SkyWater Technology and Applied Novel Devices, Inc. announced a major industry breakthrough with new transistor technology that offers significant benefits for fast switching power conversion applications. The power MOSFETs offer 2x lower output charge, near-zero reverse-recovery, and ultra-low Qoss enabled by AND’s proprietary channel engineering technology. In addition, these power MOSFETs offer superior specific on-resistance […]
Transistors
Dedicated 8-inch, GaN-on-Si FET producer opens locations in US and Europe
Innoscience Technology who focuses on creating a global energy ecosystem based on high-performance, low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions, today announced the official launch of its international operations in the USA and Europe. Headquartered in Suzhou, China, Innoscience is now poised to support customers through the addition of design and sales support facilities in Santa Clara, […]
GaN power semis boast 120mΩ max RDS(on), at 15A max current capability
STMicroelectronics has revealed a new family of GaN power semiconductors in the STPOWER portfolio that can significantly reduce energy use and enable slimmer designs in a huge variety of electronic products. Target applications include consumer equipment such as chargers, external power adapters for PCs, LED-lighting drivers, and power supplies inside televisions and home appliances. This equipment […]
Bidirectional 48-12-V two-phase converter demo board targets mild-hybrid vehicle apps
EPC announces the availability of the EPC9163, a 2 kW, two-phase 48 V – 12 V bidirectional converter that operates with 96.5 % efficiency in a very small footprint. The design of this demonstration board is scalable; that is, two converters can be paralleled to achieve 4 kW or three converters can be paralleled to […]
40-V, 1.3-milliohm eGaN FETs optimized for high power density apps
Efficient Power Conversion Corporation expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2067 (1.3 mΩ typical, 40 V) eGaN FET. The EPC2067 is ideal for applications with demanding requirements for high power density performance including 48 V – 54 V input servers. Lower gate charges and zero reverse […]
Texas Instruments wins coveted LEAP Award in power electronics
The first 650-V automotive GaN FET with an integrated driver, protection and active power management today earned its inventor, Texas Instruments, a 2021 LEAP Award. More than 100 entries were received for the annual competition which celebrates the most innovative and forward-thinking products serving the design engineering space. This year’s winners were chosen by an […]
The evolution of smart MOSFET technologies
A review of MOSFET advances helps predict where the technology is likely to head. Ashita Mirchandani, Bastian Lang • Infineon Technologies The past 50 years have seen unprecedented changes enabled by technology. The trend will continue with emerging technologies such as e-mobility, the Internet of Things (IoT), artificial intelligence, connectivity and 5G. At the heart […]
Comparing IGBT and SiC MOSFET PIMs in solar inverters
Side-by-side performance comparisons can show where silicon-carbide excels in PV installations. Steven Shackell • onsemi According to the International Energy Agency, solar power (PV) installations are on track to reach an installed capacity of 3,300 TWh by 2030, a yearly growth rate of 15% from 2019. Installations will be a mix of micro, mini and […]
eGaN FETs support 48–12V- DC-DC circuits ranging from 500 W to 2 kW
The EPC2069 (1.6 mΩ typical, 40 V) eGaN FET is ideal for applications with demanding requirements for high power density performance including 48 V – 54 V input servers. Lower gate charges and zero reverse recovery losses enable high frequency operation of 1 MHz, and beyond, at high efficiency in a tiny 10.6 mm2 footprint for […]
GaN power transistors handle up to 3 kW
GaN Systems introduced two new transistors in the industry’s broadest portfolio of GaN power transistors. The transistors are packaged in a standard 8×8 mm PDFN package. The GS-065-011-2-L allows users to reduce the cost per watt of delivered powered in 45W to 150W applications and the GS-065-030-2-L is the first GaN product on the market that enables designers to get […]
