GaN-on-GaN design supports compact, efficient power conversion

Onsemi conductor has introduced a new generation of vertical gallium nitride (vGaN) devices featuring GaN-on-GaN architecture and designed to enhance power density, efficiency, and reliability in high-performance applications.

Unlike lateral GaN structures built on silicon or sapphire substrates, the vertical configuration conducts current through the semiconductor material itself, enabling operation at higher voltages and switching frequencies. This approach supports energy savings and allows for more compact, lightweight system designs in sectors such as artificial intelligence computing, transportation, renewable energy, and industrial automation.

The technology can support voltage ratings of 700 V to 1,200 V and beyond while maintaining stable thermal and switching performance. Systems built with vGaN devices can reduce power losses by up to half compared to conventional solutions, while higher switching frequencies allow smaller passive components. Device dimensions are also reduced compared to traditional lateral GaN components, contributing to improved power density and reduced cooling requirements.

Applications include power conversion for data centers, vehicle inverters, charging systems, renewable energy converters, energy storage, automation equipment, and aerospace or defense platforms. The vGaN architecture combines high-voltage capability, fast switching, and robust design to support next-generation power systems operating in demanding environments. Sampling of 700 V and 1,200 V devices is now available to early access customers.