VisIC Technologies is now sampling the industry’s ﬁrst 1200V GaN modules and is announcing a major manufacturing partnership with TSMC on their GaN on silicon technologies that were announced last year. Engineering samples are now in design with lead customers, and trade demonstratons will take place during PCIM China 2018 Shanghai.
The new VisIC module, based on TSMC’s 650D GaN-on-Silicon process, leverages the wide bandgap technology that is revolutionizing the world of xEV power electronics and data center power supplies. TSMC’s GaN on Silicon process further provides high yield and fast ramp-up capabilities, while VisIC’s GaN transistor design brings unprecedented levels of performance. Switching time below 10 nanoseconds is ensured by a high electron mobility transistor (HEMT) design, where electrons ﬂow in a 2-dimensional quantum well, which fun- damentally diﬀers from electron ﬂow in SiC MOSFETs.
With 1200 V ratings, the GaN module oﬀers typical on resistance of just 40 mΩ. Target applications are power converters for motor drives, three-phase power supplies and other applications requiring current switching up to 50 A.
VisIC’s 1200V GaN device is a half-bridge module that integrates GaN high-electron mobility transistors (HEMTs) with push-pull and over-current and over-temperature protections in a single package. The design takes advantage of VisIC’s innovative Advanced Low Loss Switch (ALL-Switch) technology, which uses a patented, high-density lateral layout that results in fast switching performance and low RDS(on).
The high-voltage GaN module oﬀers reduced gate charge and capacitances with low RDS(on), so the switching energy for the GaN device is as low as 140 µJ. Consequently, the switching losses are three to ﬁve times lower as compared to comparable silicon carbide MOSFETs.
VisIC’s new product opens access to a wider market of devices with 1200V blocking volt- age, currently serviced by Silicon IGBT and Silicon Carbide (SiC) MOSFET devices.
In addition to UPS and xEV chargers, 1200V GaN technology enables a wide range of invert- er applications, which require high current, in the range of hundreds of Amperes. These high-current applications require a high volume GaN manufacturing capability, which TSMC provides.
More information: VisIC Technologies LTD, Golda Meir 7, Nes Ziona, 7403650 Israel; 972 8 972009; firstname.lastname@example.org