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MOSFETS

SiC components on display at PCIM 2016

May 4, 2016 By Andrew Zistler Leave a Comment

Wolfspeed, A Cree Company and a supplier of silicon carbide (SiC) power products — including best-in-class SiC MOSFETs, Schottky diodes, and modules — will showcase its latest SiC power devices at PCIM 2016 in Nuremberg, Germany from May 10 to 12. As Europe’s leading conference for power electronics technology and applications in intelligent motion, renewable […]

Filed Under: MOSFETS

Top power electronics threads on EDABoard.com – April

May 1, 2016 By Aimee Kalnoskas Leave a Comment

(editor’s note: Intrigued by the problem? Have a question or optional solution? Then click the “Read more” link and follow the conversation on EDAboard.com or log in to EDAboard and participate in the forum thread.) How can an offline LED driver last 20 years? – The Cu-Beam light is certainly the best LED light that the […]

Filed Under: Amplifier, DC-DC, LED Lighting, MOSFETS, Power Components, Power Supplies Tagged With: edaboard.com

Researchers ink nanocrystal FETs onto plastic substrate

April 26, 2016 By Lee Teschler Leave a Comment

plastic-substrate-containing-several-FETs

by Leland Teschler, Executive Editor A group at the University of Pennsylvania has patterned nanocrystal-based field effect transistors onto flexible plastic backings. The group used ordinary spin coating to create the FETs but say the devices could eventually be constructed by 3D printers. The researchers devised four different inks for the work: a conductor with […]

Filed Under: MOSFETS

Fully-qualified 650-V GaN FET boasts 41 mOhm R(on) in a TO-247 package

March 28, 2016 By Andrew Zistler Leave a Comment

Transphorm Inc. introduces the TPH3207WS GaN field effect transistor (FET) with the lowest on-resistance (41 mOhm) in a TO-247 package that reduces system volume as much as 50% without sacrificing efficiency. The device’s low Rds(on) and ultra-low Qrr (175nC) bring the benefits of GaN to applications that previously relied on silicon, enabling engineers to achieve […]

Filed Under: MOSFETS

Power MOSFETs reduce Rdson resistance

March 24, 2016 By Andrew Zistler Leave a Comment

Fairchild has launched the flagship device of the company’s newest generation of 100V N-channel power MOSFETs, the FDMS86181 100V Shielded Gate PowerTrench MOSFET. The FDMS86181 is the first part in Fairchild’s new generation of PowerTrench MOSFETs and it delivers substantial improvements in efficiency, reduced voltage ringing and lower electromagnetic interference (EMI) for power supplies, motor […]

Filed Under: MOSFETS Tagged With: fairchild

N-channel Power MOSFETs sport efficient thermal design

March 3, 2016 By Jennifer Calhoon Leave a Comment

STMth

The latest MDmesh™ DM2 N-channel Power MOSFET transistors from STMicroelectronics create new opportunities for power-supply designers to achieve greater efficiency in low-voltage power supplies for computers, telecom networks, industrial, and consumer devices. As people around the world acquire, store, and share a rapidly increasing amount of digital data such as e-books, videos, photographs, and music […]

Filed Under: MOSFETS Tagged With: stmicroeletronics

Multi-Phase 55-V Synchronous Boost Controllers Simplify target vehicular systems

March 1, 2016 By Andrew Zistler Leave a Comment

IntersilTH

Intersil Corporation has announced two new 55V two-phase synchronous boost controllers with integrated high-side and low-side MOSFET drivers. The ISL78227 and ISL78229 are the industry’s most robust and highly integrated boost controllers available to simplify the design of high power automotive applications. Operating from a 12V battery supply, these devices boost the output voltage to […]

Filed Under: MOSFETS Tagged With: intersil

How and when MOSFETs blow up

February 26, 2016 By Lee Teschler 13 Comments

by Majeed Ahmad High temperatures and operating conditions outside the safe operating area can sabotage MOSFETs used in switching circuits. The MOSFET (metal-oxide-semiconductor field-effect transistor) is a primary component in power conversion and switching circuits for such applications as motor drives and switch-mode power supplies (SMPSs). MOSFETs boast a high input gate resistance while the […]

Filed Under: MOSFETS, Power Electronics Handbook Tagged With: onsemiconductor

SiC MOSFETs power high-frequency battery chargers

February 12, 2016 By Andrew Zistler Leave a Comment

Wolfspeed, A Cree Company, announced today that Gruppo PBM, a leader in industrial battery chargers, is using Wolfspeed SiC MOSFETs in its new HF9 battery charger family to enable higher efficiency and power density at a lower overall system cost. Demand for safe, efficient, and fast-charging industrial batteries has increased exponentially along with the proliferation […]

Filed Under: MOSFETS Tagged With: wolfspeed

New 650V Ultra Junction X2-Class Power MOSFETs with Fast Body Diodes

February 10, 2016 By Andrew Zistler Leave a Comment

rectifier diode

IXYS Corporation (NASDAQ: IXYS), a global manufacturer of power semiconductors and integrated circuits (ICs) for energy efficiency, power management, transportation, medical, and motor control applications, has announced an expansion of its Ultra Junction Power MOSFET product line: 650V X2-Class Power MOSFETs with fast body diodes. With on-resistance as low as 17 milliohms and current ratings […]

Filed Under: MOSFETS Tagged With: ixyscorporation

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