GaN revolutionaries
Now into their second-generation of GaN devices in production and with 17 design wins so far this year, Transphorm is taking their 650 V devices on the road with their AEC-Q101 qualification. The TPH3205WSBQA offers an on-resistance of 49 mΩ in an industry standard TO-247 package and is JEDEC-qualified and tested over 3000 hours.
“We design the 650 V devices conservatively,” says Zan Huang, Market and Field apps director, “they actually have a breakdown of 1500 V and above.”
Transphorm also prides themselves on their GaN’s low dynamic RD(s) on. “It is known issue for GaN devices,” says Huang, “We even put it on our datasheet and we show people how we do the test. Our dynamic RD(s) on will not exceed a 10 percent and we guarantee that maximum number on our datasheet.”
Transphorm is currently the only company using GaN in a cascode configuration. “An advantage to cascode mode over E-Mode,” says Huang, “is that if you look at cascode mode, the safety margin of the gate is +/-13 V and does not require a special driver. E-Mode only has a 3V safety margin. But we will continue to research E-Mode.”
More info: High-efficiency, fast-switching GaN FET earns AEC-Q101 qualification
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