Magnachip Semiconductor Corporation announced that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs) consisting of nine distinct products featuring proprietary design technology. Magnachip’s proprietary design provides a specific on-resistance (RSP) reduction of about 10%, and this result was achieved while maintaining the same cell […]
Transistors
How much can GaN improve sustainability and reduce CO2 emissions?
Gallium nitride (GaN) power semiconductors are about less — less CO2 emission from device fabrication, less materials in the devices and power converters using GaN, less cost due to higher frequency operation and smaller passive components, and less thermal dissipation due to higher efficiencies. Those performance factors combine to improve the sustainability of power converters […]
How multilevel converters and SiC can improve sustainability
Modular multilevel converters (MMCs) are an advanced form of a voltage source converter. They are emerging as the preferred choice in medium- and high-voltage green energy applications like high-voltage DC (HVDC) transmission systems, medium voltage motor drives including electric vehicles (EVs), wind and solar renewable energy systems, battery energy storage systems (BESS), and EV chargers […]
1200 V IGBTs for high-power infrastructure applications
onsemi announced a new range of ultra-efficient 1200 V insulated-gate bipolar transistors (IGBTs) that minimize conduction and switching losses at a performance level that is industry-leading in the market. Intended to enhance efficiency in fast switching applications, the new devices will be primarily used in energy infrastructure applications like solar inverters, uninterruptible power supplies (UPS), […]
Gate drivers design drives high-voltage power devices for TVs
Renesas Electronics Corporation announced a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for electric vehicle (EV) inverters. Gate driver ICs are essential components to EV inverters, providing an interface between the inverter control MCU and the IGBTs […]
UV-C LEDs now available in TO-can packages
Silanna UV announces the release of two new products in its SF1 235nm and SN3 255nm series of UV-C LEDs: the SF1-3T9B5L1 and the SN3-5T9B5L1. Silanna UV’s new UV-C LEDs feature the Transistor Outline (TO-can) package format, which consists of a header and a cap that together form a hermetically sealed package. This innovative design […]
MOSFETS target EV motor, battery management apps
Magnachip Semiconductor Corporation announced that the company had launched its eighth-generation 150V MXT Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)1 optimized for Light Electric Vehicle (LEV) motor controllers and battery management systems (BMSs). Energy efficiency plays a critical role in electric devices regarding power consumption and product stability. This newly-released MOSFET (MDT15N054PTRH) features Magnachip’s eighth-generation trench MOSFET technology […]
AEC-Q101 qualified GaN FETs target 48-12 V dc/dc conversion, infotainment, LiDAR apps
Efficient Power Conversion Corporation expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 […]
650 V GaN HEMTs now offered with 80mΩ RDS(on)
Innoscience Technology announced a new low RDS(on) 650V E-mode GaN HEMT devices. INN650D080BS power transistors have an on-resistance of 80mΩ (60mΩ typical) in a standard 8×8 DFN package, enabling higher power applications, for example in totem pole LLC architectures or fast battery chargers. Thanks to Innoscience’s innovative strain enhancement layer, InnoGaN devices feature low specific RDS(ON) as […]
Selecting a gate driver for ASIL-certified systems
Several safety features now found in gate driver integrated circuits make it easier for automotive system designs to get ASIL certification. David Divins • Infineon Technologies The Automotive Safety Integrity Level (ASIL) is a risk classification system defined by the ISO 26262 standard for the functional safety of road vehicles. There are four ASIL safety […]
