Infineon Technologies AG announces the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS(on) of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET. The device prevents damage to the load by limiting the high inrush current and ensures minimal losses […]
MOSFETS
Mitigate reverse recovery overshoot in MOSFET body diodes
Because of their compact size, higher efficiency, and superior performance in high-power applications, SiC MOSFETs are now replacing Si devices in switching applications. SiC devices enable faster switching times, significantly reducing switching losses. These advantages stem from the unique electrical and material properties of SiC-based devices — snappy reverse recovery inherent to the structure of […]
IGBT and MOSFET drivers provide 4 A in 200 nsec
Vishay Intertechnology, Inc. introduced two new IGBT and MOSFET drivers in the compact, high isolation stretched SO-6 package. Delivering high peak output currents of 3 A and 4 A, respectively, the Vishay Semiconductors VOFD341A and VOFD343A offer high operating temperatures to +125 °C and low propagation delay of 200 ns maximum. Consisting of an AlGaAs LED optically coupled to an […]
Bipolar junction transistors show their muscle
Recent enhancements to the classic BJT show that the classic transistor has plenty of life left and can challenge SiC and GaN devices in some power applications. Amidst the advances in CMOS and wide bandgap semiconductor technology, you can easily forget that the first transistor invented by William Shockley in 1949 was a bipolar junction […]
High-side gate driver protects battery-powered tools from faults
Infineon Technologies AG has now introduced the EiceDRIVER 1EDL8011, a high-side gate driver designed to protect battery-powered applications such as cordless power tools, robotics, e-bikes, and vacuum cleaners in the event of a fault. The device provides fast turn-on and turn-off of high-side N-channel MOSFETs with its high gate current capabilities. It consists of an […]
30 V MOSFET reduces on resistance by 40%
Infineon Technologies AG has introduced its new StrongIRFET 2 power MOSFET 30 V portfolio, expanding the existing StrongIRFET 2 family to address the growing demand for 30 V solutions in the mass market segment. Optimized for high robustness and ease of use, the new power MOSFETs were specifically designed to meet the requirements of a […]
DFN package MOSFETs feature side-wettable flanks
Nexperia announced the release of single and dual small-signal MOSFETs in miniature DFN packages. The automotive-qualified devices are available in DFN1110D-3 and DFN1412-6 respectively. Particularly the DFN1110D-3 (1.1mm x 1 mm) package has seen increasingly wide adoption and is quickly becoming the ‘de-facto’ industry standard package for small-signal MOSFETs and bipolar transistors intended for use […]
40 V automotive MOSFETs offer 75 percent weight reduction
Magnachip Semiconductor Corporation announced the release of four new 40V 1)MXT MV MOSFETs designed in Power Dual Flat No-Lead (PDFN) 33 packages for automotive applications. As automotive technologies like autonomous driving and infotainment systems advance, the number and variety of motors installed in vehicles are increasing. Consequently, there is a growing importance for high-performance MOSFETs […]
5 A MOSFET gate drivers spin motors and drive power supplies
Littelfuse, Inc. announces the launch of the IX4341 and IX4342 dual 5 ampere low-side MOSFET gate drivers. These gate drivers are specifically designed for driving MOSFETs and complete the existing IX434x driver series by adding the remaining two logic input versions. The IX434x series now consists of dual non-inverting, dual inverting, and non-inverting and inverting input […]
How do SiC and GaN devices age?
By Peter Friedrichs, Infineon Technologies SiC and GaN devices operate at higher stress levels than silicon devices. The semiconductor and automotive industries have strict qualification tests for that. Silicon carbide (SiC) and gallium nitride (GaN) wide bandgap (WBG) technologies are well known for their performance advantages over silicon (Si) in many high-power areas, including their […]
