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MOSFETS

Better high-frequency power design through EM simulation

February 28, 2017 By Lee Teschler 1 Comment

pcb sim

Here’s how a 3D EM simulation can be used to accurately gauge gate-driver trace inductance. JOHN RICE | TEXAS INSTRUMENTS INC. HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) were first introduced in the early 1980s and are touted for their exceptional switching qualities. These so-called heterojunction, field effect transistors (FETs) were originally developed for high-frequency RF power […]

Filed Under: Featured, MOSFETS, Power Electronics Handbook Tagged With: CST Microwave Studio, efficientpowerconversioncorporation, GaN, LMG3410, texasinstrumentsinc

SiC MOSFETs handle 1.2 kV with 75 mΩ ON resistance

February 23, 2017 By Aimee Kalnoskas Leave a Comment

Wolfspeed has expanded its  C3M platform through the introduction of a 1200V, 75mΩ MOSFET in its recently released low-inductance discrete packaging. The new device simplifies designs and enables an increase in frequency while maintaining efficiency, lowering system cost, reducing circuit EMI, and enabling 99% efficiency levels in three-phase power factor correction circuits. These features enable designers of […]

Filed Under: MOSFETS Tagged With: wolfspeed

Automotive-compliant power ICs launching at Embedded World

February 17, 2017 By Aimee Kalnoskas Leave a Comment

Diodes Incorporated will be introducing a number of notable new products at Embedded World 2017 in Nuremberg, Germany, March 14-16. These include the industry’s first unidirectional 1800W automotive-compliant transient voltage suppressors; 40V and 60V dual, co-packaged enhancement mode MOSFETs that are also qualified for automotive applications; and, coming from its Pericom connectivity product line, the […]

Filed Under: MOSFETS, Power Components, Semiconductor, Transistors Tagged With: diodesincorporated

SiC gate driver optimized for 62mm modules

February 17, 2017 By Aimee Kalnoskas Leave a Comment

AgileSwitch, LLC introduces the 62EM (62mm Electrical Master) SiC MOSFET gate driver series. The easy-to-use, plug and play driver is compatible with most 62mm SiC MOSFET modules. Applications including heavy-duty traction vehicles, auxiliary power units in trains, buses and trolleys, induction heating systems and other high-power industrial systems are rapidly moving from IGBTs to SiC […]

Filed Under: MOSFETS Tagged With: agileswitch

More packaging options for motor drive power modules

January 30, 2017 By Aimee Kalnoskas Leave a Comment

STMicroelectronics has extended its SLLIMM nano series of Intelligent Power Modules (IPMs) for motor drives with more package options that help minimize overall size and complexity, extra integrated features, and greater efficiency leveraging the latest-generation 500V MOSFETs. With a current rating of 1A or 2A, the new IPMs target applications up to 100 Watts, such […]

Filed Under: MOSFETS, Power Supplies, Three-phase Tagged With: stmicro

eGaN FET and IC applications center to open in Virginia

January 27, 2017 By Lee Teschler Leave a Comment

Efficient Power Conversion Corp.(EPC), a supplier of eGaN FETs, says it will open an Applications Center in Blacksburg, Va. This center will support research and development for the applications of enhancement-mode gallium nitride transistors and ICs. GaN technology has enabled emerging applications such as wireless power transfer, LiDAR for autonomous vehicles, and envelope tracking for […]

Filed Under: MOSFETS Tagged With: efficientpowerconversioncorporation

Current Circuit: MOSFET bridge rectifier with low forward drop

January 20, 2017 By Aimee Kalnoskas Leave a Comment

by “Crutschow“, forum member on Electro-Tech-Online.com The lowest input to output voltage drop you can get with a standard bridge rectifier is nearly a volt through the two conducting diodes for each half cycle, even with Schottky diodes in the bridge. That can generate a dissipation of about a watt per amp of output current in […]

Filed Under: Featured, MOSFETS, Power Supplies

700-V MOSFETs target quasi resonant flyback topologies

January 18, 2017 By Aimee Kalnoskas Leave a Comment

Infineon Technologies AG  developed the new 700 V CoolMOS™ P7 family to serve today’s and tomorrow’s trends in quasi-resonant flyback topologies. These new MOSFETs offer unmatched performance improvements compared to currently used superjunction technologies. Soft switching topologies like smart phone and tablet chargers but also notebook adapters profit from this advantage. Additionally, the new CoolMOS supports fast […]

Filed Under: MOSFETS Tagged With: infineon

SiC MOSFETs deliver 196 A for EV drivetrain uses

January 11, 2017 By Aimee Kalnoskas Leave a Comment

Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has introduced a 900V, 10mΩ MOSFET rated for 196 A of continuous drain current at a case temperature of 25°C. This device enables the reduction of EV drive-train inverter losses by 78 percent based on EPA combined city/highway mileage standards. This efficiency […]

Filed Under: MOSFETS Tagged With: wolfspeed

Top power electronics threads on EDAboard.com – December

January 3, 2017 By Aimee Kalnoskas Leave a Comment

(editor’s note: Intrigued by these power electronics problems? Have a question or another solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the power electronics forum thread.) Designing adjustable voltage SMPS – I am planning to make an adjustable voltage SMPS. How do I […]

Filed Under: AC-DC, Controllers, Converters, DC-DC, Featured, Industry Experts, MOSFETS, Power Components, Power Management, Regulators, RF Power, Simulation

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