GaN HEMT targets C-Band radar systems.

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, announces their complete lineup of high efficiency, high gain, and wide bandwidth C-Band radar parts with the market introduction of the new CGHV59070 GaN HEMT for C-Band radar systems.

Designed to operate at 4.5 – 5.9GHz from a 50V rail, the new 70W GaN HEMT is an ideal driver for the highest power C-Band radar device on the market: Wolfspeed’s 350W CGHV59350 GaN HEMT for 5.2 – 5.9 GHz operation, which was released in May of last year. Delivering 90W typical P_OUT at 50V, in addition to 55% drain efficiency at high 14dB power gain, the internally matched CGHV59070 offers a general purpose broadband solution for a variety of RF and microwave applications, and is especially ideal for use in linear and compressed amplifier circuits in marine radar, weather monitoring, air and maritime vessel traffic control, and port security applications.

“First demonstrated at this year’s International Microwave Symposium, the market release of the new 70W CGHV59070 pre-driver completes Wolfspeed’s C-Band radar lineup of pre-drivers, drivers, and output stages, enabling 1kW, all-GaN SSPAs for C-Band radar applications,” said Jim Milligan, RF and microwave director, Wolfspeed. “This latest introduction also further extends our comprehensive radar product portfolio, which helps designers achieve smaller, lighter, and higher power RF amplifiers that are critical for the development of the next-gen military, aerospace, and commercial radar applications.”

Wolfspeed’s CGHV59070 can be supplied in a ceramic/metal flange or pill package, and can be shipped individually, or alongside or installed on a test board.

Compared to conventional silicon (Si) and gallium arsenide (GaAs) devices, Wolfspeed’s GaN-on-SiC RF devices deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are critical for achieving higher performing microwave and RF products needed for emerging systems across a variety of applications. In addition to C-Band radar power amplifiers, Wolfspeed^™ GaN-on-SiC RF devices are also enabling next-generation broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios.