eGaN power transistor hits 97% efficiency at 500 kHz

The EPC2051 is a 100-V GaN transistor with a maximum R_DS(on) of 25 mΩ and a 37-A pulsed output current for high efficiency power conversion in a tiny 1.1-mm² footprint. Applications demanding higher efficiency and power density no longer have to choose between size and performance. The EPC2051 measures just 1.30×0.85 mm (1.1 mm²). Despite the small footprint, operating in a 50 – 12 V buck converter, the EPC2051 achieves 97% efficiency at a 4-A output while switching at 500 kHz. In addition, the low cost of the EPC2051 brings the performance of GaN FETs at a price comparable to silicon MOSFETs. Applications benefiting from this performance, small size, and low cost include 48-V input power converters for computing and telecom systems, LiDAR, LED Lighting, and Class-D audio.

“The ability of eGaN based power devices to operate efficiently at high frequency widens the
performance and cost gap with silicon. The 100-V, EPC2051, is 30 times smaller than the closest
silicon MOSFET.” said Alex Lidow, EPC’s CEO.

The EPC9091 development board is a 100-V maximum device voltage, half-bridge featuring the
EPC2051, and the UP1966A gate driver from uPI Semiconductor. This 2×2-in. (50.8×50.8 mm)
board is designed for optimal switching performance and contains all critical components for easy evaluation of the 100-V EPC2051 eGaN FET.

The EPC2051 eGaN FET is priced for 1K units at $0.67 each and $0.37 in 100K volumes and the
EPC9091 development board is priced at $118.75 each. Both products are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Efficient Power Conversion, 909 N Sepulveda Blvd., Suite 230, El Segundo, CA 90245, www.epc-co.com