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Semiconductor

GaN power semis boast 120mΩ max RDS(on), at 15A max current capability

December 15, 2021 By Redding Traiger Leave a Comment

STMicroelectronics has revealed a new family of GaN power semiconductors in the STPOWER portfolio that can significantly reduce energy use and enable slimmer designs in a huge variety of electronic products. Target applications include consumer equipment such as chargers, external power adapters for PCs, LED-lighting drivers, and power supplies inside televisions and home appliances. This equipment […]

Filed Under: Automotive, Consumer electronics, Development Tools, Industrial, LED Lighting, Power Management, Semiconductor, Transistors Tagged With: stmicroeletronics

The evolution of smart MOSFET technologies

October 14, 2021 By Ashita Mirchandani, Bastian Lang Leave a Comment

A review of MOSFET advances helps predict where the technology is likely to head. Ashita Mirchandani, Bastian Lang • Infineon Technologies The past 50 years have seen unprecedented changes enabled by technology. The trend will continue with emerging technologies such as e-mobility, the Internet of Things (IoT), artificial intelligence, connectivity and 5G. At the heart […]

Filed Under: FAQ, Featured, Semiconductor, Transistors Tagged With: FAQ, infineontechnologies

SiC power FETs boast super-low 6-mΩ RDS(on)

September 14, 2021 By Lee Teschler Leave a Comment

UnitedSiC

At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are available in the […]

Filed Under: MOSFETS, Power Components, Semiconductor, Transistors Tagged With: unitedsic

JEDEC publishes new test method for continuous-switching evaluation of GaN devices

January 27, 2021 By Aimee Kalnoskas Leave a Comment

wide bandgap power

 JEDEC Solid State Technology Association announces the publication of JEP182: Test Method for Continuous-Switching Evaluation of Gallium Nitride Power Conversion Devices. Developed by JEDEC’s JC-70 Committee for Wide Bandgap Power Electronic Conversion Semiconductors, JEP182 is available for free download from the JEDEC website. To enable the successful adoption of GaN power transistors, both reliable operation in power […]

Filed Under: Power Components, Semiconductor

Automotive 40/60-V MOSFETs are AEC-Q101 qualified

December 3, 2020 By Lee Teschler Leave a Comment

taiwan semi

The TQM Family of single and dual N-channel automotive-grade power MOSFETs are offered with drain-to-source breakdown voltage (BVDSS) of either 40 or 60 V. All of the 14 parts in this AEC-Q101 family feature a maximum operating temperature (Tj) of 175° C. And unlike many other products in this class, all are 100% tested for […]

Filed Under: Automotive, Power Components, Semiconductor Tagged With: taiwansemiconductorcoltd

650 V automotive GaN FETs integrate 2.2. MHz gate driver, reduce onboard charger size

November 9, 2020 By Aimee Kalnoskas Leave a Comment

Vehicle electrification is transforming the automotive industry, and consumers are increasingly demanding vehicles that can charge faster and drive farther. As a result, engineers are being challenged to design compact, lightweight automotive systems without compromising vehicle performance. Texas Instruments’ new LMG3522R030-Q1 and LMG3525R030-Q1 650-V automotive GaN FETs for automotive and industrial applications are designed to […]

Filed Under: Power Components, Semiconductor, Transistors Tagged With: texasinstrumentsinc

n-channel MOSFET saves space, increases power density

September 28, 2020 By Redding Traiger Leave a Comment

SiSS94DN

Vishay Intertechnology, Inc. introduced a new 200 V n-channel MOSFET that offers industry-low typical on-resistance of 61 mΩ at 10 V in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, in addition to improved on-resistance times gate charge — a critical figure of merit (FOM) for MOSFETs used in switching applications — […]

Filed Under: DC-DC, LED Lighting, MOSFETS, Semiconductor, Transistors Tagged With: vishayintertechnology

High-voltage switcher ICs now certified for automotive use

July 1, 2020 By Aimee Kalnoskas Leave a Comment

LinkSwitch-TN2 switcher IC

Power Integrations announced an AEC-Q100-qualified version of its LinkSwitch-TN2 switcher IC for buck or non-isolated flyback applications. Featuring an integrated 750 V MOSFET, the new automotive-qualified LinkSwitch-TN2 IC provides simple and reliable power for EV sub-systems connected to the high-voltage bus, including HVAC, climate control, battery management, battery heater, DC-DC converter and on-board charger systems. The […]

Filed Under: Power Components, Power Management, Semiconductor Tagged With: powerintegrationsinc

Super-accurate 400-kHz current sensor carries 5-kV isolation rating

June 24, 2020 By Aimee Kalnoskas Leave a Comment

ACS37002 current sensor

Allegro Microsystems announced the launch of the ACS37002 family of advanced Hall-effect current sensors. The ACS37002 has 400kHz sensing bandwidth up to 180 A with low offset and better than 1% typical total accuracy over the full -40°C to 150°C automotive temperature range. The high-speed operation allows customers to operate at higher switching frequencies and […]

Filed Under: Power Components, Semiconductor Tagged With: allegromicrosystems

Hybrid semiconductor technology replaces MOV devices for AC circuit protection

June 15, 2020 By Aimee Kalnoskas Leave a Comment

PHYTVSxxxV3 series

ProTek Devices has introduced a new patent-pending series of hybrid semiconductor components for AC power supply circuit protection in consumer and industrial applications like home appliances, industrial equipment automation controls, instrumentation, and SMART meters. The new semiconductor technology is an ideal replacement for surface mount metal oxide varistor (MOV) devices. The PHYTVSxxxV3 series is designed […]

Filed Under: Semiconductor Tagged With: protekdevices

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