Cambridge GaN Devices (CGD) has launched its lowest ever on-resistance (RDS(on)) parts which have been engineered with a new die and new packages to deliver the benefits of GaN to high-power applications such as data centers, inverters, motor drives, and other industrial power supplies. New ICeGaN P2 series ICs feature RDS(on) levels down to 25 mΩ, supporting multi kW power levels with the highest efficiency.
Incorporating an on-chip Miller Clamp to eliminate shoot-through losses during fast switching and implementing 0 V turn off to minimise reverse conduction losses, ICeGaN ICs outperform discrete e-Mode GaN and other incumbent technologies. The new packages offer improved thermal resistance performance as low as 0.28 K/W – again, equivalent or better than anything else currently available on the market – and the dual-gate pinout of the dual side DHDFN-9-1 (Dual Heat-spreader DFN) package facilitates optimal PCB layout and simple paralleling for scalability, enabling customers to address multi kW applications with ease. The new packages have also been engineered to improve productivity, with wettable flanks to simplify optical inspection.
New P2 Series ICeGaN power ICs are sampling now. The family includes four devices with RDS(on) levels of 25 mΩ and 55 mΩ, rated at 60 A and 27 A, in 10 x 10 mm footprint DHDFN-9-1 and BHDFN-9-1 (Bottom Heat-spreader DFN) packages. In common with all CGD ICeGaN products, the P2 series can be driven using any standard MOSFET or IGBT driver.
Two demo boards feature the new P2 devices: a single leg of a 3-phase automotive inverter demo board, developed in partnership with the French public R&I institute IFP Energies nouvelles, and a 3 kW totem-pole power factor correction demo board.
The new P2 series ICeGaN GaN power ICs and demo boards were unveiled publicly at the PCIM exhibition on CGD’s booth # 7 643, Nürnberg Messe, Nuremberg, Germany, 11-13th June 2024.
Leave a Reply
You must be logged in to post a comment.