The EPC2049 power transistor targets uses in applications that include point-of-load converters, LiDAR, envelope tracking power supplies, Class-D audio, and low-inductance motor drives. Developed by EPC, the EPC2049 has a voltage rating of 40 V and maximum RDS(on) of 5 mΩ with a 175-A pulsed output current.
The chip-scale packaging of The EPC2049 handles thermal conditions far better than the plastic packaged MOSFETs because the heat dissipates directly to the environment with chip-scale devices, whereas the heat from the MOSFET die is held within a plastic package. The GaN device measures a mere 2.5×1.5 mm (3.75 mm2).
“The EPC2049 demonstrates how EPC and gallium nitride transistor technology is increasing the performance and reducing the cost of eGaN devices. The EPC2049 is further evidence that the performance and cost gap of eGaN technology with MOSFET technology continues to widen.” said Alex Lidow, EPC’s co-founder and CEO.
The EPC2049 eGaN FET is priced for 1K units at $2.19 each and is available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
Efficient Power Conversion, 909 N. Sepulveda Blvd, Suite 230, El Segundo, CA 90245, www.epc-co.com