Because of their compact size, higher efficiency, and superior performance in high-power applications, SiC MOSFETs are now replacing Si devices in switching applications. SiC devices enable faster switching times, significantly reducing switching losses. These advantages stem from the unique electrical and material properties of SiC-based devices — snappy reverse recovery inherent to the structure of […]
Transistors
Bipolar junction transistors show their muscle
Recent enhancements to the classic BJT show that the classic transistor has plenty of life left and can challenge SiC and GaN devices in some power applications. Amidst the advances in CMOS and wide bandgap semiconductor technology, you can easily forget that the first transistor invented by William Shockley in 1949 was a bipolar junction […]
3.2mΩ on-resistance GaN transistor targets battery protection applications
Innoscience Technology has launched a new generation of battery management system (BMS) solutions based on VGaN technology. Increased demand for convenient eco-friendly travel, mobile energy storage, and small power solutions has driven rapid market developments. Battery protection system (BMS) technology needs further advancement to improve battery safety and efficiency. GaN technology supports this by improving efficiency, […]
Power BJTs available in DFN2020D-3 packaging with 50 V and 80 V ratings
Nexperia announced the latest extension to its popular portfolio of power bipolar junction transistors (BJTs) with the release of ten standards and ten automotive-qualified products in DFN2020D-3 packaging. These new devices, available in 50 V and 80 V ratings and supporting current ranges from 1 A to 3 A in NPN and PNP polarity, further […]
Transistors enhance efficiency and cut power losses
Infineon Technologies AG has introduced the CoolGaN™ Transistor 700 V G4 product family, engineered for efficient power conversion up to 700 V. These transistors provide a 20 percent improvement in input and output figures-of-merit over other GaN products, resulting in higher efficiency, reduced power losses, and cost-effective solutions. Their advanced electrical characteristics and packaging ensure […]
Military-grade transistors meet rigorous standards for radiation exposure
Microchip Technology has announced that its portfolio of JAN transistors is now tested and qualified to Military-Standard Enhanced Low Dose Radiation Sensitivity (ELDRS) requirements, including MIL-STD-750, Test Method 1019, and specifications such as MIL-PRF-19500/255, /291, /355, /376, and /391. These military-grade transistors are designed to withstand varying levels of radiation exposure and are part of the […]
Qorvo claims lowest on resistance in SiC JFET TOLL package for circuit breakers
Qorvo announced the industry’s first 4-milliohm silicon carbide (SiC) junction field effect transistor (JFET) in a TOLL package. It was designed for circuit protection applications including solid-state circuit breakers, where low resistance, superior thermal performance, small size, and reliability are paramount. With RDS(on) of just 4 milliohms, the UJ4N075004L8S offers the industry’s lowest on-resistance among the 650V […]
GaN portfolio expanded to include high- and medium–voltage families
Infineon Technologies AG announces two new generations of high voltage (HV) and medium voltage (MV) CoolGaN devices which now enable customers to use Gallium Nitride (GaN) in voltage classes from 40 V to 700 V in a broader array of applications that help drive digitalization and decarbonization. These two product families are manufactured on high-performance […]
Semiconductor firms collaborate on innovative GaN SiP family
Transphorm, Inc. and Weltrend Semiconductor Inc. announced the availability of two new GaN System-in-Packages (SiPs). When combined with Weltrend’s flagship GaN SiP announced last year, the new devices establish the first SiP product family based on Transphorm’s SuperGaN® platform. The new SiPs, WT7162RHUG24B and WT7162RHUG24C, integrate Weltrend’s high-frequency multi-mode (QR/Valley Switching) Flyback PWM controller with […]
Power module combines GaN transistor and isolated driver in single package
Teledyne e2v HiRel Electronics proudly announces the release of the TDGM650LS60, the first product in its innovative new 650V power module family. This new module utilizes a Teledyne high-voltage Gallium Nitride (GaN) transistor and integrates an isolated driver in one package. Designed to serve as a load switch or solid-state switch, the TDGM650LS60 offers unparalleled […]
