Efficient Power Conversion Corporation expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET.

The EPC2071 is ideal for applications with demanding requirements for high power density performance including 48 V – 54 V input DC-DC for new servers and artificial intelligence. Lower gate charges, QGD, and zero reverse recovery losses enable high-frequency operations of 1 MHz and beyond and high efficiency in a tiny 10.2 mm2 footprint for state-of-the-art power density.
The EPC2071 is ideal for BLDC motor drives, including e-bikes, e-scooter, robots, drones, and power tools. The EPC2071 is 1/3rd the size of a silicon MOSFET with the same RDS(on), QG is 1/4th that of the MOSFET, and the dead time can be reduced from 500 ns to 20 ns to optimize motor plus inverter efficiency and reduce acoustic noise.

The EPC2071 is footprint compatible with EPC’s prior Generation 4 family of products: EPC2021, EPC2022, and EPC2206. The Generation 5 improvement in Area x RDS(on) gives the EPC2071 the same on-resistance as the prior generation with a 26% smaller size.

The EPC9174 reference design board is a 1.2 kW, 48 V input to 12 V output LLC converter. It features the EPC2071 for the primary side full bridge. The EPC2071 enables a 1 MHz switching frequency and 1.2 kW of power in a small 22.9 mm x 58.4 mm x 10 mm size (power density 1472 W/in3). The peak efficiency is 97.3% at 550W and the full load efficiency of 96.3% at 12 V, delivering 100 A output.

The EPC2071 eGaN FET is priced at 1K u/reel at $3.81 each. The EPC9174 development board is priced at $498.00/each. Both the EPC2071 and EPC9174 demonstration boards are available for immediate delivery from Digi-Key.