GigaDevice has introduced the GD25NX family of dual-voltage xSPI NOR Flash devices, designed with a 1.8 V core and 1.2 V I/O interface. The series connects directly to 1.2 V system-on-chip designs without requiring an external booster, reducing overall power consumption and component count.
The GD25NX line builds on earlier 1.2 V I/O products and is intended for use in wearables, data center equipment, edge AI systems, and automotive electronics. The devices support an octal SPI interface operating at up to 200 MHz in both STR and DTR modes, enabling data throughput up to 400 MB/s. A typical page-program time of 0.12 ms and a sector-erase time of 27 ms provide faster operation than conventional 1.8 V octal Flash devices.
The series includes ECC and CRC mechanisms to improve data integrity and lifespan, as well as a data strobe (DQS) signal to support high-speed timing requirements. Read current is specified at 16 mA in Octal STR mode and 24 mA in Octal DTR mode at 200 MHz. The 1.2 V I/O architecture reduces read-mode power consumption compared with 1.8 V devices while maintaining high-speed performance.
Initial densities are 64 Mb and 128 Mb, with package options including TFBGA24 (8 × 6 mm, 5 × 5 ball array) and WLCSP (4 × 6 ball array). Samples of the 128 Mb GD25NX128J are available, and 64 Mb GD25NX64J samples are in preparation. Technical information and pricing are available through GigaDevice sales channels.
Leave a Reply
You must be logged in to post a comment.