There’s a lot of benefits that come with silicon carbide semiconductor devices. Increased power density, increased efficiency, lower form factor, simpler designs, simpler thermal management, are all examples of the benefits. But along with the things that silicon carbide enables, there’s also some side effects that make them hard to control, and if they’re not […]
Transistors
Automotive LEDs drivers deliver pre-set or adjustable current
Diodes Incorporated extends its family of automotive LED drivers with the BCR4xxUQ series that simplifies the driving of low-power lighting. LED technology is displacing conventional bulbs throughout the car: from external lighting such as side markers, puddle lighting and sill plates, to internal lighting including dome, ambient lights, instrument clusters and button backlighting. The BCR4xxUQ […]
GaN FET driver excels at solid-state light detection and LiDAR apps
In IMS Booth #1349, pSemi Corporation (formerly known as Peregrine Semiconductor), a Murata company focused on semiconductor integration, announces the availability of the PE29101 gallium nitride (GaN) field-effect transistor (FET) driver for solid-state light detection and ranging (LiDAR) systems. The PE29101 boasts the industry’s fastest rise times and a low minimum pulse width. This high-speed […]
Gate-driver IC family certified to AEC-Q100 Grade Level 1 offer high-power safety and functionality
Power Integrations announced that two members of its SCALE-iDriver gate-driver IC family are now certified to AEC-Q100 Grade Level 1 for automotive use. The two parts, SID1132KQ and SID1182KQ, are suitable for driving 650 V, 750 V and 1200 V automotive IGBT and SiC-MOSFET modules, and are rated for peak currents of +/-2.5 A and […]
IGBTs deliver short-circuit tolerance, high switching speed
ROHM announced the availability of 2 new types of 650V IGBTs that combine class-leading low conduction loss with high-speed switching characteristics. This makes them ideal for power conversion in general-purpose inverters and converters for consumer appliances, such as ACs and IH (Induction Heaters), as well as industrial equipment, including power conditioners, welding machines, and UPS (Uninterrupted Power […]
650-V GaN FETs with 4-V threshold
Transphorm today announced availability of its third generation (Gen III) 650-V GaN FETs. Power transistors built on Gen III technology yield lower electromagnetic interference (EMI), increased gate noise immunity, and greater headroom in circuit applications. The latest evolution of the award-winning platform stems from knowledge gained by the Transphorm team working with customers on end […]
IGBT in high-density D2PAK handles up to 40 A, 650 V
Infineon Technologies AG expands its product portfolio of the thin-wafer technology TRENCHSTOP 5 IGBT. The new product family is offering up to 40 A 650V IGBT, co-packed with a full rated 40 A diode in a surface mounting TO-263-3 also known as D2PAK. The new TRENCHSTOP 5 IGBT in D2PAK package serves the growing demand […]
1200 V, 80 and 40 mΩ JFETS provide upgrade path for IGBT, Si, and SiC-MOSFET users
Designers of Power Factor Correction stages (PFCs), Active Frontend Rectifiers, LLC converters and Phase Shift Full Bridge converters can now upgrade existing system performance by using the new UJ3C1200 series of SiC JFET cascodes from UnitedSiC. With a voltage rating of 1200 V and ON-resistances of 80 and 40 milliohms, these devices offer a ‘drop-in’ […]
Students take GaN from design to build in China Power Supply Society design competition
In support of worldwide innovation in the power electronics industry, GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, is once again sponsoring the distinguished China Power Supply Society (CPSS) design competition, which is currently underway with many top engineering teams participating from leading universities throughout China. The fourth annual “GaN Systems Cup,” continues to promote […]
eGaN power transistors get AEC-Q101 qualification for use in harsh environments
EPC announces successful AEC-Q101 qualification of two eGaN devices, opening a range of applications in automotive and other harsh environments. The products, EPC2202 and EPC2203, are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS ratings and will soon be followed with several more discrete transistors and integrated circuits designed for the […]