Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the performance of power systems by reducing undesired deadtime losses, thereby further increasing overall system efficiency. Additionally, the integrated solution simplifies the […]
Transistors
Power components enhance efficiency in renewable energy systems
Magnachip Semiconductor Corporation announced the launch of two new 6th-generation (Gen6) 650V Insulated Gate Bipolar Transistors (IGBTs), specifically designed for solar inverters. The newly introduced Gen6 IGBTs, incorporating polyimide insulation layers, demonstrate outstanding performance by passing high-voltage, high-humidity and high-temperature reverse bias (HV-H3TRB) tests. These products offer dependable reliability in industrial equipment operating under extreme […]
GaN HEMT features second-gen elements in TOLL package design
ROHM Semiconductor has announced the GNP2070TD-Z 650V GaN HEMT in the TO-Leadless (TOLL) package. The TOLL package offers a compact design with thermal dissipation capabilities suitable for high current applications and switching performance needs. The package manufacturing has been outsourced to ATX Semiconductor (Weihai) Co., Ltd., a specialized OSAT (Outsourced Semiconductor Assembly and Test) provider […]
GaN transistors adopt industry-standard MOSFET package dimensions
Infineon Technologies AG addresses this challenge by announcing the high-performance gallium nitride CoolGaN G3 Transistor 100 V in RQFN 5×6 package (IGD015S10S1) and 80 V in RQFN 3.3×3.3 package (IGE033S08S1). The CoolGaN G3 100 V Transistor devices will be available in a 5×6 RQFN package with a typical on-resistance of 1.1 mΩ. Additionally, the 80 […]
SiC wafer production moves to 200 mm
Infineon Technologies AG announces its 200 mm silicon carbide (SiC) manufacturing capability, with initial product releases scheduled for Q1 2025. The products, manufactured in Villach, Austria, target high-voltage applications including renewable energy systems, rail transport, and electric vehicles. The company’s Kulim, Malaysia facility continues its transition from 150 mm to 200 mm wafer production, with […]
IGBT modules switch 1700 V, 900 A
Microchip’s IGBT 7 series provide engineers with power control for a wide range of applications. Microchip Technology announced a series of IGBT 7 devices in several packages, topologies, current ranges, and voltage ranges. According to Microchip, the devices feature increased power capability, lower power losses, and compact device sizes. The company says these devices meet […]
What makes SiC tick?
Silicon carbide is a notoriously hard and complex material. Wafer production for fabricating SiC power semiconductors leverages intensive engineering of manufacturing processes, specifications, and equipment to achieve commercial quality and cost-effectiveness. Necessity and invention Wide-bandgap semiconductors are changing the game in power electronics, enabling system-level efficiency to move beyond the practical limits of silicon devices […]
Publication covers GaN components for power applications
Mouser Electronics, Inc. announces a new eBook in collaboration with Analog Devices, Inc. (ADI) and Bourns, exploring the challenges and benefits of Gallium Nitride (GaN) technology in the pursuit of efficiency, performance, and sustainability. 10 Experts Discuss Gallium Nitride Technology explores how GaN technology, which enables higher efficiency, faster switching speeds, and greater power density […]
Mitigate reverse recovery overshoot in MOSFET body diodes
Because of their compact size, higher efficiency, and superior performance in high-power applications, SiC MOSFETs are now replacing Si devices in switching applications. SiC devices enable faster switching times, significantly reducing switching losses. These advantages stem from the unique electrical and material properties of SiC-based devices — snappy reverse recovery inherent to the structure of […]
Bipolar junction transistors show their muscle
Recent enhancements to the classic BJT show that the classic transistor has plenty of life left and can challenge SiC and GaN devices in some power applications. Amidst the advances in CMOS and wide bandgap semiconductor technology, you can easily forget that the first transistor invented by William Shockley in 1949 was a bipolar junction […]
