In the demo for the two-level full-bridge LLC resonant converter, two parallel devices are connected at each switch position to deliver 20kW of continuous output power with a wide output voltage range of 300 570VDC at peak efficiency of >98 percent. The high switching speed of SiC MOSFETs results in extremely short dead times, according to the company, which in turn enables the design of compact resonant tank circuit components with resonant frequencies of 110 350kHz. Additionally, the 1kV rating of the SiC MOSFETs allows for a simple 2-level topology, despite the wide input voltage range of 650 750VDC.

This design is suitable for DC fast charger applications for EVs, as well as other applications that require an isolated DC/DC converter. The hardware features integrated, isolated forced-air cooling, and delivers 33 percent more power with 20 percent fewer components in a smaller footprint than conventional Si-based multilevel designs.

More Wolfspeed news – SiC MOSFETs handle 1.2 kV wth 75 mΩ ON resistance

SiC Shottky diodes carry 650 V, 1,200V ratings