Vishay Intertechnology, Inc. introduced a versatile new 30 V n-channel TrenchFET Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95 mΩ at 10 […]
RF Power
Isolated gate drivers handle SiC FETs
Silicon Labs announced the addition of Si828x version 2 to its isolated gate driver product family. This update allows the product family to effectively drive Silicon Carbide (SiC) Field Effect Transistor (FET) gates, addressing the growing market for half-and full-bridge inverters and power supplies that require improved power density, cooler operation, and reduced switching losses. […]
Digital dc-dc converter delivers 1300 W in half-brick package for RF power amplifier applications
Flex Power Modules announces the BMR685, the first digital DC/DC converter for Radio Frequency (RF) Power Amplifiers in the half-brick form factor that can provide a continuous output power of up to 1300 W. With telecoms infrastructure shifting to 5G, the RFPA is becoming increasingly power-hungry, and RF Power Amplifier designers are moving from LDMOS […]
High-frequency 100-nF capacitors improve bypass performance in GaN/GaAs amplifiers
Knowles Precision Devices recently announced the release of a new 100nF capacitor within its V-Series of single-layer capacitors. The 100nF is a high frequency, wire bondable single layer capacitor, making it ideally suited for GaN and GaAs amplifier applications where small size and microwave performance are critical. V-Series single-layer capacitors, including the new 100nF, are […]
ESD-suppression devices protect high-speed data lines
Nexperia announced three new TrEOS protection devices that provide the most compact method to suppress ESD in USB3.2, HDMI2.1, and other high-speed data lines. The new PUSB3BB2DF, PESD5V0C2BDF, PESD4V0Z2BCDF devices provide best-in-class ESD protection and system robustness by combining high RF performance with very low clamping and very high surge capability. The new parts […]
Buck-boost regulator features ultra-low quiescent current
Renesas Electronics Corporation introduced the ISL9122A, a flexible buck-boost switching regulator with bypass mode that provides ultra-low quiescent current (IQ) for powering sensors, microcontrollers (MCUs), wireless devices, and other system components. Operating with battery output from 1.8V to 5.5V, the ISL9122A extends the battery life of smart IoT devices powered by coin-cell, lithium, and multiple […]
Wireless charging chipset provides 30 W of power
Integrated Device Technology, Inc., a wholly-owned subsidiary of Renesas Electronics Corporation announced sampling of the P9415 receiver and P9247 transmitter that work together to enable smartphones to charge wirelessly with up to 30W of power, narrowing the charging time gap between wireless and wired charging options. The P9415 receiver accommodates up to 20V out of the onboard […]
Half-brick dc/dc converters target 700-W RF power amp applications
Flex Power Modules announced the release of the PKJ4000 series of DC/DC converters primarily targeting radio frequency power amplifier (RFPA) applications within the telecom market segment. The PKJ4000 series delivers 28V DC or 50V DC at up to 700W of power from an input voltage range of 36V to 75V. Packaged in the industry-standard half-brick […]
New crystal structure triples output power of GaN transistors, expands radar observation range
Fujitsu and Fujitsu Laboratories have succeeded in developing a transistor that can provide both high current and high voltage in gallium-nitride (GaN) high electron mobility transistors (HEMT), effectively tripling the output power of transistors used for transmitters in the microwave band. Fujitsu’s crystal structure improves operating voltage by dispersing the applied voltage to the transistor, and […]
GaN HEMT RF power devices handle 250 W, work up to 3 GHz
Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, has extended its family of 50V unmatched GaN HEMT RF power devices by adding a 250W part with a frequency range up to 3.0GHz and the highest efficiency of any comparably-rated […]
