Transphorm Inc. introduces the TPH3207WS GaN field effect transistor (FET) with the lowest on-resistance (41 mOhm) in a TO-247 package that reduces system volume as much as 50% without sacrificing efficiency. The device’s low Rds(on) and ultra-low Qrr (175nC) bring the benefits of GaN to applications that previously relied on silicon, enabling engineers to achieve […]
MOSFETS
Power MOSFETs reduce Rdson resistance
Fairchild has launched the flagship device of the company’s newest generation of 100V N-channel power MOSFETs, the FDMS86181 100V Shielded Gate PowerTrench MOSFET. The FDMS86181 is the first part in Fairchild’s new generation of PowerTrench MOSFETs and it delivers substantial improvements in efficiency, reduced voltage ringing and lower electromagnetic interference (EMI) for power supplies, motor […]
N-channel Power MOSFETs sport efficient thermal design
The latest MDmesh™ DM2 N-channel Power MOSFET transistors from STMicroelectronics create new opportunities for power-supply designers to achieve greater efficiency in low-voltage power supplies for computers, telecom networks, industrial, and consumer devices. As people around the world acquire, store, and share a rapidly increasing amount of digital data such as e-books, videos, photographs, and music […]
Multi-Phase 55-V Synchronous Boost Controllers Simplify target vehicular systems
Intersil Corporation has announced two new 55V two-phase synchronous boost controllers with integrated high-side and low-side MOSFET drivers. The ISL78227 and ISL78229 are the industry’s most robust and highly integrated boost controllers available to simplify the design of high power automotive applications. Operating from a 12V battery supply, these devices boost the output voltage to […]
How and when MOSFETs blow up
by Majeed Ahmad High temperatures and operating conditions outside the safe operating area can sabotage MOSFETs used in switching circuits. The MOSFET (metal-oxide-semiconductor field-effect transistor) is a primary component in power conversion and switching circuits for such applications as motor drives and switch-mode power supplies (SMPSs). MOSFETs boast a high input gate resistance while the […]
SiC MOSFETs power high-frequency battery chargers
Wolfspeed, A Cree Company, announced today that Gruppo PBM, a leader in industrial battery chargers, is using Wolfspeed SiC MOSFETs in its new HF9 battery charger family to enable higher efficiency and power density at a lower overall system cost. Demand for safe, efficient, and fast-charging industrial batteries has increased exponentially along with the proliferation […]
New 650V Ultra Junction X2-Class Power MOSFETs with Fast Body Diodes
IXYS Corporation (NASDAQ: IXYS), a global manufacturer of power semiconductors and integrated circuits (ICs) for energy efficiency, power management, transportation, medical, and motor control applications, has announced an expansion of its Ultra Junction Power MOSFET product line: 650V X2-Class Power MOSFETs with fast body diodes. With on-resistance as low as 17 milliohms and current ratings […]
Top power electronics threads on EDAboard.com – December
High voltage input cascaded input converter – We have to do a non-isolated SMPS for vin=120v to 400v, and vout = 100v, pout=300w. There is a “known” way to do this involving two cascaded synchronous buck stages. Do you know more detail of this “known” method? Read more Designing a charge controller for hybrid system – I […]
Teardown: 60-W-equivalent LED bulbs
by LELAND TESCHLER, Executive Editor Surprise: A look inside five LED bulbs designed to replace 60-W incandescents reveals design regimes ranging from dead simple to startlingly sophisticated. The average consumer might think that when it comes to light bulbs, one is about the same as another. This view might have been accurate back when every […]
Better converter efficiency with eGaN FETs
by Alex Lidow and David Reusch, Efficient Power Conversion Corp. Gallium-nitride FET technology has improved markedly in the past five years. Power converters based on GaN FETs are living up to the promise of low power losses at an economical price. Enhancement-mode gallium-nitride (eGaN) FETs can switch at speeds ten times faster than the best […]
