GaN power IC integrates 140 mΩ half-bridge transistors

The MasterGaN6 from STMicroelectronics is a second-generation half-bridge power system-in-package integrating a BCD driver, GaN power transistor with 140mΩ RDS(on), LDOs and a bootstrap diode in a 9mm x 9mm QFN package. Rated for up to 10A, the device features dedicated fault and standby pins, low minimum on-time and fast propagation delays to support high-frequency topologies such as active-clamp flyback, LLC, inverse buck and PFC circuits. Built-in protections including cross conduction prevention, thermal shutdown and under-voltage lockout help reduce external components and PCB footprint in consumer and industrial power designs such as chargers, adapters, lighting supplies and solar micro-inverters.