The International Workshop on Integrated Power Packaging announces IWIPP 2019, to be held in Toulouse, France, April 24-26, 2019. IWIPP, utilizing focused technical tutorials and a series of in-depth technical sessions aims to foster and facilitate disruptive change in the development of power packaging technologies required to help realize the performance entitlements of wide bandgap […]
Semiconductor
APEC 2019 sessions address “Coming of Age” of wide bandgap power semiconductors
The Power Sources Manufacturers Association (PSMA) Semiconductor Committee is sponsoring a series of three Industry Sessions at APEC 2019 that address the rapid emergence of wide bandgap semiconductors as a significant power conversion technology. The sessions will take place on Tuesday, Wednesday and Thursday, March 19-21, 2019, in the Anaheim Convention Center. Taken as a […]
Beefy 60-mm thyristor/diode modules now carry pressure contact technology
Infineon Technologies Bipolar GmbH & Co. KG has redesigned the product portfolio of 60 mm thyristor/diode modules with pressure contact technology. The new Eco Block family addresses the demand for cost-efficient larger modules for battery chargers, static and bypass switches and windmills. Additionally, the modules are a perfect fit for soft starters as well as rectifiers […]
Power Electronics Top Talks in December on EDABoard.com forums
Peer-to-peer, engineer-to-engineer questions and answers from the EDABoard.com engineering community around power electronics. Click the “Read more” link and follow the entire conversation and maybe add your two cents by logging in to EDAboard.com Favorite low phase shift 240Vrms detector – I have a requirement for a very low phase shift, galvanically isolated, zero cross detector […]
Third-gen 0.18-u Bipolar-CMOS-DMOS process technology excels at driver, charger, dc-dc conversion IC fab
MagnaChip Semiconductor Corporation announced it now offers foundry customers its third generation 0.18 micron Bipolar-CMOS-DMOS (BCD) process technology. The technology is highly suitable for PMIC, DC-DC converters, battery charger ICs, protection ICs, motor driver ICs, LED driver ICs and audio amplifiers. The third generation 0.18 micron BCD process technology offers improved specific on-resistance (Rsp) of power LDMOS […]
Tiny contactless current sensor minimizes power loss
ROHM announced the availability of the industry’s smallest contactless current sensor, the BM14270MUV-LB. It achieves minimum power loss (no heat generation) in an ultra-compact size, making it ideal for industrial equipment and consumer devices that detect operating conditions via current, including battery-driven drones, solar power systems, and servers in data centers requiring high power. In recent years, […]
Transphorm’s ships 250K GaN FETs, shows field failure data
Transphorm Inc. disclosed that it has shipped more than 250 thousand high voltage GaN FETs. Used in customers’ mass production applications, the devices are manufactured by the company in its Aizu, Japan, wafer foundry. Transphorm also stated that its wafer-foundry’s annual installed capacity base of 15 million parts of its popular 50 mohm product equivalent […]
Power SIP relay rated for up to 1A DC/1Arms continuous current load
IXYS Integrated Circuits Division, now part of Littelfuse, Inc., hasintroduced the CPC1984Y, a 600V, Normally Open Power SIP Relay, rated for up to 1A DC/1Arms continuous load current, twice the load current of the company’s most popular power relay. This high-reliability device uses optically coupled MOSFET technology to provide 4000Vrms of input-to-output isolation. In fact, […]
GaN Systems to demonstrate size, weight, power, and system cost benefits of GaN at electronica 2018
GaN Systems will show visitors how customers are achieving higher levels of performance in power electronics at electronica 2018 taking place in Munich on November 13-16. The company will share key observations and insights on the automotive sector and showcase its latest solutions and design tools at the GaN Systems booth located in Hall B5, Booth 430. […]
eGaN power transistor hits 97% efficiency at 500 kHz
The EPC2051 is a 100-V GaN transistor with a maximum RDS(on) of 25 mΩ and a 37-A pulsed output current for high efficiency power conversion in a tiny 1.1-mm2 footprint. Applications demanding higher efficiency and power density no longer have to choose between size and performance. The EPC2051 measures just 1.30×0.85 mm (1.1 mm2). Despite the small footprint, […]
