ROHM Semiconductor has announced the GNP2070TD-Z 650V GaN HEMT in the TO-Leadless (TOLL) package. The TOLL package offers a compact design with thermal dissipation capabilities suitable for high current applications and switching performance needs. The package manufacturing has been outsourced to ATX Semiconductor (Weihai) Co., Ltd., a specialized OSAT (Outsourced Semiconductor Assembly and Test) provider with technical expertise in GaN device production.
Motors and power supplies represent a significant portion of global electricity consumption, making efficiency improvements essential for decarbonization goals. Power devices utilizing materials such as SiC (Silicon Carbide) and GaN can provide efficiency enhancements for power supply systems. ROHM began mass production of first-generation 650V GaN HEMTs in April 2023, followed by power stage ICs that integrate a gate driver and 650V GaN HEMT. The newly developed product incorporates second-generation elements in a TOLL package, complementing the existing DFN8080 package to expand ROHM’s 650V GaN HEMT package options.
The new products feature second-generation GaN-on-Si chips in a TOLL package, achieving notable RDS(on) × Qoss values, a device metric that correlates ON-resistance and output charge. This specification supports size reduction and energy efficiency in power systems requiring high voltage resistance and high-speed switching performance.
For production implementation, ROHM applied proprietary technology and device design expertise through its vertically integrated production system. Under a collaboration announced in December 2024, Taiwan Semiconductor Manufacturing Company Limited (TSMC) handles front-end processes while ATX manages back-end processes. ROHM and ATX plan to extend their partnership to produce automotive-grade GaN devices, responding to the anticipated acceleration of GaN adoption in the automotive sector beginning in 2026.
Liao Hongchang, Director and General Manager at ATX, commented on the manufacturing partnership: “We began technical exchanges with ROHM in 2017 and are currently exploring possibilities for deeper collaboration. This partnership was made possible due to ATX’s track record and technical expertise in the back-end manufacturing of GaN devices. Looking ahead, we also plan to collaborate on ROHM’s ongoing development of automotive-grade GaN devices.”
Satoshi Fujitani, General Manager of AP Production Headquarters at ROHM Co., Ltd., noted: “ROHM not only offers standalone GaN devices but also provides power solutions that combine them with ICs, leveraging ROHM’s expertise in analog technology. Collaborating with OSATs such as ATX, that possess advanced technical capabilities, allows us to stay ahead in the rapidly growing GaN market while utilizing ROHM’s strengths to bring innovative devices to market.”
The GNP2070TD-Z is applicable for power supplies in servers, communication base stations, and industrial equipment, as well as AC adapters (USB chargers), PV inverters, and Energy Storage Systems (ESS). The device is suitable for power supply systems with 500W to 1kW output power.
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