Nexperia released a new series of 500 mA dual resistor-equipped transistors (RET) in ultra-compact DFN2020(D)-6 packaging. These devices have been designed for load switching in wearables and smartphones as well as for use in digital circuits with higher power requirements. Such as space-constrained computing, communications, industrial, and automotive applications. Notably, the RET in DFN configuration […]
Transistors
1200 V and 650 V IGBTs designed for EV PTC heaters
Magnachip Semiconductor Corporation announced the launch of its 1200V and 650V Insulated Gate Bipolar Transistors (IGBTs), designed for the positive temperature coefficient (PTC) heaters of electric vehicles (EVs). Built upon Magnachip’s cutting-edge Field Stop Trench technology, the newly introduced AMBQ40T120RFRTH (1200V) and AMBQ40T65PHRTH (650V) offer a minimum short-circuit withstand time of 10µs. This remarkable level […]
GaN driver sinks and sources up to 3A gate current to connected transistor
STMicroelectronics’ first galvanically isolated gate driver for gallium-nitride (GaN) transistors, the STGAP2GS, trims dimensions, and bill-of-materials costs in applications that demand superior wide-bandgap efficiency with robust safety and electrical protection. The single-channel driver can be connected to a high-voltage rail up to 1200V, or 1700V with the STGAP2GSN narrow-body version, and provides gate-driving voltage up […]
SuperGaN FETs establish cost-effective design option for power range exceeding 1 kW
Transphorm, Inc. released details on a high-performance, low-cost driver solution. For use in low- to mid-power applications such as LED lighting, charging, microinverters, UPSes, and gaming computers, the design option strengthens the company’s value proposition for customers in those segments of the $3 billion power market. Unlike competing e-mode GaN solutions that require custom drivers […]
600 V SJ MOSFET boasts RDS(on) of 44 mΩ for EV chargers and servers
Magnachip Semiconductor Corporation announced that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs) consisting of nine distinct products featuring proprietary design technology. Magnachip’s proprietary design provides a specific on-resistance (RSP) reduction of about 10%, and this result was achieved while maintaining the same cell […]
How much can GaN improve sustainability and reduce CO2 emissions?
Gallium nitride (GaN) power semiconductors are about less — less CO2 emission from device fabrication, less materials in the devices and power converters using GaN, less cost due to higher frequency operation and smaller passive components, and less thermal dissipation due to higher efficiencies. Those performance factors combine to improve the sustainability of power converters […]
How multilevel converters and SiC can improve sustainability
Modular multilevel converters (MMCs) are an advanced form of a voltage source converter. They are emerging as the preferred choice in medium- and high-voltage green energy applications like high-voltage DC (HVDC) transmission systems, medium voltage motor drives including electric vehicles (EVs), wind and solar renewable energy systems, battery energy storage systems (BESS), and EV chargers […]
1200 V IGBTs for high-power infrastructure applications
onsemi announced a new range of ultra-efficient 1200 V insulated-gate bipolar transistors (IGBTs) that minimize conduction and switching losses at a performance level that is industry-leading in the market. Intended to enhance efficiency in fast switching applications, the new devices will be primarily used in energy infrastructure applications like solar inverters, uninterruptible power supplies (UPS), […]
Gate drivers design drives high-voltage power devices for TVs
Renesas Electronics Corporation announced a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for electric vehicle (EV) inverters. Gate driver ICs are essential components to EV inverters, providing an interface between the inverter control MCU and the IGBTs […]
UV-C LEDs now available in TO-can packages
Silanna UV announces the release of two new products in its SF1 235nm and SN3 255nm series of UV-C LEDs: the SF1-3T9B5L1 and the SN3-5T9B5L1. Silanna UV’s new UV-C LEDs feature the Transistor Outline (TO-can) package format, which consists of a header and a cap that together form a hermetically sealed package. This innovative design […]
