Silicon Labs has expanded its ISOdriver portfolio with a family of isolated gate drivers designed to protect sensitive insulated-gate bipolar transistor (IGBT) switches in power inverter and motor drive applications. The new Si828x ISOdriver family provides industrial-grade isolation (5 kVrms withstand), best-in-class feature integration including an optional dc-dc converter, the industry’s fastest desaturation detection, superior timing […]
Transistors
Littelfuse to Acquire TVS diode/IGBT/thyristor Portfolio From ON Semiconductor
Littelfuse, Inc., today announced it has entered into definitive agreements to acquire the product portfolio of transient voltage suppression (“TVS”) diodes, switching thyristors and insulated gate bipolar transistors (“IGBT”) for automotive ignition applications from ON Semiconductor Corporation for a combined purchase price of $104 million. This portfolio has annualized sales of approximately $55 million. The […]
Low-capacitance TVS diode Arrays work as common-mode filters
Littelfuse has introduced a series of low capacitance TVS Diode Arrays optimized for protecting electronic equipment that may experience destructive electrostatic discharges (ESDs). SP814x Series TVS Diode Arrays (SPA® Diodes) integrate four or six channels of ultra-low-capacitance rail-to-rail diodes and an additional zener diode to safely absorb repetitive ESD strikes above the maximum level specified […]
SiC MOSFETs feature 1.7 kV breakdown voltage
ROHM has recently announced the availability of a new 1700V SiC MOSFET optimized for industrial applications, including manufacturing equipment and high-voltage general-purpose inverters. In recent years, the growing trend to conserve energy in all areas has increased the demand for energy-saving power semiconductors, particularly for applications in the industrial sector such as general-purpose inverters and […]
SiC power MOSFET handles 225°C junction temperatures
TT Electronics, a global provider of engineered electronics for performance critical applications, today launched a Silicon Carbide (SiC) power MOSFET that is designed for high temperature, power efficiency applications with a maximum junction temperature of +225°C. As a result of this operating potential, the package has a higher ambient temperature capability and can therefore be […]
GaN power devices get wider distribution
Richardson RFPD, Inc. announced an agreement with GaN Systems Inc. Under the terms of the agreement, Richardson RFPD will sell GaN Systems’ GaN on Si power devices on a global basis, excluding Israel. GaN Systems manufactures a range of gallium nitride high-power transistors for consumer, enterprise, industrial, solar/wind/smartgrid, and transportation power-conversion applications. “GaN Systems adds […]
Tester checks IGBT thermal reliability
for electric, hybrid vehicles
A new platform tests electric and hybrid vehicle (EV/HEV) power electronics reliability during power cycling. Developed by Mentor Graphics, the MicReD Power Tester 600A lets EV/HEV development and reliability engineers test power electronics (such as insulated gate bipolar transistors – IGBTs, MOSFETs, transistors, and chargers) for mission-critical thermal reliability and lifecycle performance. The Mentor Graphics […]
1.2-kV IGBTs boast super-low switching losses
ON Semiconductor has introduced a new series of insulated gate bipolar transistors (IGBTs) that use its proprietary Ultra Field Stop trench technology. The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are designed to deliver elevated levels of operational performance in order to meet the exacting demands of modern switching applications (Ets). These 1200 V devices are able to achieve total […]
GaN HEMT die hit 8 GHz
Wolfspeed has released a new 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11 – 13, 2016 in Clearwater Beach, Fla. Designed for up to 8GHz operation, the new 28V GaN HEMT die exhibits 12dB typical small signal gain at 8GHz, 17dB typical […]
