines 12 smaller SiC power MOSFETs in series to reach a power rating of […]

Filed Under: Featured, MOSFETS, Semiconductor Tagged With: FREEDM center, north carolina state

SuperFET III MOSFETs sport 44% lower RDS(on)

September 20, 2016 By Aimee Kalnoskas Leave a Comment

Fairchild Semiconductor, now part of ON Semiconductor), today introduced its SuperFET III family of 650V N-channel MOSFETs, the company’s new generation of MOSFETs that meet the higher power density, system efficiency and exceptional reliability requirements of the latest telecom, server, electric vehicle (EV) charger and solar products. The SuperFET III MOSFET family combines best-in-class reliability, low EMI, excellent […]

Filed Under: Featured, MOSFETS Tagged With: fairchild, fairchildsemiconductor, onsemiconductor

800-V MOSFETs incorporate ESD protection

September 8, 2016 By Aimee Kalnoskas Leave a Comment

Infineon Technologies AG introduces the 800 V CoolMOS™ P7 series. Based on the superjunction technology, this 800 V MOSFET combines best-in-class performance with exceptional ease-of-use. This new product family is a perfect fit for low power SMPS applications, fully addressing market needs in performance, ease of design, and price/performance ratio. It mainly focuses on flyback […]

Filed Under: MOSFETS Tagged With: infineon

N-channel MOSFET handles 100 V/160 A in automotive applications

September 8, 2016 By Aimee Kalnoskas Leave a Comment

Toshiba America Electronic Components, Inc. (TAEC) today announced the expansion of its lineup of automotive N-channel power MOSFETs with the addition of a new 100V, 160A device: the TK160F10N1L. Offering low on-resistance and a low voltage drive as well as a narrowed gate threshold voltage, the TK160F10N1L keeps current balances in parallel operation in large-current applications […]

Filed Under: MOSFETS, Transistors Tagged With: taec, toshiba

Power Electronics Resource Places GaN “At the Heart of Your System”

September 7, 2016 By Aimee Kalnoskas Leave a Comment

GaN Systems launches the electronics industry’s first online portal and newsroom solely focused on GaN power innovation – www.gannewsroom.com. Gannewsroom.com keeps the media and power design engineers up-to-date with respect to GaN innovations, and designing GaN transistors into electronic systems. Now power industry professionals have access to a central repository that contains press releases, videos, […]

Filed Under: MOSFETS, Power Supplies, Power Supply News Tagged With: gansystems

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