Infineon Technologies AG expands its 1200 V discrete IGBT product portfolio by offering up to 75 A. The devices are co-packed with a full rated diode in a TO-247PLUS package. The new TO-247PLUS 3pin and 4pin packages serve the growing demand for higher power density and highest efficiency in discrete packages. Typical applications with a […]
Transistors
High-temperature photocouplers target EV, HEV power module use
Toshiba America Electronic Components, Inc. (TAEC) has introduced a new range of 10 AEC Q101-qualified photocouplers designed to address the demanding isolation, interface, switching, and form factor requirements of automotive applications. Toshiba’s new range of photocouplers features a wide variety of devices – including the IC output TLX9304, TLX9378 and TLX9376 – which are housed […]
eGaN 30-V half-bridge module targets PoL apps
Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs announces the EPC2111, 30 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency […]
Power switch protects VBUX lines, meets fast role swap timing requirements of USB Type-C
The DPS1133 single-channel power switch introduced by Diodes Incorporated high-voltage power switch is designed to meet all the demanding protection and fast-role swap requirements of USB Type-C(TM) ports. As such, it addresses the full gamut of mobile and desktop computing devices and peripherals, and numerous other applications in the consumer electronics, mobile communications, industrial, and medical […]
UPS series provides up to 2.1 MVA
Mitsubishi Electric’s environmentally friendly uninterruptible power supplies (UPS), announces a significant extension to their already successful 9900 Series UPS in three new sizes: 1.4, 1.75, and 2.1 MVA. Like all other Mitsubishi Electric UPS products, these new units are all three-phase, online double-conversion systems and feature Insulated Gate Bipolar Transistor (IGBT) technology for improved performance […]
50-V GaN MMICs handle D-Day radar apps
Wolfspeed, A Cree Company has introduced two new GaN MMICs, the first 50V GaN devices specifically designed for S-band radar (2.7–3.5GHz) applications. These new 50V GaN MMICs enable radar systems designers to reduce time to market with a less costly, less complex, 50V power amplifier line-up, while delivering the most efficiency possible. With a best-in-class combination […]
First GaN-based AC-DC power supply with totem pole PFC topology
Transphorm Inc. stated today that the recently announced high-efficiency TET3000-12-069RA power supply marks another GaN industry milestone. Developed by Bel Power Solutions, a Bel group company, the AC to DC front-end TET3000 uses a GaN-based bridgeless totem-pole power factor correction (PFC) topology to achieve greater than 96 percent efficiency. The power supply will be displayed during […]
The formidable forgotten FETs
The world is full of MOSFETs — they are the cornerstone of most ICs. However, the humble JFET still exists, although it is a bit of a niche market now and not always easy to find. Vishay, who took over the Siliconix brand many years ago, seem to have dropped JFETs now, although Siliconix was one […]
Littelfuse and Monolith Semiconductor debut 1200 V Silicon Carbide (SiC) Schottky diodes at PCIM
Littelfuse, Inc. and Monolith Semiconductor, Inc. introduced the first commercially available silicon carbide devices developed through their partnership: the GEN2 Series of 1200 V Silicon Carbide (SiC) Schottky Diodes. Visitors to the Littelfuse booth (Hall 7, Booth 335) at the PCIM (Power Conversion and Intelligent Motion) Europe 2017 Exhibition can talk to technical experts about […]
IGBTs come in fully isolated TO-247 package
Infineon Technologies AG introduces the new package technology TRENCHSTOP Advanced Isolation. It is available for TRENCHSTOP and TRENCHSTOP Highspeed 3 IGBTs for best-in-class thermal performance and simpler manufacturing. The two versions are performance optimized to replace both fully insulated packages (FullPAKs) as well as standard and high-performance isolation foils. The new package targets applications like […]
