eGaN power devices now available in wafer form

EPC announces the availability of their enhancement-mode gallium nitride (GaN) devices in wafer form for ease of integration. EPC’s eGaN FETs and ICs are traditionally sold as singular chip-scale devices with solder bars or solder bumps.

Chip-scale packaging is a more efficient form of packaging that reduces the resistance, inductance, size, thermal impedance, and cost of power transistors. These attributes of eGaN devices enable unmatched in-circuit performance at competitive prices.

Wafer-level offerings of these devices allows for easier integration in customer power system sub-assemblies, further reducing device interconnect inductances and the interstitial space needed on the printed circuit board (PCB). This increases both efficiency and power density while reducing assembly costs.

“We have listened to our partners and are pleased to offer our industry-leading GaN products in wafer form that can accommodate a variety of assembly techniques and applications,” commented Alex Lidow, CEO and co-founder of EPC.

EPC is offering eGaN power devices in wafer form either with or without solder bumps.  Extra services such as wafer thinning, metallization of the wafer backside, and application of backside coating tape are also available. More information can be found at: epc-co.com/epc/Products/WaferSales.aspx