Onsemi conductor has introduced a new generation of vertical gallium nitride (vGaN) devices featuring GaN-on-GaN architecture and designed to enhance power density, efficiency, and reliability in high-performance applications. Unlike lateral GaN structures built on silicon or sapphire substrates, the vertical configuration conducts current through the semiconductor material itself, enabling operation at higher voltages and switching […]
Switches
Liquid-cooled switch delivers 102.4 Tbps switching capacity per chip
Alpha Networks Inc. announced the launch of its 1.6T liquid-cooled switch equipped with the Broadcom Tomahawk 6 chip to deliver up to 102.4 Tbps of switching capacity. Designed for AI/cloud data center and high-performance computing (HPC) applications, the product addresses high-speed connectivity requirements for generative AI, large-scale multimedia streaming, and Internet-of-Things deployments through a direct […]
Sink, source switches protect USB-C power components
Alpha and Omega Semiconductor Limited announced two powerful Type-C sink and source protection switches. AOS designed these switches to increase the power delivery capability of USB Type-C ports to 240W, paving the way for Type-C extended power range (EPR) implementations. The AOZ13058DI offers overvoltage/overcurrent protection features suited for 48V Type-C sinking applications, while the AOZ15953DI provides the additional protection features […]
How do parasitic inductances affect switching performance?
Parasitic inductance is an often-overlooked factor in power electronics circuits. This FAQ examines how stray inductances in components and PCB layouts create voltage overshoots, electromagnetic interference, and efficiency losses in switching applications. Parasitic inductance is an unintentional and unavoidable characteristic of all electronic parts and their connections that reduces how well power electronics circuits switch. […]
Why is a gate driver essential for high-performance power switching?
Gate drivers are essential for wide-bandgap semiconductors like SiC MOSFETs and GaN HEMTs. These devices are better than regular Si devices in many ways. These advanced devices have faster switching speeds and operate at higher frequencies, necessitating optimized gate drive circuitry. This FAQ will cover three aspects of an essential gate driver, namely, crosstalk minimization, […]
Tab terminal relay delivers 20 A at 800 VDC with 0.9 W power consumption
FCL Components America, Inc., has released the FTR-E1J 20A, a tab terminal-type high voltage DC switching relay, based on its FTR-E1 series. It is screw mounted and does not use printed circuit boards. This new relay delivers 20A 800 VDC, 10A 1,000VDC higher voltage switching with no specific polarity requirements for the connection of load […]
GaN switch delivers bidirectional voltage blocking in single device
Infineon Technologies AG is introducing the CoolGaN bidirectional switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions. Featuring a common-drain design and a double-gate structure, it leverages Infineon’s robust gate injection transistor (GIT) technology to deliver a monolithic bidirectional switch, enabled by Infineon’s CoolGaN […]
Reference designs support 800 V automotive applications with 17 00V SiC switching
A series of new reference designs featuring a 1700 V-rated silicon carbide (SiC) integrated flyback switcher IC for use in electric vehicles operating at 800 V has been developed. These designs address multiple auxiliary power requirements, including DC-DC bus conversion, emergency power for inverters, battery management systems, and other auxiliary loads. Output power levels range […]
Silicon carbide JFETs feature 2.3 mΩ resistance for 1200 V applications
Infineon Technologies AG is expanding its silicon carbide (SiC) portfolio with the new CoolSiC JFET product family. The new devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them ideal for advanced solid-state protection and distribution. With robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC JFETs enable […]
48 V switches feature ±5% current sense accuracy
As vehicle architectures transition to hybrid and electric models, conventional battery systems are increasingly being supplemented or replaced by 48 V power sources. This shift is expected to become the new standard for future electric vehicles, as 12 V and 24 V power net systems reach their limits. 48 V systems enable advanced features, enhance […]
