Renesas Electronics Corporation introduced new 100V high-power N-Channel MOSFETs that deliver industry-leading high-current switching performance for applications such as motor control, battery management systems, power management, and charging. End products include electric vehicles, e-bikes, charging stations, power tools, data centers, uninterruptable power supplies (UPS,) and more.Renesas has developed a new MOSFET wafer manufacturing process (REXFET-1) that enables the new devices to drastically reduce on-resistance (the resistance between the drain and source when the MOSFET is on) by 30 percent. The lower on-resistance contributes to much lower power loss in customer designs.
The REXFET-1 process also enables the new MOSFETs to offer a 10 percent reduction in Qg characteristics (the amount of charge needed to apply voltage to a gate), and a 40 percent reduction in Qgd (the amount of charge that needs to be injected into the gate during the “Miller Plateau” phase).
In addition to superior electrical characteristics, Renesas’ new RBA300N10EANS and RBA300N10EHPF MOSFETs are available in industry-standard TOLL and TOLG packages that are pin-compatible with devices from other manufacturers and 50 percent smaller than traditional TO-263 packages. The TOLL package also offers wettable flanks for optical inspection.
The RBA300N10EANS and RBA300N10EHPF MOSFETs are available in production volumes today. Renesas also offers a reference design with application note to help customers shorten design cycles. More information on these new products is available at www.renesas.com/MOSFET.
