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Semiconductor

X-capacitor discharge ICs help designs meet IEC60335 specs

August 21, 2019 By Aimee Kalnoskas

CAPZero-3 discharge ICs

Power Integrations announced CAPZero-3, the latest generation of the company’s energy-saving X-capacitor discharge ICs. Two-terminal CAPZero-3 ICs enable designers to easily meet IEC60335 safety approvals for major appliances, and cover all capacitor values from 100 nF to 6 µF. IEC60335 is the discharge safety standard for all appliances. To protect the user from an electrical hazard, […]

Filed Under: Power Components, Semiconductor Tagged With: powerintegrationsinc

Transphorm to produce first commercialized nitrogen polar GaN for RD/mm-wave for DoD/5G

July 31, 2019 By Aimee Kalnoskas

nitrogen polar GaN

Transphorm Inc. today announced that the U.S. Department of Defense (DoD) Office of Naval Research (ONR) has exercised a three-year $15.9 million option on an existing $2.6 million base contract with the company. This contract, N68335-19-C-0107, administered by Naval Air Warfare Center Aircraft Division, Lakehurst establishes Transphorm as a U.S.-based dedicated production source and supplier […]

Filed Under: 5G, Power Supply News, Semiconductor Tagged With: transphorm

Power Electronics Top Talks in June 2019 on EDABoard.com

July 1, 2019 By Aimee Kalnoskas

power electronics june

Peer-to-peer, engineer-to-engineer questions and answers from the EDABoard.com engineering community around power electronics. Click the “Read more” link and follow the entire conversation and maybe add your two cents by logging in to EDAboard.com 24V to 5V buck converter – I want to design a simple buck converter that converts a 24V input to a […]

Filed Under: Controllers, DC-DC, Featured, MOSFETS, Power Components, Power Management, Power Supplies, Semiconductor, Transistors Tagged With: edaboardcom

GaN process supports mmWave and 5G power applications

June 3, 2019 By Aimee Kalnoskas

NP15-00 GaN process

WIN Semiconductors Corp has expanded its gallium nitride (GaN) portfolio with the commercial release of a 0.15μm-gate technology, NP15-00 Gan process, that supports emerging mmWave PA applications including radar, satellite communications, and 5G massive MIMO infrastructure. The NP15-00 GaN process technology supports full MMICs enabling WIN customers to design compact, linear or saturated high power […]

Filed Under: 5G, Amplifier, Power Components, Semiconductor Tagged With: winsystems

Why it’s tough to characterize SiC power MOSFETs

May 29, 2019 By Lee Teschler

littelfuse

Switching transients and parasitics can combine to thwart the accurate measurement of important MOSFET operating parameters. Levi Gant, Xuning Zhang, Ph.D., Littelfuse, Inc. Silicon carbide (SiC) power MOSFETs get a lot of attention because they can switch fast while maintaining high blocking voltages. But their superior switching qualities also have potential drawbacks. Parasitic inductances caused […]

Filed Under: FAQ, Featured, MOSFETS, Power Components, Semiconductor, Transistors Tagged With: FAQ, littelfuse

Specialized diodes, Part 1: Tunnel, Zener/Avalanche, and Schottky diodes

May 17, 2019 By Bill Schweber

specialized diodes

There are diode varieties which do much more than just block current flow in one direction and allow it in the other; some of these special diodes have favorable attributes while others are essential in modern electronics. Every electronic engineer is familiar with the diode: it’s a basic, widely used, two-terminal semiconductor device. The diode’s […]

Filed Under: cooling fans, FAQ, Featured, Semiconductor Tagged With: FAQ, microchiptechnologyinc, microsemicorporation

Economical 200-A current sensors work up to 5 kHz

May 15, 2019 By Aimee Kalnoskas

DC200IF

Danisense announced the DC200IF, a highly accurate, highly-stable 200A current transducer targeting system integration OEM applications, that is around 40% lower cost than competing models. This enables users to access Danisense’s unique, double-core, balanced flux gate measurement technology, at a very affordable price/performance ratio. The DC200IF boasts excellent linearity (6 ppm) with a maximum offset of […]

Filed Under: Power Components, Semiconductor Tagged With: danisense

100-V GaN power transistors target uses in 48-V dc-dc converters

March 15, 2019 By Lee Teschler

The EPC2052 is a 100-V GaN transistor with a maximum RDS(on) of 13.5 mΩ and a 74-A pulsed output current for high-efficiency power conversion in a tiny 2.25-mm2 footprint. Applications demanding higher efficiency and power density no longer have to choose between size and performance. The EPC2052 measures just 1.50×1.50 mm (2.25 mm2). Despite the […]

Filed Under: Power Components, Semiconductor, Transistors Tagged With: efficientpowerconversion

GaN power transistors cover 3.5-A to 11-A range

March 5, 2019 By Lee Teschler

GaN Systems GS-065

The GS-065 low current (3.5 A to 11 A) transistor line, developed for sub-1k W power applications, is targeted for consumer level power supply products such as ac adapters for gaming and workstation laptops, TV power, LED lighting, wireless power systems, and appliance motor drives. This new transistor line leverages GaN Systems’ technology leadership in […]

Filed Under: Power Components, Semiconductor Tagged With: gansystemsinc

High-accuracy, wide bandwidth current sensors optimized for power supply, industrial uses

February 13, 2019 By Aimee Kalnoskas

MCx1101 current sensors

ACEINNA announced its new MCx1101 family of ±5A, ±20A, and ±50A current sensors for industrial and power supply applications. The first high accuracy wide bandwidth AMR-based current sensors on the market, units and evaluation boards are available now for sampling and volume shipments. The MCx1101 are fully integrated, bi-directional current sensors that offer much higher DC accuracy and […]

Filed Under: Power Components, Semiconductor Tagged With: aceinna

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Featured Contributions

Robust design for Variable Frequency Drives and starters

Meeting demand for hidden wearables via Schottky rectifiers

The case for vehicle 48 V power systems

GaN reliability milestones break through the silicon ceiling

Developing power architecture to support autonomous transportation

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