Renesas Electronics Corporation announced a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for electric vehicle (EV) inverters. Gate driver ICs are essential components to EV inverters, providing an interface between the inverter control MCU and the IGBTs […]
Transistors
UV-C LEDs now available in TO-can packages
Silanna UV announces the release of two new products in its SF1 235nm and SN3 255nm series of UV-C LEDs: the SF1-3T9B5L1 and the SN3-5T9B5L1. Silanna UV’s new UV-C LEDs feature the Transistor Outline (TO-can) package format, which consists of a header and a cap that together form a hermetically sealed package. This innovative design […]
MOSFETS target EV motor, battery management apps
Magnachip Semiconductor Corporation announced that the company had launched its eighth-generation 150V MXT Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)1 optimized for Light Electric Vehicle (LEV) motor controllers and battery management systems (BMSs). Energy efficiency plays a critical role in electric devices regarding power consumption and product stability. This newly-released MOSFET (MDT15N054PTRH) features Magnachip’s eighth-generation trench MOSFET technology […]
AEC-Q101 qualified GaN FETs target 48-12 V dc/dc conversion, infotainment, LiDAR apps
Efficient Power Conversion Corporation expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 […]
650 V GaN HEMTs now offered with 80mΩ RDS(on)
Innoscience Technology announced a new low RDS(on) 650V E-mode GaN HEMT devices. INN650D080BS power transistors have an on-resistance of 80mΩ (60mΩ typical) in a standard 8×8 DFN package, enabling higher power applications, for example in totem pole LLC architectures or fast battery chargers. Thanks to Innoscience’s innovative strain enhancement layer, InnoGaN devices feature low specific RDS(ON) as […]
Selecting a gate driver for ASIL-certified systems
Several safety features now found in gate driver integrated circuits make it easier for automotive system designs to get ASIL certification. David Divins • Infineon Technologies The Automotive Safety Integrity Level (ASIL) is a risk classification system defined by the ISO 26262 standard for the functional safety of road vehicles. There are four ASIL safety […]
200-V MOSFETs target EV motor control, power supplies
Magnachip Semiconductor Corporation announced that the company has introduced its third-generation 200V Medium Voltage (MV) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) for Light Electric Vehicles (LEV) motor controllers and industrial power supplies. To maximize energy efficiency in power devices, Magnachip’s new 200V MOSFETs incorporate third-generation trench MOSFET technology. The capacitance was reduced by 50% compared to the previous generation […]
Turnkey GaN 140-W charger reference design covers USB PD3.1, single port type-c
GaN Systems announced the availability of a new turnkey 140W AC/DC charger reference design with USB PD3.1, Single Port Type-C Output. Compared to silicon-based chargers, this design is 40% lighter and 50% smaller, featuring an ultra-high-power density of 23W/in3. This design enhances GaN Systems’ portfolio (65W, 100W, 140W, 250W) of turnkey charger solutions for the consumer electronics market, […]
IGBTs feature FRDs and low thermal resistance
Bourns, Inc. entered the insulated-gate bipolar transistor (IGBT) market with the Company’s first high-efficiency 600 V/650 V discrete product line co-packaged with a fast recovery diode (FRD). Designed using advanced trench-gate field-stop technology that provides greater control of dynamic characteristics, the five new Bourns Model BID Series discrete IGBTs deliver lower collector-emitter saturation voltage (VCE(sat)) and lower switching losses compared […]
Open-drain DMOS transistor arrays optimized for climate control and home appliance designs
Diodes Incorporated has introduced a new transistor array. The DIODES ULN62003A consists of seven 500mA-rated open-drain transistors, where all their sources are connected to a common ground pin. Capable of driving a wide variety of loads, such as solenoids, relays, DC motors, and LED displays, this high-current transistor array is aimed at climate control and home […]
