NXP Semiconductors today introduced an innovative 15W wireless charging solution, qualified to meet stringent automotive and industrial grade requirements. Compatible with WPC Qi and PMA charging standards, this complete solution allows automakers to easily transition from 5W to 15W capabilities, giving drivers a faster in-vehicle charging experience for mobile phones, tablets, and wearables. The new […]
Semiconductor
Power management IC boasts ultra-low-power boost converter for high efficiency
Following its arrival on the power semiconductor scene earlier this year, e-peas today announces commercial availability of its first IC. The AEM10940 utilizes the company’s unique proprietary energy management technology in order to maximize the efficiency with which electronic hardware draws energy from the ambient environment. This device, which is now in full scale production, […]
0805 single-chip TVS devices deliver <0.2ns transient response
AVX Corporation has added new 26VDC components to its proven, dual-function TransFeed™ and TransFeed Automotive Series varistors, extending the series’ superlative EMI/RFI filtering and bi-directional ESD protection capabilities to an even broader range of applications, including: automobiles, power supplies, computers, medical instruments, smartphones, multimedia add-on cards, barcode scanners, remote terminals, transceivers, and test equipment. TransFeed […]
80-A SCRs help miniaturize power modules
STMicroelectronics has introduced the industry’s first 800V surface-mount Silicon Controlled Rectifiers (SCR, or thyristor) specified for operation at temperatures up to 150°C without derating, giving freedom to miniaturize power modules for applications that demand high reliability in harsh conditions. With its 80A current rating, the new TM8050H-8 SCR, housed in the High-Voltage D3PAK (TO-268-HV), enables […]
GaN power FETs combine with analog drivers in 650-V half-bridge design
Dialog Semiconductor plc, a provider of highly integrated power management, AC/DC power conversion, solid state lighting (SSL) and Bluetooth® low energy technology, today announced and is demonstrating its first gallium nitride (GaN) power IC product offering, using Taiwan Semiconductor Manufacturing Corporation’s (TSMCs) 650 Volt GaN-on-Silicon process technology. The DA8801 together with Dialog’s patented digital Rapid Charge™ […]
Low-capacitance TVS diode Arrays work as common-mode filters
Littelfuse has introduced a series of low capacitance TVS Diode Arrays optimized for protecting electronic equipment that may experience destructive electrostatic discharges (ESDs). SP814x Series TVS Diode Arrays (SPA® Diodes) integrate four or six channels of ultra-low-capacitance rail-to-rail diodes and an additional zener diode to safely absorb repetitive ESD strikes above the maximum level specified […]
GaN FET driver operates up to 33 MHz and handles voltages up to 80V
Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the word’s fastest gallium nitride (GaN) field-effect transistor (FET) driver, the UltraCMOS PE29100. Built on Peregrine’s UltraCMOS technology, this new GaN driver empowers design engineers to extract the full performance and speed advantages from GaN transistors. Designed to […]
SiC MOSFETs feature 1.7 kV breakdown voltage
ROHM has recently announced the availability of a new 1700V SiC MOSFET optimized for industrial applications, including manufacturing equipment and high-voltage general-purpose inverters. In recent years, the growing trend to conserve energy in all areas has increased the demand for energy-saving power semiconductors, particularly for applications in the industrial sector such as general-purpose inverters and […]
SiC Schottky Diodes handle 1.2 kV with little leakage current
Littelfuse, a global designer in circuit protection, introduced the latest addition to its growing line of power semiconductor products, the LFUSCD Series of Silicon Carbide (SiC) Schottky Diodes, at the European Power Conversion and Intelligent Motion 2016 exhibition in Nuremberg, Germany. When compared to standard silicon bipolar power diodes, LFUSCD Series SiC Schottky diodes allow designers to reduce […]
High-Speed Fuses reduce peak let-through current and let-through energy
Littelfuse, Inc. has announced a new line of high-speed fuses for protection of power semiconductor devices used in industrial equipment. The POWR-SPEED line of fuses uses a special bridge design, quenching material and element designs to provide fast, extreme current limitation. Manufacturing systems today use power semiconductor devices to control drives and optimize power utilization. […]
